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1.发明授权Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels 有权具有对准（100）NMOS和（110）PMOS FinFET侧壁通道的集成电路公开(公告)号：US08872220B2
公开(公告)日：2014-10-28
申请号：US13855520
申请日：2013-04-02
Applicant: Texas Instruments Incorporated
Inventor： Weize W. Xiong , Cloves R. Cleavelin , Angelo Pinto , Rick L. Wise
IPC: H01L29/66 , H01L27/02 , H01L27/092 , H01L27/11 , G11C11/412 , H01L21/8238
CPC classification number: H01L27/0886 , G11C11/412 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/045 , Y10S257/90 , Y10S438/973 , Y10S438/982
Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Abstract translation: 公开了一种包括多个多栅极FinFET（MuGFET）的集成电路器件。 通过在直接硅键合（DSB）混合取向技术（HOT）衬底上的非晶化和晶体再生长形成用于PMOS和NMOS MuGFET的不同晶体取向的晶片。 PMOS MuGFET翅片由具有（110）晶体取向的翅片侧壁表面限定的通道形成。 NMOS MuGFET翅片由曼哈顿布局具有（100）晶体取向的翅片侧壁表面限定的通道形成，其中不同PMOS和NMOS MuGFET的侧壁通道以0°或90°旋转对准。
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2.发明授权Integrated circuits with aligned (100) NMOS and (110) PMOS finFET sidewall channels 有权具有对准（100）NMOS和（110）PMOS finFET侧壁通道的集成电路公开(公告)号：US09053966B2
公开(公告)日：2015-06-09
申请号：US14499834
申请日：2014-09-29
Applicant: Texas Instruments Incorporated
Inventor： Weize W. Xiong , Cloves R. Cleavelin , Angelo Pinto , Rick L. Wise
IPC: H01L29/66 , H01L27/088 , G11C11/412 , H01L21/8238 , H01L27/02 , H01L27/11 , H01L27/092 , H01L29/04
CPC classification number: H01L27/0886 , G11C11/412 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/045 , Y10S257/90 , Y10S438/973 , Y10S438/982
Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orienations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Abstract translation: 公开了一种包括多个多栅极FinFET（MuGFET）的集成电路器件。 通过在直接硅键合（DSB）混合取向技术（HOT）衬底上的非晶化和晶体再生长形成用于PMOS和NMOS MuGFET的不同晶体取向的晶片。 PMOS MuGFET翅片由具有（110）晶体取向的翅片侧壁表面限定的通道形成。 NMOS MuGFET翅片由曼哈顿布局具有（100）晶体衍射的翅片侧壁表面限定的通道形成，其中不同PMOS和NMOS MuGFET的侧壁通道以0°或90°旋转对准。
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3.发明申请INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET SIDEWALL CHANNELS 审中-公开具有对准（100）NMOS和（110）PMOS FinFET平台通道的集成电路公开(公告)号：US20150014789A1
公开(公告)日：2015-01-15
申请号：US14499834
申请日：2014-09-29
Applicant: Texas Instruments Incorporated
Inventor： Weize W. Xiong , Cloves R. Cleavelin , Angelo Pinto , Rick L. Wise
IPC: H01L27/088 , H01L27/11 , G11C11/412 , H01L29/04
CPC classification number: H01L27/0886 , G11C11/412 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/045 , Y10S257/90 , Y10S438/973 , Y10S438/982
Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orienations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Abstract translation: 公开了一种包括多个多栅极FinFET（MuGFET）的集成电路器件。 通过在直接硅键合（DSB）混合取向技术（HOT）衬底上的非晶化和晶体再生长形成用于PMOS和NMOS MuGFET的不同晶体取向的晶片。 PMOS MuGFET翅片由具有（110）晶体取向的翅片侧壁表面限定的通道形成。 NMOS MuGFET翅片由曼哈顿布局具有（100）晶体衍射的翅片侧壁表面限定的通道形成，其中不同PMOS和NMOS MuGFET的侧壁通道以0°或90°旋转对准。
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4.发明申请INTEGRATED CIRCUITS WITH ALIGNED (100) NMOS AND (110) PMOS FINFET SIDEWALL CHANNELS 有权具有对准（100）NMOS和（110）PMOS FinFET平台通道的集成电路公开(公告)号：US20140035057A1
公开(公告)日：2014-02-06
申请号：US13855520
申请日：2013-04-02
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Weize W. Xiong , Cloves R. Cleavelin , Angelo Pinto , Rick L. Wise
IPC: H01L27/11 , H01L27/092
CPC classification number: H01L27/0886 , G11C11/412 , H01L21/823807 , H01L21/823821 , H01L27/0207 , H01L27/092 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/045 , Y10S257/90 , Y10S438/973 , Y10S438/982
Abstract: An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Abstract translation: 公开了一种包括多个多栅极FinFET（MuGFET）的集成电路器件。 通过在直接硅键合（DSB）混合取向技术（HOT）衬底上的非晶化和晶体再生长形成用于PMOS和NMOS MuGFET的不同晶体取向的晶片。 PMOS MuGFET翅片由具有（110）晶体取向的翅片侧壁表面限定的通道形成。 NMOS MuGFET翅片由曼哈顿布局具有（100）晶体取向的翅片侧壁表面限定的通道形成，其中不同PMOS和NMOS MuGFET的侧壁通道以0°或90°旋转对准。
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