公开(公告)号：US09755139B2

公开(公告)日：2017-09-05

申请号：US14738847

申请日：2015-06-13

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/22 ,  H01L41/332 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US10319899B2

公开(公告)日：2019-06-11

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/187 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20170338401A1

公开(公告)日：2017-11-23

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20150380637A1

公开(公告)日：2015-12-31

申请号：US14738847

申请日：2015-06-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

Abstract translation: 包含压电薄膜元件的微电子器件通过用氧等离子体氧化压电层的顶表面，随后在氧化的顶表面上形成含有光致抗蚀剂的蚀刻掩模来形成。 蚀刻掩模用烤箱烘烤，然后进行UV烘烤。 使用三步法蚀刻压电层：第一步骤包括湿蚀刻约5％NH 4 F水溶液，约1.2％HF和约18％HCl，保持HCl与HF的比例约为 15.0，其去除了大部分的压电层。 第二步包括搅拌漂洗。 第三步包括NH4F，HF和HCl水溶液中的短蚀刻。