公开(公告)号：US09304283B2

公开(公告)日：2016-04-05

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  H01L21/3213 ,  H04N5/232 ,  C23F1/00

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US10319899B2

公开(公告)日：2019-06-11

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/187 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20150338604A1

公开(公告)日：2015-11-26

申请号：US14533967

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Joel Soman ,  Neng Jiang ,  Scott Summerfelt ,  Thomas Warren Lassiter ,  Nayeemuddin Mohammed ,  Mary Alyssa Drummond Roby

IPC: G02B7/09 ,  C23F1/00 ,  H04N5/232

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: An apparatus includes first and second electrodes separated by an insulative material (such as a piezoelectric material). The apparatus also includes a protective layer over the first and second electrodes. The protective layer has a first opening that exposes a portion of the first electrode and a second opening that exposes a portion of the second electrode. The apparatus further includes a first electrical contact at least partially within the first opening and electrically coupled to the first electrode. In addition, the apparatus includes a second electrical contact at least partially within the second opening and electrically coupled to the second electrode. Each of the first and second electrical contacts includes a stack of metal layers. The stack of metal layers includes a titanium nitride layer, a titanium layer over the titanium nitride layer, and an aluminum copper layer over the titanium nitride layer and the titanium layer.

Abstract translation: 一种装置包括由绝缘材料（例如压电材料）隔开的第一和第二电极。 该装置还包括在第一和第二电极上的保护层。 保护层具有暴露第一电极的一部分的第一开口和暴露第二电极的一部分的第二开口。 该装置还包括至少部分地在第一开口内并且电耦合到第一电极的第一电接触。 此外，该装置包括至少部分地在第二开口内并电耦合到第二电极的第二电接触。 第一和第二电触点中的每一个包括一叠金属层。 金属层的叠层包括氮化钛层，氮化钛层上的钛层和氮化钛层和钛层上的铝铜层。

公开(公告)号：US09939710B2

公开(公告)日：2018-04-10

申请号：US15191569

申请日：2016-06-24

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02F1/29 ,  H01L21/3213 ,  G02B7/09 ,  H04N5/232 ,  C23F1/00 ,  C23F4/00 ,  H04N5/225 ,  G03B13/36 ,  H01L41/31 ,  H01L41/332

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

公开(公告)号：US20160313627A1

公开(公告)日：2016-10-27

申请号：US15191569

申请日：2016-06-24

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02F1/29 ,  G03B13/36 ,  H01L41/332 ,  H04N5/225 ,  C23F4/00 ,  H01L41/31

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

公开(公告)号：US09755139B2

公开(公告)日：2017-09-05

申请号：US14738847

申请日：2015-06-13

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/22 ,  H01L41/332 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US20150340245A1

公开(公告)日：2015-11-26

申请号：US14533999

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: H01L21/3213

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

Abstract translation: 一种方法包括将具有氮化钛层的器件放置在腔室中。 该装置还具有包括光致抗蚀剂材料和铝铜硬掩模的掩模。 该方法还包括使用腔室对掩模进行灰化处理。 该方法还包括在灰化处理之后，使用该腔室进行蚀刻工艺以蚀刻穿过氮化钛层的一部分。 执行蚀刻工艺包括在至少约200℃的温度下将含有四氟甲烷（CF 4）和氧气（O 2）的气体混合物流入室中。

公开(公告)号：US20170338401A1

公开(公告)日：2017-11-23

申请号：US15669309

申请日：2017-08-04

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314 ,  H01L41/187

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

公开(公告)号：US09405089B2

公开(公告)日：2016-08-02

申请号：US14533999

申请日：2014-11-05

Applicant: Texas Instruments Incorporated

Inventor： Neng Jiang ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  Nayeemuddin Mohammed ,  YungShan Chang

IPC: G02B7/09 ,  H01L21/3213 ,  H04N5/232 ,  C23F1/00 ,  C23F4/00

CPC classification number: G02F1/29 ,  C23F1/00 ,  C23F4/00 ,  G02B7/09 ,  G02F2001/294 ,  G03B13/36 ,  H01L21/32136 ,  H01L21/32139 ,  H01L41/31 ,  H01L41/332 ,  H04N5/2254 ,  H04N5/232 ,  H04N5/23229

Abstract: A method includes placing a device having a titanium nitride layer into a chamber. The device also has a mask that includes a photoresist material and an aluminum copper hardmask. The method also includes performing an ashing process on the mask using the chamber. The method further includes, after the ashing process, performing an etching process using the chamber to etch through portions of the titanium nitride layer. Performing the etching process includes flowing a gas mixture containing tetrafluoromethane (CF4) and oxygen gas (O2) into the chamber at a temperature of at least about 200° C.

Abstract translation: 一种方法包括将具有氮化钛层的器件放置在腔室中。 该装置还具有包括光致抗蚀剂材料和铝铜硬掩模的掩模。 该方法还包括使用腔室对掩模进行灰化处理。 该方法还包括在灰化处理之后，使用该腔室进行蚀刻工艺以蚀刻穿过氮化钛层的一部分。 执行蚀刻工艺包括在至少约200℃的温度下将含有四氟甲烷（CF 4）和氧气（O 2）的气体混合物流入室中。

公开(公告)号：US20150380637A1

公开(公告)日：2015-12-31

申请号：US14738847

申请日：2015-06-13

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Neng Jiang ,  Xin Li ,  Joel Soman ,  Thomas Warren Lassiter ,  Mary Alyssa Drummond Roby ,  YungShan Chang

IPC: H01L41/332 ,  H01L41/253 ,  H01L41/25 ,  H01L41/314

CPC classification number: H01L41/332 ,  H01L41/1876 ,  H01L41/25 ,  H01L41/253 ,  H01L41/314

Abstract: A microelectronic device containing a piezoelectric thin film element is formed by oxidizing a top surface of a piezoelectric layer with an oxygen plasma, and subsequently forming an etch mask containing photoresist on the oxidized top surface. The etch mask is conditioned with an oven bake followed by a UV bake. The piezoelectric layer is etched using a three step process: a first step includes a wet etch of an aqueous solution of about 5% NH4F, about 1.2% HF, and about 18% HCl, maintaining a ratio of the HCl to the HF of about 15.0, which removes a majority of the piezoelectric layer. A second step includes an agitated rinse. A third step includes a short etch in the aqueous solution of NH4F, HF, and HCl.

Abstract translation: 包含压电薄膜元件的微电子器件通过用氧等离子体氧化压电层的顶表面，随后在氧化的顶表面上形成含有光致抗蚀剂的蚀刻掩模来形成。 蚀刻掩模用烤箱烘烤，然后进行UV烘烤。 使用三步法蚀刻压电层：第一步骤包括湿蚀刻约5％NH 4 F水溶液，约1.2％HF和约18％HCl，保持HCl与HF的比例约为 15.0，其去除了大部分的压电层。 第二步包括搅拌漂洗。 第三步包括NH4F，HF和HCl水溶液中的短蚀刻。