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公开(公告)号：US11721510B2
公开(公告)日：2023-08-08
申请号：US17490157
申请日：2021-09-30
IPC分类号： H01H85/048 , H01H9/04 , H01H85/02 , H01H85/00 , H02H9/04
CPC分类号： H01H85/048 , H01H85/0052 , H01H85/0241 , H02H9/042
摘要： An electronic device includes an input, an output, a metal fuse, a resistor, a heat control transistor, and a heat controller. The metal fuse is coupled between the input and the output. The resistor is coupled between the metal fuse and the heat control transistor. The heat control transistor is coupled between the resistor and a reference terminal of the electronic device, and the heat controller is configured to control a heater current of the heat control transistor.
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公开(公告)号：US10734313B2
公开(公告)日：2020-08-04
申请号：US15951021
申请日：2018-04-11
发明人： Jeffrey Morroni , Rajeev Dinkar Joshi , Sreenivasan K. Koduri , Sujan Kundapur Manohar , Yogesh K. Ramadass , Anindya Poddar
IPC分类号： H01L23/495 , H01L25/065 , H01L23/31 , H01L23/29 , H01L23/498 , H01L25/16 , H01L23/50
摘要： A semiconductor package includes a leadframe and a semiconductor die attached to the leadframe by way of solder posts. In a stacked arrangement, the package also includes a passive component disposed between the leadframe and the semiconductor die and electrically connected to the semiconductor die through the leadframe.
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公开(公告)号：US10523114B1
公开(公告)日：2019-12-31
申请号：US16205200
申请日：2018-11-29
摘要： Described herein is a technology for implementing a decoupling circuit (104) to increase reliability of a DC-DC power converter (100). To absorb an overshoot transient voltage, the decoupling circuit includes a first capacitor (214) and a second capacitor (216) that charge energy during a short burst of upward electrical energy. During an undershoot transient voltage, however, the first capacitor and second capacitor discharge energy to a transistor (108). In certain embodiment, such as the transistor that requires higher voltage switching, the decoupling circuit is connected in series with another decoupling circuit.
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公开(公告)号：US11996254B2
公开(公告)日：2024-05-28
申请号：US18346298
申请日：2023-07-03
IPC分类号： H01H85/048 , H01H85/00 , H01H85/02 , H02H9/04
CPC分类号： H01H85/048 , H01H85/0052 , H01H85/0241 , H02H9/042
摘要： A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.
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公开(公告)号：US20230343539A1
公开(公告)日：2023-10-26
申请号：US18346298
申请日：2023-07-03
IPC分类号： H01H85/02 , H01H85/00 , H02H9/04 , H01H85/048
CPC分类号： H01H85/048 , H01H85/0052 , H01H85/0241 , H02H9/042
摘要： A method comprises: forming a first metallization layer on a semiconductor die, the first metallization layer including a metal fuse; and forming a second metallization layer on the first metallization layer, in which the second metallization layer includes a thermal conductor spaced from the metal fuse, and the first metallization layer is between the second metallization layer and the semiconductor die.
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公开(公告)号：US20230099861A1
公开(公告)日：2023-03-30
申请号：US17490157
申请日：2021-09-30
IPC分类号： H01H85/048 , H01H85/00 , H01H85/02 , H02H9/04
摘要： An electronic device includes an input, an output, a metal fuse, a resistor, a heat control transistor, and a heat controller. The metal fuse is coupled between the input and the output. The resistor is coupled between the metal fuse and the heat control transistor. The heat control transistor is coupled between the resistor and a reference terminal of the electronic device, and the heat controller is configured to control a heater current of the heat control transistor.
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公开(公告)号：US11430722B2
公开(公告)日：2022-08-30
申请号：US15951003
申请日：2018-04-11
发明人： Jeffrey Morroni , Rajeev Dinkar Joshi , Sreenivasan K. Koduri , Sujan Kundapur Manohar , Yogesh K. Ramadass , Anindya Poddar
IPC分类号： H01L23/00 , H01L23/495 , H01L23/498 , H01L21/48 , H01L23/50
摘要： A semiconductor package includes a leadframe, a semiconductor die attached to the leadframe, and a passive component electrically connected to the semiconductor die through the leadframe. The leadframe includes a cavity in a side of the leadframe opposite the semiconductor die, and at least a portion of the passive component resides within the cavity in a stacked arrangement.
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