公开(公告)号：US09818607B2

公开(公告)日：2017-11-14

申请号：US14745752

申请日：2015-06-22

申请人： The Hong Kong University of Science and Technology

发明人： Hoi Sing Kwok ,  Man Wong ,  Rongsheng Chen ,  Meng Zhang ,  Wei Zhou

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/786 ,  H01L29/16 ,  H01L29/32

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L29/04 ,  H01L29/16 ,  H01L29/32 ,  H01L29/786

摘要： Techniques are provided for forming thin film transistors having a polycrystalline silicon active layer formed by metal-induced crystallization (MIC) of amorphous silicon in an oxidizing atmosphere. In an aspect, a transistor device, is provided that includes a source region and a drain region formed on a substrate, and an active channel region formed on the substrate and electrically connecting the source region and the drain region. The active channel region is formed with a polycrystalline silicon layer having resulted from annealing an amorphous silicon layer formed on the substrate and having a metal layer formed thereon, wherein the annealing of the amorphous silicon layer was at least partially performed in an oxidizing ambience, thereby resulting in crystallization of the amorphous silicon layer to form the polycrystalline silicon layer.

公开(公告)号：US20160020095A1

公开(公告)日：2016-01-21

申请号：US14745752

申请日：2015-06-22

申请人： The Hong Kong University of Science and Technology

发明人： Hoi Sing Kwok ,  Man Wong ,  Rongsheng Chen ,  Meng Zhang ,  Wei Zhou

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/32 ,  H01L29/786 ,  H01L29/16

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L29/04 ,  H01L29/16 ,  H01L29/32 ,  H01L29/786

摘要： Techniques are provided for forming thin film transistors having a polycrystalline silicon active layer formed by metal-induced crystallization (MIC) of amorphous silicon in an oxidizing atmosphere. In an aspect, a transistor device, is provided that includes a source region and a drain region formed on a substrate, and an active channel region formed on the substrate and electrically connecting the source region and the drain region. The active channel region is formed with a polycrystalline silicon layer having resulted from annealing an amorphous silicon layer formed on the substrate and having a metal layer formed thereon, wherein the annealing of the amorphous silicon layer was at least partially performed in an oxidizing ambience, thereby resulting in crystallization of the amorphous silicon layer to form the polycrystalline silicon layer.

摘要翻译： 提供了用于形成薄膜晶体管的技术，该薄膜晶体管具有通过在氧化气氛中的非晶硅的金属诱导结晶（MIC）形成的多晶硅有源层。 在一方面，提供了一种晶体管器件，其包括形成在衬底上的源极区域和漏极区域以及形成在衬底上并且电连接源极区域和漏极区域的有源沟道区域。 有源沟道区形成有由在基板上形成的非晶硅层退火而形成的多晶硅层，其上形成有金属层，其中非晶硅层的退火至少部分地在氧化气氛中进行，由此 导致非晶硅层的结晶以形成多晶硅层。