公开(公告)号：US20180240821A1

公开(公告)日：2018-08-23

申请号：US15899995

申请日：2018-02-20

申请人： The Hong Kong University of Science and Technology

发明人： Lei Lu ,  Wei Zhou ,  Man Wong ,  Hoi Sing Kwok

IPC分类号： H01L27/12

CPC分类号： H01L27/1251 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  H01L21/266 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696

摘要： This disclosure relates generally to the three-dimensional (3D) integrated thin-film transistors (TFTs) with silicon and metal-oxide (MO) semiconductors as the active layers. In one or more embodiments, an apparatus is provided that comprises a first transistor comprising a silicon active layer, and a second transistor comprising a metal oxide active layer. The second transistor is vertically stacked on the first transistor, and the first transistor and the second transistor share a gate electrode formed between the silicon active layer and the metal oxide active layer. With these embodiments, the gate electrode corresponds to a top gate of the first transistor and a bottom gate of the second transistor.

公开(公告)号：US20160020095A1

公开(公告)日：2016-01-21

申请号：US14745752

申请日：2015-06-22

申请人： The Hong Kong University of Science and Technology

发明人： Hoi Sing Kwok ,  Man Wong ,  Rongsheng Chen ,  Meng Zhang ,  Wei Zhou

IPC分类号： H01L21/02 ,  H01L29/04 ,  H01L29/32 ,  H01L29/786 ,  H01L29/16

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L29/04 ,  H01L29/16 ,  H01L29/32 ,  H01L29/786

摘要： Techniques are provided for forming thin film transistors having a polycrystalline silicon active layer formed by metal-induced crystallization (MIC) of amorphous silicon in an oxidizing atmosphere. In an aspect, a transistor device, is provided that includes a source region and a drain region formed on a substrate, and an active channel region formed on the substrate and electrically connecting the source region and the drain region. The active channel region is formed with a polycrystalline silicon layer having resulted from annealing an amorphous silicon layer formed on the substrate and having a metal layer formed thereon, wherein the annealing of the amorphous silicon layer was at least partially performed in an oxidizing ambience, thereby resulting in crystallization of the amorphous silicon layer to form the polycrystalline silicon layer.

摘要翻译： 提供了用于形成薄膜晶体管的技术，该薄膜晶体管具有通过在氧化气氛中的非晶硅的金属诱导结晶（MIC）形成的多晶硅有源层。 在一方面，提供了一种晶体管器件，其包括形成在衬底上的源极区域和漏极区域以及形成在衬底上并且电连接源极区域和漏极区域的有源沟道区域。 有源沟道区形成有由在基板上形成的非晶硅层退火而形成的多晶硅层，其上形成有金属层，其中非晶硅层的退火至少部分地在氧化气氛中进行，由此 导致非晶硅层的结晶以形成多晶硅层。

公开(公告)号：US09818607B2

公开(公告)日：2017-11-14

申请号：US14745752

申请日：2015-06-22

申请人： The Hong Kong University of Science and Technology

发明人： Hoi Sing Kwok ,  Man Wong ,  Rongsheng Chen ,  Meng Zhang ,  Wei Zhou

IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L29/786 ,  H01L29/16 ,  H01L29/32

CPC分类号： H01L21/02672 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L29/04 ,  H01L29/16 ,  H01L29/32 ,  H01L29/786

摘要： Techniques are provided for forming thin film transistors having a polycrystalline silicon active layer formed by metal-induced crystallization (MIC) of amorphous silicon in an oxidizing atmosphere. In an aspect, a transistor device, is provided that includes a source region and a drain region formed on a substrate, and an active channel region formed on the substrate and electrically connecting the source region and the drain region. The active channel region is formed with a polycrystalline silicon layer having resulted from annealing an amorphous silicon layer formed on the substrate and having a metal layer formed thereon, wherein the annealing of the amorphous silicon layer was at least partially performed in an oxidizing ambience, thereby resulting in crystallization of the amorphous silicon layer to form the polycrystalline silicon layer.

公开(公告)号：US09214568B2

公开(公告)日：2015-12-15

申请号：US14104762

申请日：2013-12-12

申请人： The Hong Kong University of Science and Technology

发明人： Hoi Sing Kwok ,  Meng Zhang ,  Shuming Chen ,  Wei Zhou ,  Man Wong

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78696 ,  H01L29/6675 ,  H01L29/78675

摘要： A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary.

摘要翻译： 薄膜晶体管包括：源极区; 漏区; 以及连接到源区和漏区的多晶薄膜有源沟道区，所述有源沟道区包含晶粒并掺杂有包括多个掺杂区的二维图案，所述多个掺杂区各自包括至少部分 的多个晶粒和至少一个晶界。