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公开(公告)号:US20220127720A1
公开(公告)日:2022-04-28
申请号:US17310555
申请日:2020-02-11
发明人: Maryam Alsadat Hejazi , David John Garrett , Alastair Douglas Stacey , Nicholas Vincent Apollo , Kumaravelu Ganesan , Matias Ismael Maturana , Steven Prawer , Wei Tong , Melanie Elisabeth Maria Stamp , Michael Ibbotson
IPC分类号: C23C16/27 , H01B1/04 , C23C16/02 , C23C16/04 , C23C16/54 , C30B25/04 , C30B25/18 , C30B29/04 , D06M11/74 , D06M23/06 , A61B5/1468 , A61N1/05 , C01B32/05
摘要: Disclosed is a method of forming a conductive diamond layer on a surface of a carbon fibre substrate that is used as a component of an electrode for neural stimulation and/or electrochemical sensing. The method comprises functionalising at least a portion of the surface with a functionalising agent to facilitate coating the surface with the conductive diamond layer. The method also comprises providing a diamond precursor and depositing the diamond precursor over the functionalising agent to form the conductive diamond layer. The disclosure also relates to an electrode that is used as a component of an electrode for neural stimulation and/or electrochemical sensing.
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公开(公告)号:US20240241166A1
公开(公告)日:2024-07-18
申请号:US18289520
申请日:2022-05-04
摘要: This disclosure relates to an electrical field sensor. The sensor comprises a diamond substrate with a conducting surface providing positive charge carriers and multiple defects disposed in the diamond substrate. The sensor further comprises an optical apparatus to initialise and readout the multiple defect vacancies to determine the electrical field based on a detected fluorescence of the multiple defects. The multiple defects are located at a depth below the surface to enable the positive charge carriers to reach and positively charge the multiple defect vacancies under an influence of an external negative electric field to thereby alter the fluorescence of at least some of the multiple defects. Since the fluorescence can be measured optically, no electrical connections or amplifiers are required on the surface, which means significantly higher densities of sensors can be implemented.
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