摘要:
A low dropout (LDO) voltage regulator with unconditional frequency compensation is presented. The low dropout voltage regulator is implemented using a two-stage operational amplifier. The first stage amplifier has two input transistors, each of which is connected to a diode-connected transistor. A transistor is connected in parallel to the diode-connected transistors to increase the gain of the first stage amplifier. The LDO voltage regulator has a compensation capacitance input between the first stage amplifier and the second stage amplifier and a voltage on the compensation capacitance input adjusts the current through the diode-connected transistors, as well as the gain of the first stage amplifier. The second stage amplifier receives output from the first stage amplifier, and a compensation capacitor is connected between the compensation capacitance input of the operational amplifier and the output node of the LDO voltage regulator.
摘要:
A charge pump circuit is provided that has a controllable ramp rate. The charge pump circuit may receive a control signal from a control circuit. The control signal may be asserted by the control circuit to turn on the charge pump circuit. When the charge pump circuit is turned on, the charge pump circuit produces an output voltage. The output voltage ramps up from an initial value to a desired target value. During the ramp up process, a ramp rate regulation circuit monitors the output voltage and ensures that the ramp rate does not exceed a desired maximum value. A capacitor may be charged at a desired ramp rate to use as a time-varying reference voltage. A feedback circuit may be used to maintain the output voltage at the desired target value once the ramp-up process is complete.
摘要:
Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors.
摘要:
Voltage regulator circuitry is provided. The voltage regulator circuitry may contain a drive transistor that is controlled by the output of an operational amplifier. The drive transistor may supply a regulated voltage to a load. The operational amplifier may compare a reference voltage and a feedback signal at its inputs. The operational amplifier may include first and second stages. An adjustable resistor may be provided between the first and second stages. Control circuitry may control the resistance of the adjustable resistor based on the amount of current flowing through the load to ensure stable operation of the voltage regulator circuitry. Overshoot and undershoot detection and compensation circuitry may compensate for overshoot and undershoot in the regulated voltage. Voltage ramp control circuitry may be used to control the ramp rate of the regulated voltage.
摘要:
Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors.
摘要:
Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors.
摘要:
Power regulator circuitry for programmable memory elements on programmable logic device integrated circuits is provided. The programmable memory elements may each include a storage element formed from cross-coupled inverters and an address transistor. Address drivers may be used to supply address signals to the address transistors. The power regulator circuitry may include an address power supply circuit that produces a time-varying address power supply voltage to the address drivers and storage element power supply circuits that provide time-varying storage element power supply voltages to the cross-coupled inverters in the storage elements. Unity gain buffers may be used to distribute a reference voltage from a bandgap voltage reference to the power supply circuits. The power supply circuits may use voltage dividers and p-channel metal-oxide-semiconductor control transistors.
摘要:
Voltage regulator circuitry is provided. The voltage regulator circuitry may contain a drive transistor that is controlled by the output of an operational amplifier. The drive transistor may supply a regulated voltage to a load. The operational amplifier may compare a reference voltage and a feedback signal at its inputs. The operational amplifier may include first and second stages. An adjustable resistor may be provided between the first and second stages. Control circuitry may control the resistance of the adjustable resistor based on the amount of current flowing through the load to ensure stable operation of the voltage regulator circuitry. Overshoot and undershoot detection and compensation circuitry may compensate for overshoot and undershoot in the regulated voltage. Voltage ramp control circuitry may be used to control the ramp rate of the regulated voltage.
摘要:
Voltage regulator circuitry is provided. The voltage regulator circuitry may contain a drive transistor that is controlled by the output of an operational amplifier. The drive transistor may supply a regulated voltage to a load. The operational amplifier may compare a reference voltage and a feedback signal at its inputs. The operational amplifier may include first and second stages. An adjustable resistor may be provided between the first and second stages. Control circuitry may control the resistance of the adjustable resistor based on the amount of current flowing through the load to ensure stable operation of the voltage regulator circuitry. Overshoot and undershoot detection and compensation circuitry may compensate for overshoot and undershoot in the regulated voltage. Voltage ramp control circuitry may be used to control the ramp rate of the regulated voltage.
摘要:
A startup circuit to ensure a bandgap reference circuit reliably starts up or recovers from a noise disturbance is provided. The startup circuit incorporates a pull down resistor to detect the bandgap reference circuit being in a disabled state. The startup circuit creates a positive feedback loop to force the bandgap reference circuit out of a disabled state. Consequently, whenever the power supply for the bandgap reference circuit sags or if bandgap output collapses, the output of the bandgap circuit reliably ramps back up to the expected level.