公开(公告)号：US09196641B2

公开(公告)日：2015-11-24

申请号：US13633816

申请日：2012-10-02

Applicant: Thin Film Electronics ASA

Inventor： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

IPC: H01L27/00 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1292 ,  H01L29/66757

Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或上方，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

公开(公告)号：US09640390B1

公开(公告)日：2017-05-02

申请号：US13889243

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Fabio Zurcher ,  Arvind Kamath ,  Joerg Rockenberger

IPC: H01L21/02 ,  C08G77/56 ,  H01L27/12 ,  H01L29/66 ,  C09D183/16 ,  H01L21/208

CPC classification number: H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.