公开(公告)号：US09045653B2

公开(公告)日：2015-06-02

申请号：US13975231

申请日：2013-08-23

Applicant: Thin Film Electronics ASA

Inventor： Erik Scher ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori ,  Wenzhuo Guo ,  Dmitry Karshtedt ,  Vladimir K. Dioumaev

IPC: C09D11/101 ,  C09D5/24 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01B3/02 ,  H01L27/12

CPC classification number: C09D5/24 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01B3/02 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28008 ,  H01L27/1292 ,  H01L29/6675 ,  H01L29/78696 ,  Y10T428/24802

Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

Abstract translation: 实施例涉及从含有材​​料前体的油墨印刷特征。 在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。 在另一个实施例中，该材料包括电介质。 这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。 组合物和/或方法通过增加油墨中组分的粘度和质量负载来改善对钉扎的控制。 因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

公开(公告)号：US09196641B2

公开(公告)日：2015-11-24

申请号：US13633816

申请日：2012-10-02

Applicant: Thin Film Electronics ASA

Inventor： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

IPC: H01L27/00 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L27/1292 ,  H01L29/66757

Abstract: A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.

Abstract translation: 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或上方，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。

公开(公告)号：US09400953B1

公开(公告)日：2016-07-26

申请号：US14285469

申请日：2014-05-22

Applicant: Thin Film Electronics ASA

Inventor： Criswell Choi ,  Joerg Rockenberger ,  Christopher Gudeman ,  J. Devin Mackenzie ,  Partick Smith ,  James Montague Cleeves

IPC: G03F7/00 ,  G01S13/74 ,  G06K19/077 ,  G08B13/24

CPC classification number: G06K19/07773 ,  G03F7/0043 ,  G03F7/2055 ,  G06K19/07749 ,  G08B13/2402 ,  G08B13/2417 ,  G08B13/244 ,  G08B13/2468

Abstract: Methods, algorithms, processes, circuits, and/or structures for laser patterning suitable for customized RFID designs are disclosed. In one embodiment, a method of laser patterning of an identification device can include the steps of: (i) depositing a patternable resist formulation on a substrate having configurable elements and/or materials thereon; (ii) irradiating the resist formulation with a laser tool sufficiently to change the solubility characteristics of the resist in a developer; and (iii) developing exposed areas of the resist using the developer. Embodiments of the present invention can advantageously provide a relatively low cost and high throughput approach for customized RFID devices.

Abstract translation: 公开了适用于定制RFID设计的用于激光图案的方法，算法，过程，电路和/或结构。 在一个实施例中，识别装置的激光图案化的方法可以包括以下步骤：（i）在其上具有可配置元件和/或材料的衬底上沉积可图案化的抗蚀剂制剂; （ii）用激光工具照射抗蚀剂制剂，足以改变显影剂中抗蚀剂的溶解度特性; 和（iii）使用显影剂显影抗蚀剂的曝光区域。 本发明的实施例可以有利地为定制的RFID设备提供相对低成本和高吞吐量的方法。

公开(公告)号：US09336925B1

公开(公告)日：2016-05-10

申请号：US13889149

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C08G77/04 ,  H01B3/02 ,  H01L21/02 ,  C07F7/02 ,  C07F7/08 ,  C08G77/06

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

Abstract translation: 在一个方面，本发明提供基本上不含碳和其它不期望的污染物的未掺杂和掺杂的硅氧烷，锗氧烷和硅胶。 在第二方面，本发明提供了制备这种未掺杂和掺杂的硅氧烷，锗烷和硅胶木糖的方法。 在另一方面，本发明提供了包含未掺杂和/或掺杂的硅氧烷，锗氧烷和硅藻木素和溶剂的组合物，以及用于从这种组合物形成未掺杂和掺杂的介电膜的方法。 所描述的未掺杂和/或掺杂的硅氧烷组合物有利地提供未掺杂和/或掺杂的电介质前体油墨，其可用于形成基本上不含碳的未掺杂和/或掺杂的介电膜。

公开(公告)号：US09704713B1

公开(公告)日：2017-07-11

申请号：US15091798

申请日：2016-04-06

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C09D1/00 ,  H01L21/225 ,  H01B3/02 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

公开(公告)号：US09640390B1

公开(公告)日：2017-05-02

申请号：US13889243

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Fabio Zurcher ,  Arvind Kamath ,  Joerg Rockenberger

IPC: H01L21/02 ,  C08G77/56 ,  H01L27/12 ,  H01L29/66 ,  C09D183/16 ,  H01L21/208

CPC classification number: H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.