公开(公告)号：US09045653B2

公开(公告)日：2015-06-02

申请号：US13975231

申请日：2013-08-23

Applicant: Thin Film Electronics ASA

Inventor： Erik Scher ,  Steven Molesa ,  Joerg Rockenberger ,  Arvind Kamath ,  Ikuo Mori ,  Wenzhuo Guo ,  Dmitry Karshtedt ,  Vladimir K. Dioumaev

IPC: C09D11/101 ,  C09D5/24 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/786 ,  H01B3/02 ,  H01L27/12

CPC classification number: C09D5/24 ,  C09D11/101 ,  C09D11/322 ,  C09D11/36 ,  C09D11/54 ,  H01B3/02 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/28008 ,  H01L27/1292 ,  H01L29/6675 ,  H01L29/78696 ,  Y10T428/24802

Abstract: Embodiments relate to printing features from an ink containing a material precursor. In some embodiments, the material includes an electrically active material, such as a semiconductor, a metal, or a combination thereof. In another embodiment, the material includes a dielectric. The embodiments provide improved printing process conditions that allow for more precise control of the shape, profile and dimensions of a printed line or other feature. The composition(s) and/or method(s) improve control of pinning by increasing the viscosity and mass loading of components in the ink. An exemplary method thus includes printing an ink comprising a material precursor and a solvent in a pattern on the substrate; precipitating the precursor in the pattern to form a pinning line; substantially evaporating the solvent to form a feature of the material precursor defined by the pinning line; and converting the material precursor to the patterned material.

Abstract translation: 实施例涉及从含有材​​料前体的油墨印刷特征。 在一些实施例中，材料包括电活性材料，例如半导体，金属或其组合。 在另一个实施例中，该材料包括电介质。 这些实施例提供改进的印刷工艺条件，其允许更精确地控制印刷线或其它特征的形状，轮廓和尺寸。 组合物和/或方法通过增加油墨中组分的粘度和质量负载来改善对钉扎的控制。 因此，示例性方法包括在基板上以图案印刷包含材料前体和溶剂的油墨; 以图案沉淀前体以形成钉扎线; 基本上蒸发溶剂以形成由钉扎线限定的材料前体的特征; 并将材料前体转化成图案化材料。

公开(公告)号：US09359513B1

公开(公告)日：2016-06-07

申请号：US14305559

申请日：2014-06-16

Applicant: Thin Film Electronics ASA

Inventor： Mao Takashima ,  Inna Tregub ,  Wenzhuo Guo ,  Brian Bedwell ,  Klaus Kunze ,  Aditi Chandra ,  Arvind Kamath ,  Jun Li ,  Li Li ,  Junfeng Mei

IPC: C09D11/107

CPC classification number: C09D11/107 ,  C09D11/52 ,  H01L51/0005

Abstract: Printable dopant formulations, methods of making such dopant formulations, and methods of using such dopant formulations are disclosed. The dopant formulations provide a printable dopant ink with a viscosity sufficient to prevent ink spreading when deposited in a pattern on a substrate. Furthermore, an ion exchange purification process provides the dopant formulation with a reduced metal ion concentration, and thus a relatively high purity level. Consequently, the dopant residue remaining on the substrate after curing and/or dopant activation process is relatively uniform, and therefore can be easily removed.

Abstract translation: 公开了可印刷掺杂剂配方，制备这种掺杂剂配方的方法，以及使用这种掺杂剂配方的方法。 掺杂剂配方提供可印刷的掺杂剂油墨，其具有足够的粘度，以防止当以基板上的图案沉积时的油墨扩散。 此外，离子交换纯化方法为掺杂剂配方提供降低的金属离子浓度，从而提供相当高的纯度水平。 因此，在固化和/或掺杂剂活化过程之后残留在基板上的掺杂剂残留物相对均匀，因此可以容易地除去。

公开(公告)号：US09336925B1

公开(公告)日：2016-05-10

申请号：US13889149

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C08G77/04 ,  H01B3/02 ,  H01L21/02 ,  C07F7/02 ,  C07F7/08 ,  C08G77/06

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

Abstract translation: 在一个方面，本发明提供基本上不含碳和其它不期望的污染物的未掺杂和掺杂的硅氧烷，锗氧烷和硅胶。 在第二方面，本发明提供了制备这种未掺杂和掺杂的硅氧烷，锗烷和硅胶木糖的方法。 在另一方面，本发明提供了包含未掺杂和/或掺杂的硅氧烷，锗氧烷和硅藻木素和溶剂的组合物，以及用于从这种组合物形成未掺杂和掺杂的介电膜的方法。 所描述的未掺杂和/或掺杂的硅氧烷组合物有利地提供未掺杂和/或掺杂的电介质前体油墨，其可用于形成基本上不含碳的未掺杂和/或掺杂的介电膜。

公开(公告)号：US09704713B1

公开(公告)日：2017-07-11

申请号：US15091798

申请日：2016-04-06

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Brent Ridley ,  Joerg Rockenberger

IPC: C09D1/00 ,  H01L21/225 ,  H01B3/02 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L21/2254 ,  C07F7/025 ,  C07F7/0834 ,  C08G77/04 ,  C08G77/06 ,  C09D1/00 ,  H01B3/02 ,  H01B3/025 ,  H01L21/02112 ,  H01L21/02126 ,  H01L21/02282 ,  H01L21/02288 ,  H01L21/02318 ,  H01L21/324

Abstract: In one aspect, the present invention provides undoped and doped siloxanes, germoxanes, and silagermoxanes that are substantially free from carbon and other undesired contaminants. In a second aspect, the present invention provides methods for making such undoped and doped siloxanes, germoxanes, and silagermoxanes. In still another aspect, the present invention provides compositions comprising undoped and/or doped siloxanes, germoxanes, and silagermoxanes and a solvent, and methods for forming undoped and doped dielectric films from such compositions. Undoped and/or doped siloxane compositions as described advantageously provide undoped and/or doped dielectric precursor inks that may be employed in forming substantially carbon-free undoped and/or doped dielectric films.

公开(公告)号：US09640390B1

公开(公告)日：2017-05-02

申请号：US13889243

申请日：2013-05-07

Applicant: Thin Film Electronics ASA

Inventor： Wenzhuo Guo ,  Fabio Zurcher ,  Arvind Kamath ,  Joerg Rockenberger

IPC: H01L21/02 ,  C08G77/56 ,  H01L27/12 ,  H01L29/66 ,  C09D183/16 ,  H01L21/208

CPC classification number: H01L21/02667 ,  C08G77/56 ,  C08K5/55 ,  C08K2201/001 ,  C09D11/52 ,  C09D183/16 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02628 ,  H01L21/208 ,  H01L27/1292 ,  H01L29/167 ,  H01L29/66757

Abstract: Doped semiconductor ink formulations, methods of making doped semiconductor ink formulations, methods of coating or printing thin films, methods of forming electronic devices and/or structures from the thin films, and methods for modifying and controlling the threshold voltage of a thin film transistor using the films are disclosed. A desired dopant may be added to an ink formulation comprising a Group IVA compound and a solvent, and then the ink may be printed on a substrate to form thin films and conductive structures/devices, such as thin film transistors. By adding a customized amount of the dopant to the ink prior to printing, the threshold voltage of a thin film transistor made from the doped semiconductor ink may be independently controlled upon activation of the dopant.