摘要:
A probe-based data storage device includes a storage surface having an array of A storage fields; a probe array comprising A probes for writing data to respective storage fields; and an apparatus for controlling writing of blocks of user data in the array of storage fields.
摘要:
Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r·C=k1A where r is the number of codewords and k1 is an integer greater than or equal to 1. A sub-blocks of k1 bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.
摘要:
Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r·C=k1A where r is the number of codewords and k1 is an integer greater than or equal to 1. A sub-blocks of k1 bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.
摘要:
Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method provides error-tolerance by exploiting the inherent parallelism of the probe storage array. A user data block to be written to the A-field array is first coded to produce a plurality of C-byte codewords, such that r.C=k1.A where r is the number of codewords and k1 is an integer≧1. A sub-blocks of k1 bytes are produced from the codewords by selecting successive bytes of each sub-block cyclically from the r codewords. The A sub-blocks are then written via respective probes to the corresponding storage fields of the storage field array.
摘要翻译:提供了用于控制在基于探针的数据存储设备的A个存储区域阵列中的数据的写入和读取的方法和装置,其中通过相应的探针阵列将数据写入存储区阵列并从存储区域读取数据。 一种方法通过利用探针存储阵列的固有并行性来提供容错性。 要写入A场阵列的用户数据块首先被编码以产生多个C字节码字,使得r C = k 1 A其中r是码字数,k <1> SUB>是整数> = 1。 通过从r个码字周期性地选择每个子块的连续字节,从码字产生k 1个字节的子块。 然后通过相应的探针将A个子块写入存储字段阵列的对应存储字段。
摘要:
Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method uses the concept of sub-arrays to provide variable-rate read/write operation. Input data blocks are received for writing to the A-field array, each input data block being writable in A/k0 storage fields where k0 is an integer>=2. For successive groups of k0 blocks, the k0 blocks are written to respective sub-arrays, each of A/k0 storage fields, of the storage field array by selectively writing at one of a series of rates, ranging from 1 block at a time to k0 blocks at a time, in dependence on a desired data write-rate. The blocks can also be read from the sub-arrays by selectively reading at one of a series of rates, ranging from 1 sub-array at a time to k0 sub-arrays at a time, in dependence on a desired data read-rate.
摘要:
Methods and apparatus are provided for controlling writing and reading of data in an array of A storage fields of a probe-based data storage device in which data is written to and read from the array of storage fields by a corresponding array of probes. One method uses the concept of sub-arrays to provide variable-rate read/write operation. Input data blocks are received for writing to the A-field array, each input data block being writable in A/k0 storage fields where k0 is an integer ≧2. For successive groups of k0 blocks, the k0 blocks are written to respective sub-arrays, each of A/k0 storage fields, of the storage field array by selectively writing at one of a series of rates, ranging from 1 block at a time to k0 blocks at a time, in dependence on a desired data write-rate. The blocks can also be read from the sub-arrays by selectively reading at one of a series of rates, ranging from 1 sub-array at a time to k0 sub-arrays at a time, in dependence on a desired data read-rate.
摘要翻译:提供了用于控制在基于探针的数据存储设备的A个存储区域阵列中的数据的写入和读取的方法和装置,其中通过相应的探针阵列将数据写入存储区阵列并从存储区域读取数据。 一种方法使用子阵列的概念来提供可变速率的读/写操作。 接收用于写入A字阵列的输入数据块,每个输入数据块可在A / k 0存储区域中写入,其中k <0>是整数> = 2 。 对于k个块的连续组,将k个0个块写入相应的子阵列,每个A / k 0个存储场, 根据期望的数据写入速率,通过以一系列速率中的一个选择性地写入,每次从一个块到每个块块一次块。 也可以通过选择性地以一系列速率中的一种读取从子阵列中读出的块,从一个子阵列一次一个子阵列到一个子阵列,依次 以期望的数据读取速率。
摘要:
A storage device and a method for scanning a storage medium. A storage medium for storing data in the form of marks is scanned by an array of probes for mark detecting purposes in a scanning mode. The storage medium has fields with each field to be scanned by an associated one of the probes. At least one of the fields has marks representing operational data for operating the scanning mode. Scanning parameters are computed from the operational data and the scanning mode is adjusted according to the computed parameters.
摘要:
A storage device and a method for scanning a storage medium. A storage medium for storing data in the form of marks is scanned by an array of probes for mark detecting purposes in a scanning mode. The storage medium has fields with each field to be scanned by an associated one of the probes. At least one of the fields has marks representing operational data for operating the scanning mode. Scanning parameters are computed from the operational data and the scanning mode is adjusted according to the computed parameters.
摘要:
A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.
摘要:
System and method for generating a Position Error Signal (PES) reference curve in data storage devices are provided. The method includes scanning a distance of at least one Track Pitch (TP) in a cross-track direction in each servo-burst along a predefined path. One or more TPs in each servo-burst are scanned with a read head. The method further includes, calculating a plurality of samples of each differential signal. A differential signal corresponds to a first read-back signal and a second read-back signal. Thereafter, a plurality of normalized signals are determined. A normalized signal is determined by dividing each sample of the differential signal with a normalization constant. The plurality of normalized signals are combined to generate the PES reference curve.