Semiconductor processing component
    2.
    发明授权
    Semiconductor processing component 有权
    半导体处理部件

    公开(公告)号:US06709608B2

    公开(公告)日:2004-03-23

    申请号:US10199273

    申请日:2002-07-22

    IPC分类号: C03C1500

    CPC分类号: H01L21/76232 H01L21/306

    摘要: A semiconductor processing component includes a quartz body characterized by silicon oxide filled micro cracks. The component is utilized as a processing component in a semiconductor furnace system. The quartz body is prepared by cleaning the component to remove a build up silicon layer and to expose micro cracks in the surface of the component and to etch the micro cracks into trenches. A silicon layer is applied onto the processing component body and at least a portion of the silicon is oxidized to silica to fill the trenches in the surface of the component body.

    摘要翻译: 半导体处理部件包括以氧化硅填充的微裂纹为特征的石英体。 该部件用作半导体炉系统中的处理部件。 通过清洁组件以除去积聚硅层并暴露组件表面中的微裂纹并将微裂纹蚀刻成沟槽来制备石英体。 将硅层施加到处理部件主体上,并且硅的至少一部分被氧化成二氧化硅以填充部件主体的表面中的沟槽。

    Quartz making an elongated fused quartz article using a furnace with metal-lined walls
    5.
    发明授权
    Quartz making an elongated fused quartz article using a furnace with metal-lined walls 有权
    使用具有金属衬里的墙壁的炉子制造细长的熔融石英制品

    公开(公告)号:US06739155B1

    公开(公告)日:2004-05-25

    申请号:US09636286

    申请日:2000-08-10

    IPC分类号: C03B3702

    摘要: A crucible for melting a silica for fusion of said silica into a desired shape. The crucible having a main body with inner and outer surfaces comprised of a refractory material. In addition, at least a portion of the inner surface includes a barrier layer comprised of a material selected from rhenium, osmium, iridium, and mixtures thereof. An inlet tube to the crucible being provided to supply an oxidizing gas to a melt zone.

    摘要翻译: 一种用于熔化二氧化硅以将所述二氧化硅熔融成所需形状的坩埚。 该坩埚具有内表面和外表面由耐火材料构成的主体。 此外,内表面的至少一部分包括由选自铼,锇,铱及其混合物的材料构成的阻挡层。 提供到坩埚的入口管以将氧化气体供应到熔融区。