公开(公告)号：US20070162889A1

公开(公告)日：2007-07-12

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

发明人： Douglas Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

IPC分类号： H01L21/302 ,  H01L21/461 ,  G06F17/50 ,  G03F1/00

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

公开(公告)号：US20050142449A1

公开(公告)日：2005-06-30

申请号：US10933496

申请日：2004-09-03

申请人： Xuelong Shi ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke

发明人： Xuelong Shi ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F9/00 ,  G06F17/50 ,  H01L21/027

CPC分类号： G03F7/705 ,  G03F1/36

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 基于所述目标图案来确定第一干涉图，所述目标图案定义要成像的至少一个要素与邻近所述至少一个特征的场区域之间的建构性干扰的区域; 基于由第一干涉图定义的建构性干扰的区域，在掩模设计中放置具有第一相位的第一组辅助特征; 基于所述第一组辅助特征确定第二干涉图，所述第一组辅助特征限定所述第一组辅助特征的辅助特征之间的建构性干扰的区域和与所述第一组辅助特征的所述辅助特征中的至少一个邻近的场区域; 以及基于由所述第二干涉图定义的构成性干扰的区域，将具有第二相位的第二组辅助特征放置在所述掩模设计中，其中所述第一相位不等于所述第二相位。

公开(公告)号：US20050074677A1

公开(公告)日：2005-04-07

申请号：US10880376

申请日：2004-06-30

申请人： Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke ,  Jang Chen

发明人： Thomas Laidig ,  Kurt Wampler ,  Douglas Broeke ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G06F17/00 ,  G06F17/50 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F1/36

摘要： A method of forming a mask having optical proximity correction features, which includes the steps of obtaining a target pattern of features to be imaged, expanding the width of the features to be imaged, modifying the mask to include assist features which are placed adjacent the edges of the features to be imaged, where the assist features have a length corresponding to the expanded width of the features to be imaged, and returning the features to be imaged from the expanded width to a width corresponding to the target pattern.

摘要翻译： 一种形成具有光学邻近校正特征的掩模的方法，其包括以下步骤：获得要成像的特征的目标图案，扩大要成像的特征的宽度，修改掩模以包括邻近边缘的辅助特征 的要成像的特征，其中辅助特征具有对应于要成像的特征的扩展宽度的长度，以及将要成像的特征从扩展宽度返回到对应于目标图案的宽度。

公开(公告)号：US20080067143A1

公开(公告)日：2008-03-20

申请号：US11822538

申请日：2007-07-06

申请人： Douglas Broeke ,  Kurt Wampler ,  Jang Chen

发明人： Douglas Broeke ,  Kurt Wampler ,  Jang Chen

IPC分类号： C25F3/00

CPC分类号： G03F1/32 ,  G03F1/34

摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of depositing a layer of transmissive material having a predefined percentage transmission on a substrate; depositing a layer of opaque material on the transmissive material; etching a portion of the substrate, the substrate being etched to a depth based on an etching selectivity between the transmissive layer and the substrate; exposing a portion of the transmissive layer by etching the opaque material; etching the exposed portion of the transmissive layer so as to expose an upper surface of the substrate; where the exposed portions of the substrate and the etched portions of the substrate exhibit a predefined phase shift relative to one another with respect to an illumination signal.

摘要翻译： 一种生成用于打印包括多个特征的图案的掩模的方法。 该方法包括以下步骤：在衬底上沉积具有预定百分比透射率的透射材料层; 在透射材料上沉积不透明材料层; 蚀刻衬底的一部分，基于在透射层和衬底之间的蚀刻选择性，将衬底蚀刻到深度; 通过蚀刻不透明材料暴露透射层的一部分; 蚀刻透射层的暴露部分以暴露衬底的上表面; 其中衬底的暴露部分和衬底的蚀刻部分相对于照明信号相对于彼此表现出预定的相移。

公开(公告)号：US20050125765A1

公开(公告)日：2005-06-09

申请号：US11035737

申请日：2005-01-18

申请人： Doug Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

发明人： Doug Broeke ,  Jang Chen ,  Thomas Laidig ,  Kurt Wampler ,  Stephen Hsu

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G06F17/50 ,  G03F9/00 ,  G21K5/00

CPC分类号： G03F1/34 ,  G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70466 ,  G03F7/70941

摘要： A method of generating a mask of use in printing a target pattern on a substrate. The method includes the steps of (a) determining a maximum width of features to be imaged on the substrate utilizing phase-structures formed in the mask; (b) identifying all features contained in the target pattern having a width which is equal to or less than the maximum width; (c) extracting all features having a width which is equal to or less than the maximum width from the target pattern; (d) forming phase-structures in the mask corresponding to all features identified in step (b); and (e) forming opaque structures in the mask for all features remaining in target pattern after performing step (c).

摘要翻译： 一种生成用于在基板上印刷目标图案的掩模的方法。 该方法包括以下步骤：（a）使用形成在掩模中的相位结构来确定要在基板上成像的特征的最大宽度; （b）识别具有等于或小于最大宽度的宽度的目标图案中包含的所有特征; （c）从目标图案提取具有等于或小于最大宽度的宽度的所有特征; （d）在对应于在步骤（b）中识别的所有特征的掩模中形成相位结构; 和（e）在执行步骤（c）之后，在掩模中形成不透明结构以保持目标图案中的所有特征。

公开(公告)号：US20070117030A1

公开(公告)日：2007-05-24

申请号：US11655868

申请日：2007-01-22

申请人： Thomas Laidig ,  Jang Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt Wampler

发明人： Thomas Laidig ,  Jang Chen ,  Xuelong Shi ,  Ralph Schlief ,  Uwe Hollerbach ,  Kurt Wampler

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/68

摘要： A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.

摘要翻译： 一种用于产生用于使用成像系统将形成在掩模中的图案光学转印到基板上的光刻掩模的方法。 该方法包括以下步骤：（a）定义以数据格式表示的一组校准图案; （b）使用给定的成像系统在校准图案上印刷校准图案; （c）确定与在所述基板上成像的所述校准图案相对应的第一组轮廓图案; （d）产生近似成像系统的成像性能的系统伪强度函数; （e）通过利用所述系统伪强度函数来确定所述校准图案将如何在所述衬底中成像而确定第二组轮廓图案; （f）比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; （g）调整所述系统伪强度函数，直到所述第一组轮廓图案与所述第二组轮廓图案之间的差低于预定标准; 和（h）利用调整后的系统伪强度函数来修改掩模，以提供光学邻近校正。

公开(公告)号：US20050186491A1

公开(公告)日：2005-08-25

申请号：US11108665

申请日：2005-04-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Broeke ,  Jang Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Broeke ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01L21/027 ,  G03F7/00

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

公开(公告)号：US20060075377A1

公开(公告)日：2006-04-06

申请号：US11208015

申请日：2005-08-22

申请人： Douglas Broeke ,  Jang Chen

发明人： Douglas Broeke ,  Jang Chen

IPC分类号： G03C5/00 ,  G06F17/50 ,  G03F1/00

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A method of generating a mask having optical proximity correction features. The method includes the steps of: (a) obtaining a desired target pattern having features to be imaged on a substrate; (b) determining a first focus setting to be utilized when imaging the mask; (c) determining a first interference map based on the target pattern and the first focus setting; (d) determining a first seeding site representing the optimal placement of an assist feature within the mask relative to a feature to be imaged on the basis of the first interference map; (e) selecting a second focus setting which represents a predefined amount of defocus relative to the first focus setting; (f) determining a second interference map based on the target pattern and the second focus setting; (g) determining a second seeding site representing the optimal placement of an assist feature within the mask relative to the feature to be imaged on the basis of the second interference map; and (h) generating an assist feature having a shape which encompasses both the first seeding site and the second seeding site.

公开(公告)号：US20070042277A1

公开(公告)日：2007-02-22

申请号：US11588326

申请日：2006-10-27

申请人： Duan-Fu Hsu ,  Kurt Wampler ,  Markus Antonius Eurlings ,  Jang Chen ,  Noel Corcoran

发明人： Duan-Fu Hsu ,  Kurt Wampler ,  Markus Antonius Eurlings ,  Jang Chen ,  Noel Corcoran

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F7/705 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70441 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a multiple-exposure lithographic imaging process. The method includes the steps of: identifying a target pattern having a plurality of features comprising horizontal and vertical edges; generating a horizontal mask based on the target pattern; generating a vertical mask based on the target pattern; performing a shielding step in which at least one of the vertical edges of the plurality of features in the target pattern is replaced by a shield in the horizontal mask, and in which at least one of the horizontal edges of the plurality of features in the target pattern is replaced by a shield in the vertical mask, where the shields have a width which is greater that the width of the corresponding feature in the target pattern; performing an assist feature placement step in which sub-resolution assist features are disposed parallel to at least one of the horizontal edges of the plurality of features in the horizontal mask, and are disposed parallel to at least one of the vertical edges of the plurality of features in the vertical mask, and performing a feature biasing step in which at least one of the horizontal edges of the plurality of features in the horizontal mask are adjusted such that the resulting feature accurately reproduces the target pattern, and at least one of the vertical edges of the plurality of features in the vertical mask are adjusted such that the resulting feature accurately reproduces the target pattern.

摘要翻译： 一种产生用于多次曝光光刻成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有包括水平和垂直边缘的多个特征的目标图案; 基于目标图案生成水平掩模; 基于目标图案生成垂直掩模; 执行屏蔽步骤，其中目标图案中的多个特征的至少一个垂直边缘被水平掩模中的屏蔽替换，并且其中目标中的多个特征中的至少一个水平边缘 图案由垂直掩模中的屏蔽代替，其中屏蔽具有大于目标图案中相应特征的宽度的宽度; 执行辅助特征放置步骤，其中副分辨率辅助特征平行于水平掩模中的多个特征中的至少一个水平边缘设置，并且平行于多个垂直边缘中的至少一个垂直边缘 特征，并且执行特征偏置步骤，其中水平掩模中的多个特征的水平边缘中的至少一个被调整，使得所得到的特征精确地再现目标图案，并且垂直屏蔽中的至少一个垂直 调整垂直掩模中的多个特征的边缘，使得所得到的特征精确地再现目标图案。

公开(公告)号：US20050053848A1

公开(公告)日：2005-03-10

申请号：US10878490

申请日：2004-06-29

申请人： Kurt Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Chen

发明人： Kurt Wampler ,  Douglas Van Den Broeke ,  Uwe Hollerbach ,  Xuelong Shi ,  Jang Chen

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F9/00 ,  G06F17/00 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F1/36 ,  G03F7/70433 ,  G03F7/70441

摘要： Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.

摘要翻译： 所公开的概念包括通过产生对应于图案的图像场图来产生要形成在基板的表面上的图案的辅助特征的方法，程序产品和装置。 从图像场图中提取特征，并根据步骤中提取的特征为图案生成辅助特征。 辅助特征可以相对于图像场图的轮廓的主轴定向。 此外，辅助特征可以是多边形形状并且尺寸设计成围绕轮廓或相对于轮廓的内部。 此外，可以根据从图像场地图识别的极值放置辅助特征。 利用图像场图，可以避免用于产生辅助特征的常规和复杂的基于二维规则的方法。