摘要:
Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要:
Disclosed concepts include a method, program product and apparatus for generating assist features for a pattern to be formed on the surface of a substrate by generating an image field map corresponding to the pattern. Characteristics are extracted from the image field map, and assist features are generated for the pattern in accordance with the characteristics extracted in step. The assist features may be oriented relative to a dominant axis of a contour of the image field map. Also, the assist features may be polygon-shaped and sized to surround the contour or relative to the inside of the contour. Moreover, the assist features may be placed in accordance with extrema identified from the image field map. Utilizing the image field map, a conventional and complex two-dimensional rules-based approach for generating assist feature can be obviated.
摘要:
A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
摘要:
A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.
摘要:
A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.
摘要:
A method of determining calibration test patterns to be utilized to calibrate a model for simulating the imaging performance of an optical imaging system. The method includes the steps of defining design rules associated with a given imaging process; defining a model equation representing the imaging performance of the optical imaging system; determining a boundary of an imaging signal space based on the design rules; selecting calibration patterns based on the boundary of the imaging signal space such that the calibration patterns are on the boundary or within the boundary of the imaging signal space; and storing the selected calibration test patterns, where the calibration test patterns are utilized to calibrate the model for simulating the imaging performance of the optical imaging system.
摘要:
Disclosed concepts include a method of optimizing an illumination profile of a pattern to be formed in a surface of a substrate. Illumination is optimized by defining a transmission cross coefficient (“TCC”) function determined in accordance with an illumination pupil and a projection pupil corresponding to an illuminator, representing at least one resolvable feature of a mask to be printed on the substrate by at least one impulse function, and creating an interference map of a predetermined order based on the at least one impulse function and the TCC function, wherein the interference map represents the at least one resolvable feature to be printed on the substrate and areas of destructive interference.
摘要:
A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.
摘要:
Model OPC is developed based on eigen decomposition of an aerial image expected to be produced by a mask pattern on a surface of a resist. With the eigen decomposition method the aerial image intensity distribution around a point (x, y) is accurately described in the model. A scalar approach may be used in the eigen decomposition model which treats the light wave through the mask as a scalar quantity. A eigen decomposition alternatively may use a vector approach which utilizes a vector to describe the light wave and the pupil function. A predicted SPIF may be generated from the aerial image which may be used to verify the mask modeling process by comparing the predicted SPIF to an experimentally determined SPIF. The model OPC, once calibrated, may be used to evaluate performance of a mask and refine features of the mask.
摘要:
A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining a first interference map based on the target pattern, which defines areas of constructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; placing a first set of assist features having a first phase in the mask design based on the areas of constructive interference defined by the first interference map; determining a second interference map based on the first set of assist features, which defines areas of constructive interference between assist features of the first set of assist features and a field area adjacent at least one of the assist features of the first set of assist features; and placing a second set of assist features having a second phase in the mask design based on the areas of constructive interference defined by the second interference map, wherein the first phase does not equal the second phase.