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公开(公告)号：US20120273342A1
公开(公告)日：2012-11-01
申请号：US13451459
申请日：2012-04-19
Applicant: Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey
Inventor： Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey
Abstract: An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.
Abstract translation: 离子源包括导电衬底，衬底包括形成在衬底上的多个具有独立尖端的导电纳米结构。 在纳米结构和衬底上形成导电催化涂层，用于将分子物质解离成原子物质，使分子物质与催化涂层接触。 目标电极与衬底分开放置，目标电极相对于衬底被偏压，具有第一偏置电压，以将原子物质离子化成离开独立的尖端，并从衬底沿着方向吸引离子化的原子物质 目标电极。
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公开(公告)号：US08709350B2
公开(公告)日：2014-04-29
申请号：US13451459
申请日：2012-04-19
Applicant: Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey
Inventor： Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey
IPC: B01J19/08
Abstract: An ion source includes a conductive substrate, the substrate including a plurality of conductive nanostructures with free-standing tips formed on the substrate. A conductive catalytic coating is formed on the nanostructures and substrate for dissociation of a molecular species into an atomic species, the molecular species being brought in contact with the catalytic coating. A target electrode placed apart from the substrate, the target electrode being biased relative to the substrate with a first bias voltage to ionize the atomic species in proximity to the free-standing tips and attract the ionized atomic species from the substrate in the direction of the target electrode.
Abstract translation: 离子源包括导电衬底，衬底包括形成在衬底上的多个具有独立尖端的导电纳米结构。 在纳米结构和衬底上形成导电催化涂层，用于将分子物质解离成原子物质，使分子物质与催化涂层接触。 目标电极与衬底分开放置，目标电极相对于衬底被偏压，具有第一偏置电压，以将原子物质离子化成离开独立的尖端，并从衬底沿着方向吸引离子化的原子物质 目标电极。
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Patent Agency Ranking
公开(公告)号：US20130044846A1
公开(公告)日：2013-02-21
申请号：US13451475
申请日：2012-04-19
Applicant: Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey , Constance Chang-Hasnain , Ivo Rangelow , Joe Kwan
Inventor： Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey , Constance Chang-Hasnain , Ivo Rangelow , Joe Kwan
Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.
Abstract translation: 中子发生器包括导电衬底，该导电衬底包括具有独立尖端的多个导电纳米结构和用于将原子种类引入到独立尖端附近的原子物质的源。 离开衬底的目标物体相对于衬底具有电压偏置，以将离子化的原子物质离子化并加速至目标物。 目标包括能够与电离原子物质进行核聚变反应以产生作为反应副产物的一个或多个中子的元素。
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公开(公告)号：US09161429B2
公开(公告)日：2015-10-13
申请号：US13451475
申请日：2012-04-19
Applicant: Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey , Constance Chang-Hasnain , Ivo Rangelow , Joe Kwan
Inventor： Thomas Schenkel , Arun Persaud , Rehan Kapadia , Ali Javey , Constance Chang-Hasnain , Ivo Rangelow , Joe Kwan
Abstract: A neutron generator includes a conductive substrate comprising a plurality of conductive nanostructures with free-standing tips and a source of an atomic species to introduce the atomic species in proximity to the free-standing tips. A target placed apart from the substrate is voltage biased relative to the substrate to ionize and accelerate the ionized atomic species toward the target. The target includes an element capable of a nuclear fusion reaction with the ionized atomic species to produce a one or more neutrons as a reaction by-product.
Abstract translation: 中子发生器包括导电衬底，该导电衬底包括具有独立尖端的多个导电纳米结构和用于将原子种类引入到独立尖端附近的原子物质的源。 离开衬底的目标物体相对于衬底具有电压偏置，以将离子化的原子物质离子化并加速至目标物。 目标包括能够与电离原子物质进行核聚变反应以产生作为反应副产物的一个或多个中子的元素。
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公开(公告)号：US20140290737A1
公开(公告)日：2014-10-02
申请号：US14243586
申请日：2014-04-02
Applicant: Ali Javey , Zhibin Yu , Rehan Kapadia
Inventor： Ali Javey , Zhibin Yu , Rehan Kapadia
IPC: H01L31/0368 , H01L31/0304 , H01L31/18
CPC classification number: H01L31/0368 , H01L31/0304 , H01L31/1852 , Y02E10/544 , Y02P70/521
Abstract: A composition comprising a substrate, a polycrystalline III-V semiconductor layer, and an oxide layer disposed above the polycrystalline III-V semiconductor layer is described. A growth method that enables fabrication of continuous thin films of polycrystalline indium phosphide (InP) directly on metal foils is described. The method describes the deposition of an indium (In) thin film (up to 20 microns thick) directly on molybedenum (Mo) foil, followed by the deposition of a thin oxide capping layer (up to 1 micron thick). This capping layer prevents dewetting of the In from the substrate during subsequent high temperature processing steps. The Mo/In/Capping Layer stack is then heated in the presence of phosphorous precursors, causing supersaturation of the liquid indium with phosphorous, followed by precipitation of InP. These polycrystalline III-V films have grain sizes 100-200 microns, minority carrier lifetimes >2 ns and hall mobilities of 500 cm̂2/V-s.
Abstract translation: 描述了包括基板，多晶III-V半导体层和设置在多晶III-V半导体层上方的氧化物层的组合物。 描述了能够直接在金属箔上制造多晶磷化铟（InP）的连续薄膜的生长方法。 该方法描述了直接在钼（Mo）箔上沉积铟（In）薄膜（直到20微米厚），然后沉积薄氧化物覆盖层（高达1微米厚）。 该封盖层防止在随后的高温处理步骤期间将In从衬底中去湿。 然后在磷前体的存在下加热Mo / In / Capping层堆叠，引起液体铟与磷过饱和，然后沉淀InP。 这些多晶III-V膜的晶粒尺寸为100-200微米，少数载流子寿命> 2ns，霍尔迁移率为500 cm2 / V-s。
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公开(公告)号：US20170175290A1
公开(公告)日：2017-06-22
申请号：US15354063
申请日：2016-11-17
Applicant: Kevin Chen , Rehan Kapadia , Ali Javey
Inventor： Kevin Chen , Rehan Kapadia , Ali Javey
CPC classification number: C30B1/10 , C30B1/02 , C30B25/02 , C30B25/04 , C30B29/40 , C30B29/403 , H01L21/02422 , H01L21/02428 , H01L21/02488 , H01L21/02494 , H01L21/02505 , H01L21/02538 , H01L21/02543
Abstract: This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.
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公开(公告)号：US10087547B2
公开(公告)日：2018-10-02
申请号：US15354063
申请日：2016-11-17
Applicant: Kevin Chen , Rehan Kapadia , Ali Javey
Inventor： Kevin Chen , Rehan Kapadia , Ali Javey
Abstract: This disclosure provides systems, methods, and apparatus related to the growth of single crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a semiconductor structure to be formed on an amorphous substrate is defined in a resist disposed on the amorphous substrate. A boron group element is deposited over the amorphous substrate. A ceramic material is deposited on the boron group element. The resist is removed from the amorphous substrate. The ceramic material is deposited to cover the boron group element. The amorphous substrate and materials deposited thereon are heated in the presence of a gas including a nitrogen group element to grow a single crystal semiconductor structure comprising the boron group element and the nitrogen group element.
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