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1.发明授权Siloxane-polymer dielectric compositions and related organic field-effect transistors 有权硅氧烷 - 聚合物电介质组合物和相关的有机场效应晶体管公开(公告)号：US08093588B2
公开(公告)日：2012-01-10
申请号：US12562800
申请日：2009-09-18
申请人： Tobin J. Marks , Antonio Facchetti , Myung-Han Yoon , He Yan
发明人： Tobin J. Marks , Antonio Facchetti , Myung-Han Yoon , He Yan
CPC分类号： H01L51/052 , H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0078
摘要： Dielectric compositions comprising siloxane and polymeric components, as can be used in a range of transistor and related device configurations.
摘要翻译： 包含硅氧烷和聚合物组分的介电组合物，可用于晶体管和相关器件配置的范围。
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2.发明申请Diimide-based semiconductor materials and methods of preparing and using the same 有权基于二酰亚胺的半导体材料及其制备和使用方法公开(公告)号：US20080185577A1
公开(公告)日：2008-08-07
申请号：US11986019
申请日：2007-11-19
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
CPC分类号： C07D471/06 , C07D487/06 , C09B5/62 , C09B57/08 , H01L51/0053 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Diimide-based semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the diimide-based semiconductor materials also are provided.
摘要翻译： 二酰亚胺类半导体材料具有制备该半导体材料的方法。 还提供了包括二酰亚胺类半导体材料的复合材料和电子器件。
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3.发明授权Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same 有权制备芳烃-BIS（二甲酰亚胺）基半导体材料及其相关中间体的制备方法公开(公告)号：US07893265B2
公开(公告)日：2011-02-22
申请号：US12006934
申请日：2008-01-07
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
IPC分类号： C07D471/02 , C07D493/02
CPC分类号： C07D491/06 , C07D471/06 , C07D487/04 , C09B5/62 , C09B57/08
摘要： The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
摘要翻译： 本教导提供式I和II的化合物：其中Q，Ra，R1，W和n如本文所定义。 本教导还提供制备式I和II化合物的方法，包括由式I化合物制备式II化合物的方法。本文公开的化合物可用于制备半导体材料及相关复合材料和电子器件。
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公开(公告)号：US08022214B2
公开(公告)日：2011-09-20
申请号：US12011030
申请日：2008-01-23
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
IPC分类号： C07D471/08 , H01L21/36 , H01L51/50
CPC分类号： C07D471/06 , C07D471/12 , H01L51/0053 , Y02E10/549
摘要： The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds.
摘要翻译： 本发明提供新颖的有机半导体化合物及其可溶性前体，制备这些化合物和前体的方法，以及掺入这些化合物的组合物，材料，制品，结构和装置。
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5.发明授权Photopolymer-based dielectric materials and methods of preparation and use thereof 有权基于光聚合物的介电材料及其制备方法和用途公开(公告)号：US07981989B2
公开(公告)日：2011-07-19
申请号：US11998159
申请日：2007-11-28
申请人： He Yan , Antonio Facchetti , Tobin J. Marks
发明人： He Yan , Antonio Facchetti , Tobin J. Marks
CPC分类号： C08F220/10
摘要： Photopolymer-based dielectric materials are provided with methods for preparing the same. Composites and electronic devices including such dielectric materials also are provided.
摘要翻译： 提供基于光聚合物的介电材料具有制备该介电材料的方法。 还提供了包括这种电介质材料的复合材料和电子器件。
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6.发明申请Methods for preparing arene-BIS (dicarboximide)-based semiconducting materials and related intermediates for preparing same 有权制备芳烃-BIS（二甲酰亚胺）基半导体材料及其相关中间体的制备方法公开(公告)号：US20080177073A1
公开(公告)日：2008-07-24
申请号：US12006934
申请日：2008-01-07
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
IPC分类号： C07D471/22 , C07D311/78 , C07D209/56 , C07D307/77
CPC分类号： C07D491/06 , C07D471/06 , C07D487/04 , C09B5/62 , C09B57/08
摘要： The present teachings provide compounds of formulae I and II: where Q, Ra, R1, W, and n are as defined herein. The present teachings also provide methods of preparing compounds of formulae I and II, including methods of preparing compounds of formula II from compounds of formula I. The compounds disclosed herein can be used to prepare semiconductor materials and related composites and electronic devices.
摘要翻译： 本发明提供式I和II化合物：其中Q，R a，R 1，W和n如本文所定义。 本教导还提供制备式I和II化合物的方法，包括由式I化合物制备式II化合物的方法。本文公开的化合物可用于制备半导体材料及相关复合材料和电子器件。
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公开(公告)号：US20110136333A1
公开(公告)日：2011-06-09
申请号：US12994596
申请日：2009-05-29
申请人： Antonio Facchetti , Zhihua Chen , Florian Doetz , Marcel Kastler , Tobin J. Marks , He Yan , Yan Zheng
发明人： Antonio Facchetti , Zhihua Chen , Florian Doetz , Marcel Kastler , Tobin J. Marks , He Yan , Yan Zheng
IPC分类号： H01L21/44 , C07D471/06 , H01B1/12 , B05D5/12
CPC分类号： C07D471/06 , C09B3/78 , C09B5/62 , C09B57/08 , H01L51/0053 , H01L51/0068 , H01L51/0069 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Disclosed are new semiconductor materials prepared from dimeric perylene compounds. Such compounds can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
摘要翻译： 公开了由二聚苝化合物制备的新的半导体材料。 这种化合物可表现出高的n型载流子迁移率和/或良好的电流调制特性。 此外，本教导的化合物可以具有某些加工优点，例如在环境条件下的溶液加工性和/或良好的稳定性。
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公开(公告)号：US20080249309A1
公开(公告)日：2008-10-09
申请号：US12011030
申请日：2008-01-23
申请人： Antonio Facchetti , Tobin J. Marks , He Yan
发明人： Antonio Facchetti , Tobin J. Marks , He Yan
IPC分类号： C07D471/06 , H01L51/40
CPC分类号： C07D471/06 , C07D471/12 , H01L51/0053 , Y02E10/549
摘要： The present teachings provide novel organic semiconductor compounds and their soluble precursors, methods for preparing these compounds and precursors, as well as compositions, materials, articles, structures, and devices that incorporate such compounds.
摘要翻译： 本发明提供新颖的有机半导体化合物及其可溶性前体，制备这些化合物和前体的方法，以及掺入这些化合物的组合物，材料，制品，结构和装置。
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9.发明申请公开(公告)号：US20080167435A1
公开(公告)日：2008-07-10
申请号：US11977418
申请日：2007-10-24
申请人： Tobin J. Marks , Antonio Facchetti , He Yan
发明人： Tobin J. Marks , Antonio Facchetti , He Yan
IPC分类号： C08F226/06 , C07D491/06 , C07D491/048
CPC分类号： C07D519/00 , C08F226/06 , C09B5/62 , C09B69/103 , H01L51/0026 , H01L51/004 , H01L51/0053 , H01L51/0058 , H01L51/0545 , H01L51/0558 , H01L2924/19041
摘要： Solution-processable organic n-type semiconductor materials are provided with processes for preparing the same. Composites and electronic devices including the organic n-type semiconductor materials also are provided.
摘要翻译： 可溶液加工的有机n型半导体材料具有制备方法。 还提供了包括有机n型半导体材料的复合材料和电子器件。
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10.发明申请Photopolymer-based dielectric materials and methods of preparation and use thereof 有权基于光聚合物的介电材料及其制备方法和用途公开(公告)号：US20080161524A1
公开(公告)日：2008-07-03
申请号：US11998159
申请日：2007-11-28
申请人： He Yan , Antonio Facchetti , Tobin J. Marks
发明人： He Yan , Antonio Facchetti , Tobin J. Marks
IPC分类号： C08F118/14 , C08F120/10 , C08F136/02 , C08J7/18
CPC分类号： C08F220/10
摘要： Photopolymer-based dielectric materials are provided with methods for preparing the same. Composites and electronic devices including such dielectric materials also are provided.
摘要翻译： 提供基于光聚合物的介电材料具有制备该介电材料的方法。 还提供了包括这种电介质材料的复合材料和电子器件。
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