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    Metal hydrides with embedded metal structures for hydrogen storage
    7.
    发明授权
    Metal hydrides with embedded metal structures for hydrogen storage 有权
    具有嵌入金属结构的金属氢化物用于储氢

    公开(公告)号：US09506603B2

    公开(公告)日：2016-11-29

    申请号：US13615988

    申请日：2012-09-14

    申请人： Wen Li ,  John J. Vajo ,  Alan J. Jacobsen ,  Mei Cai ,  Martin P. Sulic

    发明人： Wen Li ,  John J. Vajo ,  Alan J. Jacobsen ,  Mei Cai ,  Martin P. Sulic

    IPC分类号： F17C11/00

    CPC分类号： F17C11/005 ,  Y02E60/321 ,  Y10T29/49826

    摘要： One illustrative embodiment includes materials and devices including an integrated hydrogen storage structure including a plurality of continuously connected thermally conductive elongated members, the elongated members including continuously connected openings between the elongated members; and, a metal hydride material contacting the elongated members and disposed within the connected openings and surrounding the elongated members.

    摘要翻译： 一个说明性实施例包括包括包括多个连续连接的导热细长构件的集成氢存储结构的材料和装置，细长构件包括在细长构件之间的连续连接的开口; 以及金属氢化物材料，其与细长构件接触并且设置在连接的开口内并围绕细长构件。

    Driver Integrated Circuit
    10.
    发明申请
    Driver Integrated Circuit 有权
    驱动器集成电路

    公开(公告)号：US20140125398A1

    公开(公告)日：2014-05-08

    申请号：US14122623

    申请日：2012-05-24

    申请人： Wen Li ,  Norio Chujo ,  Masami Makuuchi ,  Takehito Kamimura

    发明人： Wen Li ,  Norio Chujo ,  Masami Makuuchi ,  Takehito Kamimura

    IPC分类号： H03K19/0175

    CPC分类号： H03K19/0175 ,  H01L2224/48137 ,  H01L2924/181 ,  H03F1/52 ,  H03F3/195 ,  H03F3/211 ,  H03F3/3022 ,  H03F2200/189 ,  H03K19/017509 ,  H01L2924/00012

    摘要： Provided is a configuration of a driver integrated circuit that can output a voltage exceeding the withstand voltage of a process, and that satisfies required apparatus performance (high speed and high voltage). A differential input circuit, a level shift circuit, and an output circuit are manufactured by the same process and divided and disposed on three or more chips with different substrate potentials (sub-potentials). By setting different applied voltages to the substrates of the chips, an output voltage greater than the process withstand voltage can be provided (see FIG. 2).

    摘要翻译： 提供可以输出超过工艺耐压的电压并满足所需设备性能（高速和高电压）的驱动器集成电路的结构。 差分输入电路，电平移位电路和输出电路通过相同的工艺制造并且被分配和布置在具有不同衬底电位（子电位）的三个或更多个芯片上。 通过对芯片的基板设置不同的施加电压，可以提供大于工艺耐受电压的输出电压（参见图2）。