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    RFID tag uncoupling one of its antenna ports and methods
    1.
    发明授权
    RFID tag uncoupling one of its antenna ports and methods 有权
    RFID标签解耦其天线端口之一和方法

    公开(公告)号：US07667589B2

    公开(公告)日：2010-02-23

    申请号：US10891894

    申请日：2004-07-14

    申请人： Dimitri C. Desmons ,  Ronald A. Oliver ,  Christopher J. Diorio ,  Todd E. Humes

    发明人： Dimitri C. Desmons ,  Ronald A. Oliver ,  Christopher J. Diorio ,  Todd E. Humes

    IPC分类号： G08B19/00

    CPC分类号： G06K19/07767 ,  G06K19/07749

    摘要： RFID tags have an on-chip antenna and an off-chip antenna. One of the antennas can become uncoupled if the proper signal is received, while the other antenna may still operate. The uncoupled antenna can be the larger one, for example the off-chip antenna. Then the tag can then be read only by the smaller antenna, which effectively reduces the range of the RFID tag, but without disabling it entirely.

    摘要翻译： RFID标签具有片上天线和片外天线。 如果接收到适当的信号，其中一个天线可能会脱耦，而另一个天线仍然可以工作。 非耦合天线可以是较大的天线，例如片外天线。 那么标签然后可以被较小的天线读取，这有效地减少了RFID标签的范围，但是没有完全禁用它。

    Schottky junction diode devices in CMOS with multiple wells
    4.
    发明授权
    Schottky junction diode devices in CMOS with multiple wells 有权
    具有多个阱的CMOS中的肖特基结二极管器件

    公开(公告)号：US08759937B2

    公开(公告)日：2014-06-24

    申请号：US11387515

    申请日：2006-03-22

    申请人： Yanjun Ma ,  Ronald A. Oliver ,  Todd E. Humes ,  Jaideep Mavoori

    发明人： Yanjun Ma ,  Ronald A. Oliver ,  Todd E. Humes ,  Jaideep Mavoori

    IPC分类号： H01L27/095 ,  H01L29/872 ,  H01L29/66 ,  H01L27/06

    CPC分类号： H01L29/872 ,  H01L27/0629 ,  H01L27/0814 ,  H01L29/66143

    摘要： A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such as to a second conductivity type opposite that of the first conductivity type. A second well is disposed within the first well. A region of metal-containing material is disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well. In one embodiment, a second well contact is disposed in a portion of the second well.

    摘要翻译： 在传统的CMOS工艺中制造了具有改进的性能和多阱结构的肖特基结二极管器件。 形成包括掺杂到第一导电类型的材料的衬底。 第一阱设置在衬底上。 第一阱包括不同掺杂的材料，例如与第一导电类型相反的第二导电类型。 第二口井设置在第一井内。 含金属材料的区域设置在第二阱中以在含金属材料区域和第二阱之间的界面处形成肖特基结。 在一个实施例中，第二井接触设置在第二井的一部分中。

    Schottky junction diode devices in CMOS
    5.
    发明授权
    Schottky junction diode devices in CMOS 有权
    CMOS中的肖特基结二极管器件

    公开(公告)号：US07732887B2

    公开(公告)日：2010-06-08

    申请号：US11387603

    申请日：2006-03-22

    申请人： Yanjun Ma ,  Ronald A. Oliver ,  Todd E. Humes ,  Jaideep Mavoori

    发明人： Yanjun Ma ,  Ronald A. Oliver ,  Todd E. Humes ,  Jaideep Mavoori

    IPC分类号： H01L31/07

    CPC分类号： H01L29/872 ,  H01L27/0629 ,  H01L27/0814 ,  H01L29/66143

    摘要： A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.

    摘要翻译： 具有改进性能的肖特基结二极管器件是在常规CMOS工艺中制造的。 形成包括掺杂到第一导电类型的材料的衬底。 第一阱设置在衬底上。 第一阱包括掺杂到与第一导电类型相反的第二导电类型的材料。 含金属材料的区域设置在第一阱之上，以在含金属材料区域和第一阱之间的界面处形成肖特基结。 在一个实施例中，第一井接触设置在第一井的一部分中。 第二阱设置在衬底上，其中第二阱包括掺杂到第一导电类型的材料。 在一个实施例中，第一井和第二井不彼此直接接触。

    Multiple RF-port modulator for RFID tag
    6.
    发明授权
    Multiple RF-port modulator for RFID tag 有权
    用于RFID标签的多个RF端口调制器

    公开(公告)号：US07616120B1

    公开(公告)日：2009-11-10

    申请号：US11712759

    申请日：2007-02-28

    申请人： Todd E. Humes ,  Ronald A. Oliver

    发明人： Todd E. Humes ,  Ronald A. Oliver

    IPC分类号： G08B13/14 ,  H01L21/336

    CPC分类号： H01L21/823425 ,  G06K19/0723 ,  H01L27/088

    摘要： Apparatus and systems may include integrated circuits for use with Radio Frequency Identification (RFID) tags having an antenna structure with at least three coupling ends. The integrated circuits may include three or more nodes corresponding respectively to the at least three coupling ends, and a modulator switch to receive a single modulator switching signal input. Methods may include those used to form and operate such circuits. Additional apparatus, systems, and methods are disclosed.

    摘要翻译： 设备和系统可以包括与具有至少三个耦合端的天线结构的射频识别（RFID）标签一起使用的集成电路。 集成电路可以包括分别对应于至少三个耦合端的三个或更多个节点，以及用于接收单个调制器切换信号输入的调制器开关。 方法可以包括用于形成和操作这些电路的那些。 公开了附加装置，系统和方法。

    Multiple RF-port modulator for RFID tag
    8.
    发明授权
    Multiple RF-port modulator for RFID tag 有权
    用于RFID标签的多个RF端口调制器

    公开(公告)号：US08294582B1

    公开(公告)日：2012-10-23

    申请号：US12567520

    申请日：2009-09-25

    申请人： Todd E. Humes ,  Ronald A. Oliver

    发明人： Todd E. Humes ,  Ronald A. Oliver

    IPC分类号： G08B13/14 ,  H01L21/336 ,  H01L21/8234

    CPC分类号： H01L21/823425 ,  G06K19/0723 ,  H01L27/088

    摘要： Apparatus and systems may include integrated circuits for use with Radio Frequency Identification (RFID) tags having an antenna structure with at least three coupling ends. The integrated circuits may include three or more nodes corresponding respectively to the at least three coupling ends, and a modulator switch to receive a single modulator switching signal input. Methods may include those used to form and operate such circuits. Additional apparatus, systems, and methods are disclosed.

    摘要翻译： 设备和系统可以包括与具有至少三个耦合端的天线结构的射频识别（RFID）标签一起使用的集成电路。 集成电路可以包括分别对应于至少三个耦合端的三个或更多个节点，以及用于接收单个调制器切换信号输入的调制器开关。 方法可以包括用于形成和操作这些电路的那些。 公开了附加装置，系统和方法。