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    HIGH PURITY TUNGSTEN PENTACHLORIDE AND PRODUCTION METHOD THEREOF
    2.
    发明申请
    HIGH PURITY TUNGSTEN PENTACHLORIDE AND PRODUCTION METHOD THEREOF 审中-公开

    公开(公告)号：US20190233301A1

    公开(公告)日：2019-08-01

    申请号：US16338020

    申请日：2017-10-06

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi

    IPC分类号： C01G41/04

    CPC分类号： C01G41/04

    摘要： Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachloride at a molar ratio of 1.0:2.0 to 1.0:5.0 (reducing agent/WCl6 ratio) in an inert atmosphere to obtain a mixture, heating and reducing the mixture for 1 to 100 hours in a temperature range in which a chloride of tungsten and the reducing agent becomes a liquid phase to obtain a reduced product, heating the reduced product for 1 to 100 hours at 100 Pa or less and in a temperature range of 90 to 130° C., and performing reduced-pressure distillation thereto to obtain a reduced-pressure distilled product, heating and sublimating the reduced-pressure distilled product for 1 to 100 hours at 100 Pa or less and in a temperature range of 130 to 170° C., and performing sublimation purification of achieving precipitation at 70 to 120° C.

    MOLYBDENUM OXYCHLORIDE OR TUNGSTEN OXYCHLORIDE AND PRODUCTION METHOD THEREOF
    4.
    发明申请
    MOLYBDENUM OXYCHLORIDE OR TUNGSTEN OXYCHLORIDE AND PRODUCTION METHOD THEREOF 有权

    公开(公告)号：US20210053839A1

    公开(公告)日：2021-02-25

    申请号：US16979021

    申请日：2019-07-24

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi

    IPC分类号： C01G41/00 ,  C01G39/00

    摘要： A molybdenum oxychloride or a tungsten oxychloride, wherein the molybdenum oxychloride or the tungsten oxychloride has a moisture content of less than 1 wt %. A method of producing a molybdenum oxychloride or a tungsten oxychloride, wherein a molybdenum oxide or a tungsten oxide as a raw material is subject to dehydration treatment at 400° C. or higher and 800° C. or less, and the raw material that underwent dehydration treatment is thereafter reacted with a chlorine gas to synthesize a molybdenum oxychloride or a tungsten oxychloride. An object of the present invention is to provide a molybdenum oxychloride or a tungsten oxychloride having a low moisture content, as well as a production method thereof.

    Anhydrous nickel chloride and method for producing the same
    6.
    发明授权
    Anhydrous nickel chloride and method for producing the same 有权

    公开(公告)号：US10882757B2

    公开(公告)日：2021-01-05

    申请号：US15753126

    申请日：2017-01-13

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi ,  Kouichi Takemoto

    IPC分类号： C01G53/09 ,  C25B1/26 ,  H01L21/285 ,  C23C16/455 ,  C23C16/14

    摘要： Provided is anhydrous nickel chloride having a total content of impurity elements other than gas components of less than 10 wt. ppm; each content of boron, sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, manganese, iron, copper, zinc, arsenic, silver, cadmium, indium, tin, thallium and lead of less than 1 wt. ppm, which can be produced by a method for producing anhydrous nickel chloride comprising the steps of carrying out ion exchange membrane electrolysis in an anolyte and a catholyte separated by an anion exchange membrane using raw metal nickel as an anode, a conductive material as a cathode and high purity hydrochloric acid as an electrolytic solution, to obtain a nickel chloride solution as the anolyte; concentrating the obtained nickel chloride solution by heating it at 80 to 100° C. under atmospheric pressure to obtain a concentrated nickel chloride solution; and dehydrating and drying the resulting concentrated nickel chloride solution by heating it at 180 to 220° C. under atmospheric pressure to obtain anhydrous nickel chloride.

    High purity tungsten pentachloride and production method thereof
    8.
    发明授权
    High purity tungsten pentachloride and production method thereof 有权

    公开(公告)号：US11427479B2

    公开(公告)日：2022-08-30

    申请号：US16338020

    申请日：2017-10-06

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi

    IPC分类号： C01G41/04

    摘要： Provided are high purity tungsten pentachloride, and a method for obtaining such high purity tungsten pentachloride at a high yield and in an efficient manner. Tungsten pentachloride in which a total content of metal impurities excluding Sb, Ti, and As is less than 10 wtppm is obtained by uniformly mixing one or more types of reducing agents selected from Sb, Ti, and As and tungsten hexachloride at a molar ratio of 1.0:2.0 to 1.0:5.0 (reducing agent/WCl6 ratio) in an inert atmosphere to obtain a mixture, heating and reducing the mixture for 1 to 100 hours in a temperature range in which a chloride of tungsten and the reducing agent becomes a liquid phase to obtain a reduced product, heating the reduced product for 1 to 100 hours at 100 Pa or less and in a temperature range of 90 to 130° C., and performing reduced-pressure distillation thereto to obtain a reduced-pressure distilled product, heating and sublimating the reduced-pressure distilled product for 1 to 100 hours at 100 Pa or less and in a temperature range of 130 to 170° C., and performing sublimation purification of achieving precipitation at 70 to 120° C.

    METHOD OF PRODUCING HIGH BULK DENSITY MOLYBDENUM OXYCHLORIDE
    9.
    发明申请
    METHOD OF PRODUCING HIGH BULK DENSITY MOLYBDENUM OXYCHLORIDE 有权

    公开(公告)号：US20210009436A1

    公开(公告)日：2021-01-14

    申请号：US16955547

    申请日：2019-04-12

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi

    IPC分类号： C01G39/00

    摘要： Provided is a method of producing a high purity molybdenum oxychloride by including means of sublimating and reaggregating a raw material molybdenum oxychloride in a reduced-pressure atmosphere, or means of retaining a gaseous raw material molybdenum oxychloride, which was synthesized in a vapor phase, in a certain temperature range, and thereby growing crystals to obtain a higher purity molybdenum oxychloride having a high bulk density and high hygroscopicity resistance.

    Sb-Te-Based Alloy Sintered Compact Sputtering Target
    10.
    发明申请
    Sb-Te-Based Alloy Sintered Compact Sputtering Target 审中-公开

    公开(公告)号：US20200017955A1

    公开(公告)日：2020-01-16

    申请号：US16522876

    申请日：2019-07-26

    申请人： JX Nippon Mining & Metals Corporation

    发明人： Hideyuki Takahashi ,  Yoshimasa Koido

    IPC分类号： C23C14/34 ,  C23C14/06 ,  C22C1/04 ,  C04B35/547 ,  C22C12/00 ,  C04B35/626 ,  C22C28/00 ,  C04B35/645 ,  G11B7/26

    摘要： An Sb—Te-based alloy sintered compact sputtering target having Sb and Te as main components and which contains 0.1 to 30 at % of carbon or boron and comprises a uniform mixed structure of Sb—Te-based alloy particles and fine carbon (C) or boron (B) particles is provided. An average grain size of the Sb—Te-based alloy particles is 3 μm or less and a standard deviation thereof is less than 1.00. An average grain size of the C or B particles is 0.5 μm or less and a standard deviation thereof is less than 0.20. When the average grain size of the Sb—Te-based alloy particles is X and the average grain size of the carbon or boron particles is Y, Y/X is within a range of 0.1 to 0.5. This provides an improved Sb—Te-based alloy sputtering target that inhibits generation of cracks in the sintered target and prevents generation of arcing during sputtering.