公开(公告)号：US20240071984A1

公开(公告)日：2024-02-29

申请号：US17894105

申请日：2022-08-23

Applicant: Tokyo Electron Limited

Inventor： Kandabara Tapily ,  Soo Doo Chae ,  Satohiko Hoshino ,  Hojin Kim ,  Adam Gildea

IPC: H01L23/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

CPC classification number: H01L24/80 ,  C23C16/403 ,  C23C16/45536 ,  C23C16/56 ,  H01L2224/80011 ,  H01L2224/8002 ,  H01L2224/80236 ,  H01L2224/80379 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Devices and methods for forming semiconductor devices are disclosed. The semiconductor device can include a plurality of semiconductor wafers. The plurality of semiconductor wafers can have a dielectric bonding layer disposed thereupon. The dielectric bonding layers can be treated to increase a bonding energy with other semiconductor wafers. A wafer having a treatment applied to a bonding layer can be bonded to another wafer.

公开(公告)号：US20230075263A1

公开(公告)日：2023-03-09

申请号：US17863594

申请日：2022-07-13

Applicant: Tokyo Electron Limited

Inventor： Soo Doo Chae ,  Sang Cheol Han ,  Hojin Kim ,  Kandabara Tapily ,  Satohiko Hoshino ,  Adam Gildea ,  Gerrit Leusink

IPC: H01L23/00

Abstract: A semiconductor package is disclosed. The semiconductor package includes a first substrate including a first interconnect structure and a first bonding layer adjacent the first interconnect structure. The semiconductor package includes a second substrate including a second interconnect structure and a second bonding layer adjacent the second interconnect structure. The first bonding layer and second bonding layer each include a metal oxide.