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1.发明授权System and methods for spin-on coating of self-assembled monolayers or periodic organosilicates on a substrate 有权自组装单层或周期性有机硅酸盐在基材上旋涂的系统和方法公开(公告)号：US09418834B2
公开(公告)日：2016-08-16
申请号：US14570865
申请日：2014-12-15
IPC分类号： H01L21/027 , H01L21/02 , H01L21/3105
CPC分类号： H01L21/02126 , H01L21/02343 , H01L21/02359 , H01L21/3105
摘要： This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.
摘要翻译： 本公开涉及一种用分子自组装（MSA）化学品旋涂底物以在衬底上形成光致抗蚀剂膜和/或低介电常数（低k）膜的处理系统。 旋涂处理系统可以包括可以将MSA化学品接收和旋涂到基材上的旋涂室，以及在旋涂之后对基材进行热处理的退火室。 在某些实施方案中，旋涂处理系统还可以在旋涂过程之前对基材进行预处理或预润湿。
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公开(公告)号：US11915973B2
公开(公告)日：2024-02-27
申请号：US17115231
申请日：2020-12-08
IPC分类号： H01L21/768 , H01L21/02 , H01L21/687
CPC分类号： H01L21/76834 , H01L21/02164 , H01L21/02282 , H01L21/02301 , H01L21/02318 , H01L21/68764
摘要： A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.
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3.发明申请SYSTEM AND METHODS FOR SPIN-ON COATING OF SELF-ASSEMBLED MONOLAYERS OR PERIODIC ORGANOSILICATES ON A SUBSTRATE 有权自组装单层或周期性有机酸在基材上旋涂的系统和方法公开(公告)号：US20150170903A1
公开(公告)日：2015-06-18
申请号：US14570865
申请日：2014-12-15
IPC分类号： H01L21/027
CPC分类号： H01L21/02126 , H01L21/02343 , H01L21/02359 , H01L21/3105
摘要： This disclosure relates to a processing system for spin-coating a substrate with Molecular Self-assembly (MSA) chemicals to form photoresist films and/or low dielectric constant (low-k) films on the substrate. The spin-coating processing system may include a spin-coating chamber that can receive and spin-coat MSA chemicals onto the substrate and an annealing chamber to thermally treat the substrate after the spin-coat process. In certain embodiments, the spin-coating processing system may also pre-treat or pre-wet the substrate prior to the spin-coating process.
摘要翻译： 本公开涉及一种用分子自组装（MSA）化学品旋涂底物以在衬底上形成光致抗蚀剂膜和/或低介电常数（低k）膜的处理系统。 旋涂处理系统可以包括可以将MSA化学品接收和旋涂到基材上的旋涂室，以及在旋涂之后对基材进行热处理的退火室。 在某些实施方案中，旋涂处理系统还可以在旋涂过程之前对基材进行预处理或预润湿。
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公开(公告)号：US20210175118A1
公开(公告)日：2021-06-10
申请号：US17115231
申请日：2020-12-08
IPC分类号： H01L21/768 , H01L21/02 , H01L21/687
摘要： A substrate processing method includes providing a substrate containing a metal surface and a dielectric material surface, selectively forming a sacrificial capping layer containing a self-assembled monolayer on the metal surface, removing the sacrificial capping layer to restore the metal surface, and processing the restored metal surface and the dielectric material surface. The sacrificial capping layer may be used to prevent metal diffusion into the dielectric material and to prevent oxidation and contamination of the metal surface while waiting for further processing of the substrate.
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