公开(公告)号：US11866831B2

公开(公告)日：2024-01-09

申请号：US17725072

申请日：2022-04-20

Applicant: Tokyo Electron Limited

Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

IPC: C23F1/18 ,  H01L21/306 ,  C23G1/10 ,  H01L21/3213 ,  C23F1/34 ,  C23G5/028

CPC classification number: C23F1/18 ,  C23F1/34 ,  C23G1/103 ,  H01L21/30604 ,  H01L21/32134 ,  C23G5/02867

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

公开(公告)号：US20230140900A1

公开(公告)日：2023-05-11

申请号：US17725072

申请日：2022-04-20

Applicant: Tokyo Electron Limited

Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

IPC: C23F1/18

CPC classification number: C23F1/18

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.