公开(公告)号：US20240258169A1

公开(公告)日：2024-08-01

申请号：US18104272

申请日：2023-01-31

Applicant: Tokyo Electron Limited

Inventor： Soo Doo Chae ,  Arkalgud Sitaram

IPC: H01L21/768 ,  H01L21/8234 ,  H01L23/48

CPC classification number: H01L21/76898 ,  H01L21/823475 ,  H01L23/481

Abstract: A method for fabricating semiconductor devices is disclosed. The method includes forming a stack on a first substrate. A laser liftoff layer is interposed between the stack and the first substrate. The method includes forming a plurality of first interconnect structures over a first side of the stack. The method includes attaching a second substrate to the stack on the first side, with the plurality of first interconnect structures interposed between the stack and the second substrate; removing the first substrate by applying radiation on the laser liftoff layer. The method includes forming a plurality of second interconnect structures on a second side of the stack opposite to the first side.

公开(公告)号：US11866831B2

公开(公告)日：2024-01-09

申请号：US17725072

申请日：2022-04-20

Applicant: Tokyo Electron Limited

Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

IPC: C23F1/18 ,  H01L21/306 ,  C23G1/10 ,  H01L21/3213 ,  C23F1/34 ,  C23G5/028

CPC classification number: C23F1/18 ,  C23F1/34 ,  C23G1/103 ,  H01L21/30604 ,  H01L21/32134 ,  C23G5/02867

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

公开(公告)号：US20230140900A1

公开(公告)日：2023-05-11

申请号：US17725072

申请日：2022-04-20

Applicant: Tokyo Electron Limited

Inventor： Christopher Netzband ,  Paul Abel ,  Jacques Faguet ,  Arkalgud Sitaram

IPC: C23F1/18

CPC classification number: C23F1/18

Abstract: The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

公开(公告)号：US20240243006A1

公开(公告)日：2024-07-18

申请号：US18388564

申请日：2023-11-10

Applicant: Tokyo Electron Limited

Inventor： Scott Lefevre ,  Arkalgud Sitaram ,  Kevin Ryan ,  Ilseok Son ,  Panupong Jaipan

IPC: H01L21/762 ,  H01L21/321

CPC classification number: H01L21/76251 ,  H01L21/3212 ,  H01L21/76243

Abstract: In some implementations, a method may include providing a silicon on insulator (SOI) substrate having a first semiconductor layer, a buried oxide layer over the first semiconductor region, and a second semiconductor region over the buried oxide, the second semiconductor region having a plurality of recesses exposing the underlying buried oxide, each recess having a shape and size configured to accommodate a die. In addition, the device may include bonding a plurality of semiconductor dies to the buried oxide through the plurality of recesses.