公开(公告)号：US11087973B2

公开(公告)日：2021-08-10

申请号：US15843344

申请日：2017-12-15

申请人： Tokyo Electron Limited

发明人： Yannick Feurprier ,  Doni Parnell

IPC分类号： H01L21/02 ,  H01L21/3105 ,  H01L21/768

摘要： Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.

公开(公告)号：US10319905B2

公开(公告)日：2019-06-11

申请号：US14594378

申请日：2015-01-12

申请人： Tokyo Electron Limited

发明人： David F. Hurley ,  Doni Parnell ,  Shigeru Tahara ,  Toru Ishii

IPC分类号： H01L43/12

摘要： A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.

公开(公告)号：US20180174897A1

公开(公告)日：2018-06-21

申请号：US15843344

申请日：2017-12-15

申请人： Tokyo Electron Limited

发明人： Yannick Feurprier ,  Doni Parnell

IPC分类号： H01L21/768 ,  H01L21/02

CPC分类号： H01L21/76826 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02203 ,  H01L21/02252 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/76831 ,  H01L21/76877

摘要： Embodiments of the invention address several issues and problems associated with etching of dielectric materials for BEOL applications. According to one embodiment, the method includes providing a patterned substrate containing a dielectric material, exposing the substrate to a gas phase plasma to functionalize a surface of the dielectric material, exposing the substrate to a silanizing reagent that reacts with the functionalized surface of the dielectric material to form a dielectric film, and sequentially repeating the exposing steps at least once to increase a thickness of the dielectric film. According to one embodiment, the dielectric material may be a porous low-k material, and the dielectric film seals the pores on a surface of the porous low-k material.

公开(公告)号：US20150214473A1

公开(公告)日：2015-07-30

申请号：US14594378

申请日：2015-01-12

申请人： Tokyo Electron Limited

发明人： David F. Hurley ,  Doni Parnell ,  Shigeru Tahara ,  Toru Ishii

IPC分类号： H01L43/12

CPC分类号： H01L43/12

摘要： A method for performing post-etch annealing of a workpiece in an annealing system is described. In particular, the method includes disposing one or more workpieces in an annealing system, each of the one or more workpieces having a multilayer stack of thin films that has been patterned using an etching process sequence to form an electronic device characterized by a cell critical dimension (CD), wherein the multilayer stack of thin films includes at least one patterned layer containing magnetic material. Thereafter, the patterned layer containing magnetic material on the one or more workpieces is annealed in the annealing system via an anneal process condition, wherein the anneal process condition is selected to adjust a property of the patterned layer containing magnetic material.

摘要翻译： 描述了在退火系统中对工件进行蚀刻后退火的方法。 特别地，该方法包括在退火系统中布置一个或多个工件，一个或多个工件中的每一个具有多层薄膜，其已经使用蚀刻工艺顺序图案化以形成电子器件，其特征在于电池临界尺寸 （CD），其中所述多层薄膜包括至少一个包含磁性材料的图案层。 此后，在一个或多个工件上包含磁性材料的图案层通过退火工艺条件在退火系统中进行退火，其中选择退火工艺条件以调整含有磁性材料的图案化层的性质。