公开(公告)号：US11616194B2

公开(公告)日：2023-03-28

申请号：US17040483

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ken Ando ,  Hiroki Maehara ,  Jun Sato ,  Kiyoshi Maeda ,  Shigeru Tahara

IPC: H01L43/08 ,  H01L43/12

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

公开(公告)号：US10566525B2

公开(公告)日：2020-02-18

申请号：US16008659

申请日：2018-06-14

Applicant: Tokyo Electron Limited

Inventor： Hiroki Maehara ,  Naoki Watanabe ,  Kanto Nakamura

IPC: H01L43/12 ,  H01L43/10

Abstract: A method for manufacturing a magnetoresistive element, includes: a first step of preparing a wafer including a first ferromagnetic layer and a first oxide layer provided directly on the first ferromagnetic layer; a second step of forming, after the first step, a second ferromagnetic layer directly on the first oxide layer; a third step of forming, after the second step, an absorbing layer directly on the second ferromagnetic layer; and a fourth step of crystallizing, after the third step, the second ferromagnetic layer by heat treatment. The second ferromagnetic layer contains boron, and the absorbing layer contains a material for absorbing boron from the second ferromagnetic layer by the heat treatment in the fourth step.

公开(公告)号：US20230051311A1

公开(公告)日：2023-02-16

申请号：US17884371

申请日：2022-08-09

Applicant: Tokyo Electron Limited

Inventor： Hiroaki Niimi ,  Gerrit Leusink ,  Hiroki Maehara ,  Einstein Noel Abarra ,  Naoki Watanabe

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522

Abstract: A method of forming a metal superlattice structure includes depositing, on a substrate, a layer of a first metal with face-centered-cubic (fcc) crystal structure. The method further includes depositing a layer of ruthenium (Ru) metal with fcc crystal structure on the layer of the first metal. The layer of the first metal may cause the layer of ruthenium metal to have fcc crystal structure.