公开(公告)号：US10020172B2

公开(公告)日：2018-07-10

申请号：US14721090

申请日：2015-05-26

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Ohata ,  Hidetoshi Kimura ,  Kiyoshi Maeda ,  Jun Hirose ,  Tsuyoshi Hida

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/52

CPC classification number: H01J37/32642 ,  C23C16/52 ,  H01J37/32091 ,  H01L21/67069 ,  H01L21/68735

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

公开(公告)号：US20150255255A1

公开(公告)日：2015-09-10

申请号：US14721090

申请日：2015-05-26

Applicant: Tokyo Electron Limited

Inventor： Mitsunori Ohata ,  Hidetoshi Kimura ,  Kiyoshi Maeda ,  Jun Hirose ,  Tsuyoshi Hida

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/52

CPC classification number: H01J37/32642 ,  C23C16/52 ,  H01J37/32091 ,  H01L21/67069 ,  H01L21/68735

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

Abstract translation: 提供了一种包括基座的等离子体处理装置，具有用于安装基板的基板安装部分; 包括外圈和内圈的聚焦环; 介电环; 用于改变介电环的介电常数的介电常数可变装置; 位于所述电介质环外侧的接地体，与所述聚焦环的底面间隔开间隙; 以及控制器，用于通过控制从基座流到基板的电流来控制聚焦环的顶表面电位。

公开(公告)号：US11616194B2

公开(公告)日：2023-03-28

申请号：US17040483

申请日：2019-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Ken Ando ,  Hiroki Maehara ,  Jun Sato ,  Kiyoshi Maeda ,  Shigeru Tahara

IPC: H01L43/08 ,  H01L43/12

Abstract: An etching method includes: preparing a workpiece including a metal multilayer film having a magnetic tunnel junction and a mask formed by an inorganic material on the metal multilayer film; and etching the metal multilayer film by plasma of a mixed gas of ethylene gas and oxygen gas using the mask.

公开(公告)号：US10685816B2

公开(公告)日：2020-06-16

申请号：US15775218

申请日：2016-11-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro Umezawa ,  Jun Sato ,  Kiyoshi Maeda ,  Mitsunori Ohata ,  Kazuya Matsumoto

IPC: H01J37/32 ,  C23F4/00 ,  H01L43/12 ,  H01F41/34 ,  H01F10/32 ,  G11C11/16 ,  H01L43/02 ,  H01L43/10 ,  H01F41/30

Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(φ, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value φ of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.