公开(公告)号：US20170372916A1

公开(公告)日：2017-12-28

申请号：US15625165

申请日：2017-06-16

Applicant: Tokyo Electron Limited

Inventor： Jin KUDO ,  Wataru TAKAYAMA ,  Maju TOMURA

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: An etching process method is provided that includes outputting a first high frequency power from a first high frequency power supply in a cryogenic temperature environment where the temperature of a substrate is controlled to be less than or equal to −35° C., supplying a sulfur fluoride-containing gas and a hydrogen-containing gas, generating a plasma from the supplied sulfur fluoride-containing gas and hydrogen-containing gas, and etching a laminated film made up of laminated layers of silicon-containing films having different compositions with the generated plasma.

公开(公告)号：US20170358460A1

公开(公告)日：2017-12-14

申请号：US15618557

申请日：2017-06-09

Applicant: Tokyo Electron Limited

Inventor： Maju TOMURA ,  Jin KUDO ,  Yoshinobu OHYA

IPC: H01L21/311 ,  H01J37/32 ,  H01L21/67 ,  H01L27/11551 ,  H01L27/11578

Abstract: An etching process method is provided that includes outputting a first high frequency power of a first frequency from a first high frequency power supply, and outputting a second high frequency power of a second frequency, which is lower than the first high frequency, from a second high frequency power supply in an cryogenic temperature environment where a substrate temperature is controlled to be less than or equal to −35° C.; generating a plasma by adding a hydrocarbon gas containing at least 3 carbon atoms to an etching gas containing carbon, hydrogen, and fluorine; and etching a silicon oxide film or a laminated film made up of laminated layers of silicon-containing films having different compositions using the generated plasma.

公开(公告)号：US20130267094A1

公开(公告)日：2013-10-10

申请号：US13854412

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takayuki KATSUNUMA ,  Masanobu HONDA ,  Hironobu ICHIKAWA ,  Jin KUDO

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32669 ,  H01J2237/334 ,  H01L21/0276 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069

Abstract: A plasma etching method for plasma etching, in a processing chamber, an antireflection film laminated on an organic film formed on a substrate by using an etching mask made of a resist film formed on the antireflection film, the plasma etching method includes: depositing a Si-containing compound on the etching mask made of the resist film by using plasma of Si-containing gas in the processing chamber; and etching the antireflection film in a state where the Si-containing compound is deposited on the etching mask.

Abstract translation: 一种用于等离子体蚀刻的等离子体蚀刻方法，在处理室中，通过使用由形成在防反射膜上的抗蚀剂膜制成的蚀刻掩模层叠在形成于基板上的有机膜上的抗反射膜，所述等离子体蚀刻方法包括： 通过在处理室中使用含Si气体的等离子体，在由抗蚀剂膜制成的蚀刻掩模上形成化合物; 并且在含有Si的化合物沉积在蚀刻掩模上的状态下蚀刻抗反射膜。