SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230257877A1

    公开(公告)日:2023-08-17

    申请号:US18163949

    申请日:2023-02-03

    CPC classification number: C23C16/4412 C23C16/4584

    Abstract: A substrate processing apparatus includes: a processing chamber; a rotary table rotatably provided inside the processing chamber; a stage that is rotatable relative to the rotary table at a position spaced apart from a rotation center of the rotary table; a process gas supplier provided above the rotary table; a separation gas supplier to supply a separation gas to separation regions, each of the separation regions being adjacent to a processing region; and a gas exhauster including exhaust ports communicating with an inside of the processing chamber, wherein the exhaust ports are provided in the processing region between the separation regions and are provided above the rotary table.

    SUBSTRATE PROCESSING APPARATUS
    2.
    发明公开

    公开(公告)号:US20240060181A1

    公开(公告)日:2024-02-22

    申请号:US18363993

    申请日:2023-08-02

    CPC classification number: C23C16/4581 H01L21/68764 H01L21/68771

    Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table in the vacuum chamber, a stage, and a support that supports at least either the rotary table or stage, the support having a thermal expansion coefficient greater than the rotary table or stage that is supported. The rotary table or stage includes a protruding portion protruding toward the support. The support includes a base portion, an insertion portion protruding from a center of the base portion and being inserted into the protruding portion, and an outer edge protruding portion protruding from the base portion. An outer clearance formed between the outer edge protruding portion and the protruding portion is set to be smaller than an inner clearance formed between the insertion portion and the protruding portion at a first temperature, and the outer clearance becomes greater than the inner clearance at a second temperature higher than the first temperature.

    SUBSTRATE PROCESSING APPARATUS
    4.
    发明申请

    公开(公告)号:US20220130712A1

    公开(公告)日:2022-04-28

    申请号:US17502615

    申请日:2021-10-15

    Abstract: A substrate processing apparatus includes: a rotary table provided inside a processing container; a stage provided on an upper surface of the rotary table in order to mount a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate mounted on the stage; and a rotation shaft provided at a location that rotates together with the rotary table to freely rotate while supporting the stage, and including a low heat conductivity body formed of a material with a heat conductivity lower than that of the stage.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明申请

    公开(公告)号:US20210217651A1

    公开(公告)日:2021-07-15

    申请号:US17128628

    申请日:2020-12-21

    Abstract: A substrate processing apparatus includes a vacuum chamber, a rotary table that is rotatably provided inside the vacuum chamber, a stage that is rotatable with respect to the rotary table, the stage having a center of rotation at a position spaced apart from a center of rotation of the rotary table, and the stage having a flange provided at a lower surface of the stage, a first holder and a second holder, the flange being sandwiched between the first holder and the second holder, and a pressing member configured to press the second holder in a direction in which the second holder comes closer to the first holder.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE MAP GENERATING METHOD

    公开(公告)号:US20250046646A1

    公开(公告)日:2025-02-06

    申请号:US18782696

    申请日:2024-07-24

    Abstract: A substrate processing apparatus includes a vacuum container, a rotary table provided inside the vacuum container, stages provided along a circumferential direction of the rotary table, and configured to support respective substrates disposed thereon, and a measuring instrument configured to measure characteristics of at least one substrate among the substrates disposed on the stages, wherein the stages are configured to be rotatable relative to the rotary table, wherein the measuring instrument is provided on a circumference of a circle that is centered on a central axis of the rotary table and passes through the stages in a plan view seen from a direction perpendicular to an upper surface of the rotary table.

    SUBSTRATE PROCESSING APPARATUS
    8.
    发明申请

    公开(公告)号:US20230061423A1

    公开(公告)日:2023-03-02

    申请号:US17820076

    申请日:2022-08-16

    Abstract: A substrate processing apparatus includes a processing chamber configured to process a substrate by using a processing gas; a rotary table that is rotatably provided in the processing chamber; a stage on which the substrate is to be placed and that is configured to be rotatable relative to the rotary table at a position spaced apart from a center of rotation of the rotary table, a lift pin configured to be displaced relative to the stage to raise and lower the substrate; and a housing configured to house the lift pin when the lift pin is not unexposed from the stage. The lift pin and the housing have a closing structure that closes a gap between the lift pin and the housing.

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