公开(公告)号：US20220199463A1

公开(公告)日：2022-06-23

申请号：US17654838

申请日：2022-03-15

申请人： Tokyo Electron Limited

发明人： Shimpei YAMAGUCHI ,  Kiyotaka IMAI ,  Atsushi TSUBOI

IPC分类号： H01L21/768 ,  H01L23/522

摘要： A method of manufacturing a semiconductor device includes: forming a first film containing carbon over a silicon nitride film and a first conductive film; forming a first silicon oxide film surrounding the first film over the silicon nitride film and the first conductive film; removing the first film to form, in the first silicon oxide film, a first opening that exposes at least a part of the silicon nitride film and at least a part of the first conductive film; and forming a second conductive film on and in contact with the first conductive film in the first opening.

公开(公告)号：US20210376123A1

公开(公告)日：2021-12-02

申请号：US17329178

申请日：2021-05-25

申请人： Tokyo Electron Limited

发明人： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masanobu IGETA ,  Masaru SUGIMOTO ,  Luis FERNANDEZ

IPC分类号： H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02

摘要： A method including depositing a dielectric film on a substrate including stacked structures with recessed portions formed on side surfaces of each of the stacked structures, wherein the dielectric film is deposited so that the stacked structures are covered at a thickness which is equal to or less than half a width of the recessed portions; filling a trench or trenches that are located between the stacked structures with a sacrificial film; etching the sacrificial film along the stacked structures; etching the dielectric film so that the dielectric film is etched more than the sacrificial film; removing the sacrificial film; after the removing of the sacrificial film, depositing a dielectric film to a thickness equal to or less than half the width of the recessed portions; and etching the deposited dielectric film, on a condition that the deposited dielectric film remains in the recessed portions.

公开(公告)号：US20210375684A1

公开(公告)日：2021-12-02

申请号：US17329153

申请日：2021-05-25

申请人： Tokyo Electron Limited

发明人： Shimpei YAMAGUCHI ,  Atsushi TSUBOI ,  Atsushi ENDO ,  Masaru SUGIMOTO ,  Hiroshi YANO ,  Yasushi KODASHIMA ,  Masanobu IGETA

IPC分类号： H01L21/8234 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66

摘要： A method for manufacturing a semiconductor device includes forming a support on a side surface of a stack that extends from a substrate. The stack includes a second sacrificial film, plural first sacrificial films and plural silicon (Si)-containing films, wherein one first sacrificial film of the plural sacrificial films is stacked upon the second sacrificial film and the plural sacrificial films and the plural Si-containing films are alternately stacked upon one another, and at least a side of the second sacrificial film is not covered by the support, the one first sacrificial film and the substrate. The method further includes removing the second sacrificial film from the stack to form a space between the substrate and the one first sacrificial film and adjacent to the support, and filling the space with a dielectric film.