公开(公告)号：US20250087455A1

公开(公告)日：2025-03-13

申请号：US18956002

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI ,  Shota YAMAZAKI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes a step (a) of providing a substrate, the substrate including a first film and a second film having an opening on the first film, the first film containing a metallic element and a non-metallic element, a step (b) of forming a protective film on a sidewall of a recess formed in the first film corresponding to the opening, and a step (c) of etching the first film through the opening with a plasma generated from a processing gas including a halogen-containing gas at the same time as or after the step (b).

公开(公告)号：US20250087454A1

公开(公告)日：2025-03-13

申请号：US18955997

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).

公开(公告)号：US20140251945A1

公开(公告)日：2014-09-11

申请号：US14196376

申请日：2014-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiichi NISHIMURA ,  Fumiko YAMASHITA ,  Koyumi SASA

IPC: C23F1/12

CPC classification number: C23F4/00 ,  H01L21/02071 ,  H01L21/32136 ,  H05K3/027 ,  H05K2203/087 ,  H05K2203/092 ,  H05K2203/095 ,  H05K2203/1388 ,  H05K2203/1484 ,  H05K2203/1492 ,  H05K2203/1509

Abstract: In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma.

Abstract translation: 在蚀刻待处理物体的金属层的方法中，通过离子溅射蚀刻蚀刻金属层，同时在物体的掩模的表面上形成含有碳的保护膜。 在蚀刻金属层之后，将该物体暴露于氧等离子体。 在将物体暴露于氧等离子体之后，该物体暴露于六氟乙酰丙酮。