公开(公告)号：US20180233331A1

公开(公告)日：2018-08-16

申请号：US15896435

申请日：2018-02-14

Applicant: Tokyo Electron Limited

Inventor： Masanori HOSOYA ,  Soichiro KIMURA ,  Shinya MORIKITA

IPC: H01J37/32 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455

CPC classification number: H01J37/32183 ,  C23C16/26 ,  C23C16/4405 ,  C23C16/45523 ,  C23C16/509 ,  H01J37/32449 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/31116 ,  H01L21/768 ,  H01L21/76897

Abstract: A plasma processing method is provided that includes applying a radio frequency power to an upper electrode of a chamber, and performing a coating process by supplying a coating gas, including a carbon-containing gas, to an interior of the chamber to generate a plasma from the supplied coating gas, and coating the interior of the chamber with a carbon film using the plasma generated from the coating gas. The plasma processing method further includes performing an etching process after the coating process by supplying an etching gas, including a fluorocarbon-containing gas, to the interior of the chamber to generate a plasma from the supplied etching gas and etching a first silicon-containing film that is arranged on a second silicon-containing film covering an electrode formed on a workpiece using the plasma generated from the etching gas.

公开(公告)号：US20250087455A1

公开(公告)日：2025-03-13

申请号：US18956002

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI ,  Shota YAMAZAKI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes a step (a) of providing a substrate, the substrate including a first film and a second film having an opening on the first film, the first film containing a metallic element and a non-metallic element, a step (b) of forming a protective film on a sidewall of a recess formed in the first film corresponding to the opening, and a step (c) of etching the first film through the opening with a plasma generated from a processing gas including a halogen-containing gas at the same time as or after the step (b).

公开(公告)号：US20250087454A1

公开(公告)日：2025-03-13

申请号：US18955997

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).

公开(公告)号：US20160379841A1

公开(公告)日：2016-12-29

申请号：US15184049

申请日：2016-06-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akira HIDAKA ,  Soichiro KIMURA ,  Masaru SUGIMOTO

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/76897 ,  H01L2221/1063

Abstract: Disclosed is a method for selectively etching a first region made of silicon oxide to a second region made of silicon nitride. The method includes: performing a first sequence once or more to etch the first region; and performing a second sequence once or more to further etch the first region. The first sequence includes: a first step of generating plasma of a processing gas containing a fluorocarbon to form a fluorocarbon-containing deposit on a workpiece; and a second step of etching the first region by radicals of the fluorocarbon. The second sequence includes: a third step of generating plasma of a processing gas containing a fluorocarbon gas to form a fluorocarbon-containing deposit on a workpiece; and a fourth step of generating plasma of a processing gas containing oxygen gas and an inert gas in the processing container.

Abstract translation: 公开了一种用于将由氧化硅制成的第一区域选择性蚀刻到由氮化硅制成的第二区域的方法。 该方法包括：执行一次或多次第一序列以蚀刻第一区域; 以及执行一次或多次的第二序列以进一步蚀刻所述第一区域。 第一序列包括：产生含有碳氟化合物的处理气体的等离子体以在工件上形成含氟烃沉积物的第一步骤; 以及通过氟碳化合物的自由基蚀刻第一区域的第二步骤。 第二序列包括：产生含有碳氟化合物气体的处理气体的等离子体以在工件上形成含氟烃沉积物的第三步骤; 以及在处理容器中产生含有氧气和惰性气体的处理气体的等离子体的第四步骤。