公开(公告)号：US20160203998A1

公开(公告)日：2016-07-14

申请号：US14912652

申请日：2014-09-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Toshikatsu TOBANA ,  Fumiko YAMASHITA

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/31144 ,  B82Y40/00 ,  H01J37/32082 ,  H01J37/32192 ,  H01L21/0337 ,  H01L21/31138

Abstract: Provided is a method of etching an etching target layer of a workpiece. The method includes forming a self-assemblable block copolymer layer containing a first polymer and a second polymer on an intermediate layer formed on the etching target layer; processing the workpiece to form a first region containing the first polymer and a second region containing the second polymer, from the block copolymer layer; after the processing the workpiece, forming a mask by etching the second region and the intermediate layer just below the second region; after the forming the mask, forming a protective film on the mask by generating plasma of a processing gas containing silicon tetrachloride gas and oxygen gas within a processing container of a plasma processing apparatus that accommodates the workpiece; and after the forming the protective film, etching the etching target layer.

Abstract translation: 提供了蚀刻工件的蚀刻目标层的方法。 该方法包括在形成在蚀刻目标层上的中间层上形成含有第一聚合物和第二聚合物的自组装嵌段共聚物层; 处理所述工件以从所述嵌段共聚物层形成含有所述第一聚合物的第一区域和包含所述第二聚合物的第二区域; 在加工工件之后，通过蚀刻第二区域和刚好在第二区域正下方的中间层来形成掩模; 在形成掩模之后，通过在容纳工件的等离子体处理装置的处理容器内产生含有四氯化硅气体和氧气的处理气体的等离子体，在掩模上形成保护膜; 并且在形成保护膜之后，蚀刻蚀刻目标层。

公开(公告)号：US20140251945A1

公开(公告)日：2014-09-11

申请号：US14196376

申请日：2014-03-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Eiichi NISHIMURA ,  Fumiko YAMASHITA ,  Koyumi SASA

IPC: C23F1/12

CPC classification number: C23F4/00 ,  H01L21/02071 ,  H01L21/32136 ,  H05K3/027 ,  H05K2203/087 ,  H05K2203/092 ,  H05K2203/095 ,  H05K2203/1388 ,  H05K2203/1484 ,  H05K2203/1492 ,  H05K2203/1509

Abstract: In a method of etching a metal layer of an object to be processed, the metal layer is etched by ion sputtering etching while forming a protective film containing carbon on a surface of a mask of the object. The object is exposed to an oxygen plasma after etching the metal layer. The object is exposed to hexafluoroacetylacetone after exposing the object to the oxygen plasma.

Abstract translation: 在蚀刻待处理物体的金属层的方法中，通过离子溅射蚀刻蚀刻金属层，同时在物体的掩模的表面上形成含有碳的保护膜。 在蚀刻金属层之后，将该物体暴露于氧等离子体。 在将物体暴露于氧等离子体之后，该物体暴露于六氟乙酰丙酮。

公开(公告)号：US20150214474A1

公开(公告)日：2015-07-30

申请号：US14616863

申请日：2015-02-09

Applicant: Tokyo Electron Limited

Inventor： Eiichi NISHIMURA ,  Akitaka SHIMIZU ,  Fumiko YAMASHITA

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  C21D8/12 ,  C21D8/1277 ,  H01J2237/334 ,  H01L43/02 ,  H01L43/08

Abstract: An etching method is provided for etching a multilayer film material that includes a metal laminated film having an insulating layer arranged between a first magnetic layer and a second magnetic layer. The etching method includes an etching step of generating a plasma by supplying a first gas to a processing chamber and etching the metal laminated film using the generated plasma. The first gas is a gas containing PF3 gas.

Abstract translation: 提供蚀刻方法来蚀刻包括具有布置在第一磁性层和第二磁性层之间的绝缘层的金属层压膜的多层膜材料。 蚀刻方法包括通过向处理室提供第一气体并使用所产生的等离子体蚀刻金属层压膜来产生等离子体的蚀刻步骤。 第一种气体是含有PF 3气体的气体。

公开(公告)号：US20150013908A1

公开(公告)日：2015-01-15

申请号：US14499341

申请日：2014-09-29

Applicant: Tokyo Electron Limited

Inventor： Eiichi NISHIMURA ,  Tadashi KOTSUGI ,  Fumiko YAMASHITA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32155 ,  H01J37/32706 ,  H01J2237/3343 ,  H01J2237/3348 ,  H01L21/0271 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/31138

Abstract: An etching apparatus includes a controller configured to control a high frequency power supply to supply a high frequency power to a mounting table for etching a polymer layer formed on a base layer placed on the mounting table, using plasma generated from a predetermined gas supplied from a gas supply source by the high frequency power, the polymer layer having a periodic pattern of a first polymer and a second polymer formed by self-assembling the first polymer and the second polymer of a block copolymer that is capable of being self-assembled, the high frequency power being set for etching the polymer layer using the generated plasma such that the second polymer is removed and a pattern of the first polymer is formed for subsequently etching the base layer using the pattern of the first polymer as a mask.

Abstract translation: 一种蚀刻装置，包括：控制器，被配置为控制高频电源，以向安装台提供高频电力，用于使用从从安装台提供的预定气体产生的等离子体产生的等离子体来蚀刻形成在安装台上的基底层上的聚合物层 通过高频功率的气体供应源，聚合物层具有第一聚合物的周期性图案和通过自组装能够自组装的嵌段共聚物的第一聚合物和第二聚合物形成的第二聚合物， 设置高频功率以使用所产生的等离子体蚀刻聚合物层，使得除去第二聚合物并形成第一聚合物的图案，用于随后使用第一聚合物的图案作为掩模蚀刻基底层。