公开(公告)号：US20150053329A1

公开(公告)日：2015-02-26

申请号：US14458309

申请日：2014-08-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Makoto KOBAYASHI

IPC: B32B37/10 ,  B32B38/18 ,  B32B37/18

CPC classification number: H01L21/67109 ,  B29C65/48 ,  B29C66/0224 ,  B29C66/432 ,  F27B17/0025 ,  F27D1/0036 ,  F27D11/10 ,  H05B3/66

Abstract: A method of manufacturing a cylindrical thermal insulation wall body having a holding unit of a heater element formed in an inner peripheral surface includes processing a plate-shaped thermal insulation member such that a plurality of groove portions are formed at a predetermined pitch, processing the thermal insulation member such that an angle between either of the first surface and the second surface, and a third surface on which the groove portions are formed, is 90+180/n degrees, and manufacturing the cylindrical thermal insulation wall body by bonding a plurality of sectional thermal insulation members, wherein the plurality of sectional thermal insulation members are bonded such that the groove portions of the adjacent sectional thermal insulation members are aligned with each other and to form the holding unit in the inner peripheral surface of the cylindrical thermal insulation wall body.

Abstract translation: 一种制造具有形成在内周面的加热元件的保持单元的圆筒形保温壁体的方法包括：处理板状绝热构件，使得以预定间距形成多个槽部，加工热 绝缘构件，使得第一表面和第二表面之间的角度以及形成有沟槽部分的第三表面之间的角度为90±180°/ n°，并且通过将多个 其中所述多个截面绝热构件被结合成使得相邻的截面绝热构件的槽部彼此对准并且在所述圆筒形保温壁体的内周面中形成保持单元 。

公开(公告)号：US20250087455A1

公开(公告)日：2025-03-13

申请号：US18956002

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI ,  Shota YAMAZAKI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes a step (a) of providing a substrate, the substrate including a first film and a second film having an opening on the first film, the first film containing a metallic element and a non-metallic element, a step (b) of forming a protective film on a sidewall of a recess formed in the first film corresponding to the opening, and a step (c) of etching the first film through the opening with a plasma generated from a processing gas including a halogen-containing gas at the same time as or after the step (b).

公开(公告)号：US20140284317A1

公开(公告)日：2014-09-25

申请号：US14219394

申请日：2014-03-19

Applicant: Tokyo Electron Limited

Inventor： Makoto KOBAYASHI

IPC: H05B3/06

CPC classification number: H05B3/16

Abstract: Disclosed is a heater device. The heater device includes: a cylindrical insulating member; a heater element which is spirally wound plural times and disposed on an inner circumference side of the insulating member; and a supporting member having one or more first members disposed on inner circumference side of the heater element and extending in an axial direction of the insulating member, and a plurality of second members which extend from the first members to an outside of the insulating member in a radial direction and pass through gaps between turns of the heater element which are adjacent to each other in the axial direction of the insulating member such that end portions of the second members are formed to be embedded in the insulating member, in which the first members have expansion allowance portions which allow thermal expansion in the axial direction.

Abstract translation: 公开了一种加热器装置。 加热器装置包括：圆柱形绝缘构件; 加热元件，螺旋状地卷绕多次，配置在绝缘部件的内周侧; 以及支撑构件，其具有设置在所述加热器元件的内周侧并沿所述绝缘构件的轴向方向延伸的一个或多个第一构件，以及多个第二构件，所述第二构件从所述第一构件延伸到所述绝缘构件的外部， 径向并通过在绝缘构件的轴向上彼此相邻的加热器元件的匝之间的间隙，使得第二构件的端部形成为嵌入绝缘构件中，其中第一构件 具有允许轴向热膨胀的膨胀余量部。

公开(公告)号：US20140048210A1

公开(公告)日：2014-02-20

申请号：US14060964

申请日：2013-10-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI ,  Jun OYABU

IPC: H01J37/04

CPC classification number: H01J37/04 ,  H01J37/32091 ,  H01J37/3255 ,  H01J37/32568

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed

Abstract translation: 基板处理装置包括容纳晶片的室，设置在室内并且晶片保持在其上的基座，与基座相对的上电极和连接到基座的第二高频电源，其中上电极电 连接到地面并且可相对于基座移动。 基板处理装置将处理空间中产生的等离子体和地面之间的等离子体与电介质之间的电位差和电介质与地之间的电位差通过上电极中的电介质分离，并将a 上电极和基座之间的间隙。 因此，改变了上电极和基座之间的等离子体密度

公开(公告)号：US20250087454A1

公开(公告)日：2025-03-13

申请号：US18955997

申请日：2024-11-22

Applicant: Tokyo Electron Limited

Inventor： Sho KUMAKURA ,  Soichiro KIMURA ,  Koyumi SASA ,  Nobuhiro ODASHIMA ,  Yuji MASAKI ,  Noboru TAKEMOTO ,  Makoto KOBAYASHI

IPC: H01J37/305 ,  H01L21/02

Abstract: An etching method includes: (a) providing a substrate, the substrate including a first film and a second film having openings on the first film, the first film containing a metallic element and a non-metallic element, and (b) etching the first film through the openings. The (b) includes: (i) etching the first film through the openings with a first plasma generated from a first processing gas including a halogen-containing gas by supplying a pulse of a radio-frequency power, (ii) modifying a sidewall of a recess formed in the (i) with a second plasma generated from a second processing gas, and (iii) repeating the (i) and the (ii).

公开(公告)号：US20150144266A1

公开(公告)日：2015-05-28

申请号：US14600288

申请日：2015-01-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Nobuhiro WADA ,  Makoto KOBAYASHI ,  Hiroshi TSUJIMOTO ,  Jun TAMURA ,  Mamoru NAOI

IPC: H01J37/32

CPC classification number: H01J37/32568 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32577

Abstract: The substrate processing apparatus includes a lower electrode on which a substrate is capable of being held, a high frequency power source electrically connected to the lower electrode, an upper electrode facing the lower electrode, a plasma processing space being formed between the lower electrode and the upper electrode, wherein the upper electrode includes an inner upper electrode facing a center portion of the lower electrode and an outer upper electrode facing a circumferential portion of the lower electrode, the inner electrode and the outer electrode being electrically insulated from each other, a first direct current power source electrically connected to the inner upper electrode to apply a positive direct current voltage, and a dielectric member covering a bottom surface of the upper electrode, the dielectric member facing the lower electrode with the plasma processing space in-between.

Abstract translation: 基板处理装置包括能够保持基板的下部电极，与下部电极电连接的高频电源，与下部电极相对的上部电极，形成在下部电极和下部电极之间的等离子体处理空间 上电极，其中上电极包括面向下电极的中心部分的内上电极和面向下电极的周向部分的外上电极，内电极和外电极彼此电绝缘，第一 电连接到内部上部电极以施加正的直流电压的直流电源，以及覆盖上部电极的底表面的电介质构件，介电构件面向下部电极，其间具有等离子体处理空间。