公开(公告)号：US20240153756A1

公开(公告)日：2024-05-09

申请号：US18411210

申请日：2024-01-12

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/02068 ,  H01L21/32134 ,  H01L21/67051

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

公开(公告)号：US11908680B2

公开(公告)日：2024-02-20

申请号：US17644843

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/02068 ,  H01L21/32134 ,  H01L21/67051

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

公开(公告)号：US20220199400A1

公开(公告)日：2022-06-23

申请号：US17644843

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/67

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.