公开(公告)号：US12170209B2

公开(公告)日：2024-12-17

申请号：US17443358

申请日：2021-07-26

Applicant: Tokyo Electron Limited

Inventor： Takashi Yabuta ,  Hidetoshi Nakao ,  Masatoshi Kasahara ,  Daisuke Saiki

IPC: H01L21/67 ,  B01F3/04 ,  B01F3/22 ,  B01F23/232 ,  B01F23/80 ,  H01L21/306 ,  B01F23/237

Abstract: A substrate processing apparatus includes: at least one processing part for etching a polysilicon film or an amorphous silicon film formed on a substrate using an alkaline chemical liquid; a reservoir configured to recover and store the chemical liquid used in the at least one processing part; processing lines configured to supply the chemical liquid stored in the reservoir to the at least one processing part; a circulation line configured to take out the chemical liquid from the reservoir and to return the same to the reservoir; and a first gas supply line connected to the circulation line and configured to supply an inert gas to the circulation line. The circulation line includes an ejection port configured to eject a mixed fluid of the inert gas supplied by the first gas supply line and the chemical liquid taken out from the reservoir into the chemical liquid stored in the reservoir.

公开(公告)号：US10236192B2

公开(公告)日：2019-03-19

申请号：US14548453

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Shogo Mizota ,  Tatsuya Nagamatsu ,  Daisuke Saiki ,  Kazuhiro Teraoka ,  Takashi Yabuta

IPC: H01L21/67

Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

公开(公告)号：US20240153756A1

公开(公告)日：2024-05-09

申请号：US18411210

申请日：2024-01-12

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/67

CPC classification number: H01L21/02068 ,  H01L21/32134 ,  H01L21/67051

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

公开(公告)号：US20140182455A1

公开(公告)日：2014-07-03

申请号：US14141605

申请日：2013-12-27

Applicant: Tokyo Electron Limited

Inventor： Shogo Mizota ,  Takashi Yabuta ,  Tatsuya Nagamatsu ,  Daisuke Saiki

IPC: B01D19/00

CPC classification number: B01D19/0005 ,  H01L21/67023

Abstract: A liquid processing apparatus and a chemical liquid collecting method can suppress corrosion of wirings formed on a substrate. The liquid processing apparatus includes a processing unit configured to perform a liquid process by supplying a chemical liquid to a substrate; a collecting line configured to collect the chemical liquid supplied to the processing unit; a supply line configured to supply the collected chemical liquid to the processing unit; and a gas supply unit configured to supply an inert gas into the collecting line.

Abstract translation: 液体处理装置和药液收集方法可以抑制在基板上形成的配线的腐蚀。 液体处理装置包括：处理单元，被配置为通过向基板提供化学液体来执行液体处理; 收集线，被配置为收集供给到所述处理单元的所述化学液体; 供给管线，被配置为将所收集的药液供应到所述处理单元; 以及气体供给单元，其构造成将惰性气体供给到收集线中。

公开(公告)号：US11908680B2

公开(公告)日：2024-02-20

申请号：US17644843

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/3213

CPC classification number: H01L21/02068 ,  H01L21/32134 ,  H01L21/67051

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

公开(公告)号：US20220199400A1

公开(公告)日：2022-06-23

申请号：US17644843

申请日：2021-12-17

Applicant: Tokyo Electron Limited

Inventor： Akira Fujita ,  Kyosei Goto ,  Hiroki Aso ,  Daisuke Saiki

IPC: H01L21/02 ,  H01L21/3213 ,  H01L21/67

Abstract: A substrate processing method includes a first process of supplying an etching liquid to a peripheral portion of a substrate while rotating the substrate having a metal polycrystalline film formed on a front surface thereof; a second process of supplying a rinse liquid to a portion of the substrate closer to a center side of the substrate than a supply position of the etching liquid in the first process while rotating the substrate; a third process of supplying the etching liquid to the peripheral portion of the substrate while rotating the substrate; a fourth process of supplying the rinse liquid to a portion of the substrate closer to the center side of the substrate than a supply position of the etching liquid in the third process while rotating the substrate; and a fifth process of drying the substrate after the fourth process.

公开(公告)号：US09862007B2

公开(公告)日：2018-01-09

申请号：US14666896

申请日：2015-03-24

Applicant: Tokyo Electron Limited

Inventor： Daisuke Saiki ,  Shogo Mizota ,  Takashi Yabuta ,  Jun Nonaka ,  Tatsuya Nagamatsu ,  Koji Tanaka ,  Tomiyasu Maezono

IPC: B08B3/14 ,  C11D11/00 ,  H01L21/67 ,  B24B57/02 ,  B01D36/04 ,  B01D37/04

CPC classification number: B08B3/14 ,  B01D36/04 ,  B01D37/04 ,  B24B57/02 ,  C11D11/0047 ,  H01L21/67017

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

公开(公告)号：US09192878B2

公开(公告)日：2015-11-24

申请号：US14141605

申请日：2013-12-27

Applicant: Tokyo Electron Limited

Inventor： Shogo Mizota ,  Takashi Yabuta ,  Tatsuya Nagamatsu ,  Daisuke Saiki

IPC: B01D19/00 ,  H01L21/67

CPC classification number: B01D19/0005 ,  H01L21/67023

Abstract: A liquid processing apparatus and a chemical liquid collecting method can suppress corrosion of wirings formed on a substrate. The liquid processing apparatus includes a processing unit configured to perform a liquid process by supplying a chemical liquid to a substrate; a collecting line configured to collect the chemical liquid supplied to the processing unit; a supply line configured to supply the collected chemical liquid to the processing unit; and a gas supply unit configured to supply an inert gas into the collecting line.

Abstract translation: 液体处理装置和药液收集方法可以抑制在基板上形成的配线的腐蚀。 液体处理装置包括：处理单元，被配置为通过向基板提供化学液体来执行液体处理; 收集线，被配置为收集供给到所述处理单元的所述化学液体; 供给管线，被配置为将所收集的药液供应到所述处理单元; 以及气体供给单元，其构造成将惰性气体供给到收集线中。

公开(公告)号：US20150273538A1

公开(公告)日：2015-10-01

申请号：US14666896

申请日：2015-03-24

Applicant: Tokyo Electron Limited

Inventor： Daisuke Saiki ,  Shogo Mizota ,  Takashi Yabuta ,  Jun Nonaka ,  Tatsuya Nagamatsu ,  Koji Tanaka ,  Tomiyasu Maezono

IPC: B08B3/14

CPC classification number: B08B3/14 ,  B01D36/04 ,  B01D37/04 ,  B24B57/02 ,  C11D11/0047 ,  H01L21/67017

Abstract: Disclosed are a substrate liquid processing apparatus and method for performing a liquid processing on a substrate using a processing liquid, and a computer-readable recording medium with a substrate liquid processing program recorded therein. In the method, a first chemical liquid supply step is performed to supply a first chemical liquid from a first chemical liquid supply unit to a processing liquid storage unit, a first chemical liquid purifying step is performed to purify the first chemical liquid in a chemical liquid purifying unit, a second chemical liquid supply step is performed to supply a second chemical liquid from a second chemical liquid supply unit to the processing liquid storage unit, and a processing liquid supply step is performed to supply the processing liquid obtained by mixing the first and second chemical liquids from the processing liquid supply unit to substrate liquid processing units.

Abstract translation: 公开了一种用于使用处理液在基板上进行液体处理的基板液体处理装置和方法，以及记录有基板液体处理程序的计算机可读记录介质。 在该方法中，进行第一药液供给工序，将第一药液从第一药液供给部供给至处理液储存部，进行第一化学液净化工序，对化学液中的第一药液进行净化 净化单元，执行第二化学液体供给步骤，将第二化学液体从第二药液供给单元供给到处理液储存单元，并且进行处理液供给工序，供给通过混合第一和第 第二化学液体从处理液体供应单元到基板液体处理单元。

公开(公告)号：US20150147888A1

公开(公告)日：2015-05-28

申请号：US14548453

申请日：2014-11-20

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Shogo Mizota ,  Tatsuya Nagamatsu ,  Daisuke Saiki ,  Kazuhiro Teraoka ,  Takashi Yabuta

IPC: H01L21/67 ,  H01L21/306

CPC classification number: H01L21/6708

Abstract: A liquid processing apparatus of the present disclosure holds and rotate a substrate in a substrate holding unit, ejects an etching liquid while moving a main nozzle of a main nozzle unit between a first position where the etching liquid reaches a center of the substrate and a second position closer to a peripheral side of the substrate than the first position, and then, ejects the etching liquid to the substrate from a sub nozzle provided at a third position closer to the peripheral side of the substrate than the first position at an ejection flow rate higher than that from the main nozzle.

Abstract translation: 本公开的液体处理装置保持并旋转衬底保持单元中的衬底，在将主喷嘴单元的主喷嘴移动到蚀刻液到达衬底的中心的第一位置和第二位置之间时，喷射蚀刻液体 位于比第一位置更靠近基板周边的位置，然后以比喷射流速比第一位置更靠近基板周边的第三位置从喷嘴喷射蚀刻液体到基板 高于主喷嘴。