公开(公告)号：US10141209B2

公开(公告)日：2018-11-27

申请号：US14630806

申请日：2015-02-25

Applicant: Tokyo Electron Limited

Inventor： Masashi Itonaga ,  Masanobu Watanabe

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/448 ,  C23C16/56

Abstract: The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. A first temperature adjusting unit performs a temperature adjustment of the liquid-phase portion and a second temperature adjusting unit performs a temperature adjustment of the vapor-phase portion such that the temperature of the vapor-phase portion is higher than the temperature of the liquid-phase portion.

公开(公告)号：US11049758B2

公开(公告)日：2021-06-29

申请号：US16390079

申请日：2019-04-22

Applicant: Tokyo Electron Limited

Inventor： Koji Ushimaru ,  Masashi Itonaga

IPC: H01L21/683 ,  H01L21/687 ,  B25B11/00

Abstract: A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.

公开(公告)号：US20190295864A1

公开(公告)日：2019-09-26

申请号：US16360357

申请日：2019-03-21

Applicant: Tokyo Electron Limited

Inventor： Masashi Itonaga ,  Koji Ushimaru

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus includes: placing table on which a substrate to be processed is placed; suction mechanism including a pipe configured to apply a suction force to a rear surface of the substrate through one or a plurality of hole portions formed in the placing table to hold the substrate; and fluid supply source configured to discharge a fluid to one or a plurality of discharge portions formed in the placing table outward of the hole portions in the placing table and to form a horizontal airflow toward an outside of the substrate on a rear surface of the substrate.

公开(公告)号：US10340140B2

公开(公告)日：2019-07-02

申请号：US15848228

申请日：2017-12-20

Applicant: Tokyo Electron Limited

Inventor： Tetsuo Fukuoka ,  Masashi Itonaga

IPC: H01L21/027 ,  H01L21/66 ,  H01L21/67

Abstract: An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5 includes a processing vessel 21 configured to accommodate therein a wafer W as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). The controller 100 is configured to determine a state of a gas within the processing vessel 21 based on a relative humidity obtained after a supply of the air by the opening/closing unit 60 and a supply of the HMDS gas by the gas supply unit 30 are performed.

公开(公告)号：US20190326150A1

公开(公告)日：2019-10-24

申请号：US16390079

申请日：2019-04-22

Applicant: Tokyo Electron Limited

Inventor： Koji Ushimaru ,  Masashi Itonaga

IPC: H01L21/683 ,  B25B11/00

Abstract: A substrate can be placed on a placing table horizontally. When placing the substrate on the placing table having multiple protrusions configured to support the substrate, the substrate is attracted to the placing table while performing a suction from a suction hole configured to attract a position, different from positions located above the protrusions, of the substrate placed on the placing table, and then, a suction force of the suction hole is reduced. Accordingly, it is possible to place the substrate on the placing table while correcting the flexure. Further, the substrate can be horizontally placed on the placing table since deformation of the wafer, caused by attracting a bottom surface of the wafer strongly, is suppressed.

公开(公告)号：US20180182612A1

公开(公告)日：2018-06-28

申请号：US15848228

申请日：2017-12-20

Applicant: Tokyo Electron Limited

Inventor： Tetsuo Fukuoka ,  Masashi Itonaga

IPC: H01L21/027 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L21/027 ,  H01L21/0273 ,  H01L21/67017 ,  H01L21/67253 ,  H01L21/67288 ,  H01L22/10

Abstract: An abnormal processing can be appropriately detected in a processing of supplying a preset gas to a substrate as a processing target. A hydrophobizing unit U5 includes a processing vessel 21 configured to accommodate therein a wafer W as a processing target; an opening/closing unit 60 (first supply unit) configured to supply air (first gas) into the processing vessel 21; a gas supply unit 30 (second supply unit) configured to supply a HMDS gas (second gas), having a relative humidity different from that of the air, into the processing vessel 21; and a controller 100 (control unit). The controller 100 is configured to determine a state of a gas within the processing vessel 21 based on a relative humidity obtained after a supply of the air by the opening/closing unit 60 and a supply of the HMDS gas by the gas supply unit 30 are performed.

公开(公告)号：US20150246329A1

公开(公告)日：2015-09-03

申请号：US14630806

申请日：2015-02-25

Applicant: Tokyo Electron Limited

Inventor： Masashi Itonaga ,  Masanobu Watanabe

IPC: B01F3/04

CPC classification number: H01L21/67248 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/56 ,  H01L21/0201 ,  H01L21/02656 ,  H01L21/67017

Abstract: The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. A first temperature adjusting unit performs a temperature adjustment of the liquid-phase portion and a second temperature adjusting unit performs a temperature adjustment of the vapor-phase portion such that the temperature of the vapor-phase portion is higher than the temperature of the liquid-phase portion.

Abstract translation: 本公开提供了一种用于通过用载气鼓泡原料液体来产生处理气体的装置。 由起泡装置产生的处理气体通过取出单元从原料液体的液相部分上方的气相部分中取出。 第一温度调节单元执行液相部分的温度调节，第二温度调节单元执行气相部分的温度调节，使得气相部分的温度高于液相部分的温度， 相位部分。

公开(公告)号：US20140083614A1

公开(公告)日：2014-03-27

申请号：US14031785

申请日：2013-09-19

Applicant: Tokyo Electron Limited

Inventor： Masashi Itonaga ,  Yohei Sano

IPC: G03F7/36

CPC classification number: G03F7/36

Abstract: The gas supply unit includes first gas flow paths having an upstream side communicated with a common first gas supply hole and diverged on the way to have a downstream side, and second gas flow paths having an upstream side communicated with a common second gas supply hole and diverged on the way to have a downstream side. A flow path length and a flow path diameter of each of the diverged first gas flow paths and the diverged second gas flow paths are set such that periods of time for gas flowing from the first gas supply hole to the respective first gas ejecting holes are matched with each other, and periods of time for gas flowing from the second gas supply hole to the respective second gas ejecting holes are matched with each other.

Abstract translation: 气体供给单元包括：第一气体流路，其具有与共用的第一气体供给孔连通并在途中具有下游侧的上游侧，第二气体流路的上游侧与公共的第二气体供给孔连通， 在下游方面有所分歧。 分散的第一气体流路和发散的第二气体流路的流路长度和流路直径被设定为使得从第一气体供给孔流向各个第一气体喷出孔的气体的时间段相匹配 并且从第二气体供给孔向各个第二气体喷射孔流动的气体的时间段彼此匹配。