公开(公告)号：US20250140552A1

公开(公告)日：2025-05-01

申请号：US18923883

申请日：2024-10-23

Applicant: Tokyo Electron Limited

Inventor： Motoki SHINDEN ,  Yukio TOJO ,  Yoichiro CHIBA ,  Masaki KUROKAWA

IPC: H01L21/02 ,  H01L21/67

Abstract: A technique capable of increasing the deuterium concentration in an insulating film is provided. A substrate processing method according to an aspect of the present disclosure includes preparing a substrate having an insulating film on a surface thereof, raising the temperature of the substrate from a first temperature to a second temperature higher than the first temperature, and maintaining the substrate at the second temperature. Raising of the temperature to the second temperature includes supplying either gas or both gases selected from deuterium gas and hydrogen gas to the substrate, and maintaining of the substrate at the second temperature includes supplying a deuterium gas to the substrate.