公开(公告)号：US20220081771A1

公开(公告)日：2022-03-17

申请号：US17472891

申请日：2021-09-13

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a plurality of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container, disposed symmetrically with respect to a straight line connecting a center of the processing container and a center of the exhaust slit, and each configured to eject a same processing gas into the processing container.

公开(公告)号：US20170256450A1

公开(公告)日：2017-09-07

申请号：US15450595

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichiro CHIBA ,  Daisuke SUZUKI ,  Atsushi ENDO

IPC: H01L21/768 ,  C23C16/06 ,  C23C16/02 ,  C23C16/44 ,  C23C16/458 ,  C23C16/455 ,  C23C16/04 ,  C23C16/24 ,  C23C16/46

CPC classification number: H01L21/76879 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/06 ,  C23C16/24 ,  H01L21/76843 ,  H01L21/76861 ,  H01L21/76876

Abstract: There is provided a method of filling a recess with a germanium-based film composed of germanium or silicon germanium in a substrate to be processed on which an insulating film having the recess formed therein is formed, the method including: forming a silicon film on a surface of the insulating film at a thickness as not to completely fill the recess; subsequently, etching the silicon film such that the silicon film remains only in a bottom portion of the recess; and subsequently, selectively growing the germanium-based film composed of germanium or silicon germanium on the silicon film remaining in the bottom portion of the recess and selectively filling the recess with the germanium-based film.

公开(公告)号：US20170253989A1

公开(公告)日：2017-09-07

申请号：US15450461

申请日：2017-03-06

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoichiro CHIBA ,  Daisuke SUZUKI ,  Kazuhide HASEBE

IPC: C30B1/02 ,  C30B29/08 ,  C23C16/458 ,  C30B29/68 ,  C23C16/06 ,  C23C16/52 ,  C30B29/06 ,  C30B29/52

Abstract: A method of growing a crystal in a recess in a substrate on which an insulating film having the recess is formed, includes: forming a first film on the insulating film at a thickness as not to completely fill the recess; etching the first film by an etching gas to remain the first film only in a bottom portion of the recess; annealing the substrate such that the first film in the bottom portion is modified into a crystalline layer; forming a second film on the insulating film and a surface of the crystalline layer at a thickness as not to completely fill the recess; annealing the substrate such that the second film is crystallized from the bottom portion through a solid phase epitaxial growth to form an epitaxial crystal layer; and etching and removing the second film remaining on the substrate by an etching gas.

公开(公告)号：US20250140552A1

公开(公告)日：2025-05-01

申请号：US18923883

申请日：2024-10-23

Applicant: Tokyo Electron Limited

Inventor： Motoki SHINDEN ,  Yukio TOJO ,  Yoichiro CHIBA ,  Masaki KUROKAWA

IPC: H01L21/02 ,  H01L21/67

Abstract: A technique capable of increasing the deuterium concentration in an insulating film is provided. A substrate processing method according to an aspect of the present disclosure includes preparing a substrate having an insulating film on a surface thereof, raising the temperature of the substrate from a first temperature to a second temperature higher than the first temperature, and maintaining the substrate at the second temperature. Raising of the temperature to the second temperature includes supplying either gas or both gases selected from deuterium gas and hydrogen gas to the substrate, and maintaining of the substrate at the second temperature includes supplying a deuterium gas to the substrate.

公开(公告)号：US20250066916A1

公开(公告)日：2025-02-27

申请号：US18944529

申请日：2024-11-12

Applicant: Tokyo Electron Limited

Inventor： Hiroki IRIUDA ,  Yoichiro CHIBA ,  Atsushi ENDO

IPC: C23C16/455 ,  C23C16/52

Abstract: A processing apparatus includes: a processing container having a substantially cylindrical shape and provided with an exhaust slit on a side wall; and a first pair of gas nozzles extending in a vertical direction along an inside of the side wall of the processing container and disposed symmetrically with respect to a straight line extending from a center of the exhaust slit to a portion of the side wall positioned opposite to the exhaust slit via a center of the processing container; a second pair of gas nozzle disposed symmetrically with respect to the straight line; at least one memory storing executable instructions; and at least one processor configured to execute the executable instructions to: control the first pair of gas nozzles and the second pair of gas nozzles to eject a same processing gas into the processing container.