公开(公告)号：US20130260572A1

公开(公告)日：2013-10-03

申请号：US13804036

申请日：2013-03-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yuichi TAKENAGA ,  Yukio TOJO

IPC: H01L21/31 ,  H01L21/02

CPC classification number: H01L22/12 ,  C23C16/24 ,  C23C16/52 ,  H01L21/02104 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/67248 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a continuous processing system, a controller of a heat treatment apparatus calculates a weight of each layer from input target film thicknesses of a phosphorous-doped polysilicon film (D-poly film) and an amorphous silicon film (a-Si film), and calculates activation energy of stacked films based on the calculated weight and activation energy. The controller prepares a stacked film model based on the calculated activation energy and a relationship of a temperature of each zone and film thicknesses of the D-poly film and the a-Si film, and calculates an optimum temperature of each zone by using the prepared stacked film model. The controller controls power controllers of heaters to set a temperature in a reaction tube to be the calculated temperature of each zone and forms stacked films on a semiconductor wafer by controlling a pressure adjusting unit, flow rate adjusting units, etc.

Abstract translation: 在连续处理系统中，热处理装置的控制器根据磷掺杂多晶硅膜（D-poly膜）和非晶硅膜（a-Si膜）的输入目标膜厚计算每层的重量， 基于计算的重量和活化能计算层叠薄膜的活化能。 控制器基于所计算的活化能和D区多层薄膜与a-Si薄膜的各个区域的温度和薄膜厚度的关系，制备叠层薄膜模型，并通过使用所制备的活化能来计算每个区域的最适温度 堆叠电影模型。 控制器控制加热器的功率控制器，将反应管中的温度设定为每个区域的计算温度，并通过控制压力调节单元，流量调节单元等在半导体晶圆上形成叠层薄膜。

公开(公告)号：US20250140552A1

公开(公告)日：2025-05-01

申请号：US18923883

申请日：2024-10-23

Applicant: Tokyo Electron Limited

Inventor： Motoki SHINDEN ,  Yukio TOJO ,  Yoichiro CHIBA ,  Masaki KUROKAWA

IPC: H01L21/02 ,  H01L21/67

Abstract: A technique capable of increasing the deuterium concentration in an insulating film is provided. A substrate processing method according to an aspect of the present disclosure includes preparing a substrate having an insulating film on a surface thereof, raising the temperature of the substrate from a first temperature to a second temperature higher than the first temperature, and maintaining the substrate at the second temperature. Raising of the temperature to the second temperature includes supplying either gas or both gases selected from deuterium gas and hydrogen gas to the substrate, and maintaining of the substrate at the second temperature includes supplying a deuterium gas to the substrate.