公开(公告)号：US20230124143A1

公开(公告)日：2023-04-20

申请号：US17964554

申请日：2022-10-12

Applicant: Tokyo Electron Limited

Inventor： Tomoya HASEGAWA ,  Masaki KUROKAWA ,  Masami OIKAWA

IPC: B08B9/08 ,  B08B13/00 ,  C23C16/44 ,  C23C16/42

Abstract: A processing apparatus includes: a processing container; a temperature sensor that detects a temperature therein; a gas supply unit that supplies a cleaning gas into the processing container; a pressure regulation unit that regulates a pressure in the processing container; and a control unit that controls the gas supply unit and the pressure regulation unit to perform a cleaning processing of removing a deposited film in the processing container. The control unit stores a vapor pressure curve in which the temperature in the processing container is associated with a vapor pressure of water in the processing container. In the cleaning processing, the control unit sets a target pressure below the vapor pressure curve based on the temperature detected by the temperature sensor and the vapor pressure curve, and controls the pressure regulation unit such that the pressure in the processing container becomes the target pressure.

公开(公告)号：US20140080315A1

公开(公告)日：2014-03-20

申请号：US14029366

申请日：2013-09-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02

CPC classification number: H01L21/022 ,  C23C16/308 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/45557 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31111

Abstract: A method of forming a laminated film includes forming a silicon oxide film on a plurality of target objects loaded in a reaction chamber, and forming a silicon oxynitride film on the plurality of target objects by supplying a silicon source, an oxidizing agent and a nitride agent to the reaction chamber, wherein forming the silicon oxide film and forming the silicon oxynitride film are repeatedly performed for a predetermined number of times on the plurality of target objects to form a laminated film including the silicon oxynitride film and the silicon oxide film.

Abstract translation: 形成层压膜的方法包括：在装载在反应室中的多个目标物体上形成氧化硅膜，通过供给硅源，氧化剂和氮化物，在多个目标物体上形成氮氧化硅膜 在反应室中，在多个目标物体上重复进行预定次数的形成氧化硅膜并形成氧氮化硅膜，形成包含氮氧化硅膜和氧化硅膜的层叠膜。

公开(公告)号：US20140004715A1

公开(公告)日：2014-01-02

申请号：US13930596

申请日：2013-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31111

Abstract: A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.

Abstract translation: 形成硅氧烷膜的方法包括：通过向容纳多个目标物体的反应室供应含氯硅源，在多个目标物体上形成氧化硅膜; 通过向反应室内供给氢，氧或一氧化二氮并使反应室的内部成为氢氧气氛或氢气氧化膜，形成氧化硅膜而形成氧化硅膜， 一氧化二氮气氛。

公开(公告)号：US20250140552A1

公开(公告)日：2025-05-01

申请号：US18923883

申请日：2024-10-23

Applicant: Tokyo Electron Limited

Inventor： Motoki SHINDEN ,  Yukio TOJO ,  Yoichiro CHIBA ,  Masaki KUROKAWA

IPC: H01L21/02 ,  H01L21/67

Abstract: A technique capable of increasing the deuterium concentration in an insulating film is provided. A substrate processing method according to an aspect of the present disclosure includes preparing a substrate having an insulating film on a surface thereof, raising the temperature of the substrate from a first temperature to a second temperature higher than the first temperature, and maintaining the substrate at the second temperature. Raising of the temperature to the second temperature includes supplying either gas or both gases selected from deuterium gas and hydrogen gas to the substrate, and maintaining of the substrate at the second temperature includes supplying a deuterium gas to the substrate.

公开(公告)号：US20140284808A1

公开(公告)日：2014-09-25

申请号：US14220557

申请日：2014-03-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/768 ,  H01L21/67 ,  H01L23/498

CPC classification number: H01L21/022 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/3105 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of manufacturing a stacked semiconductor device, which includes forming a stacked film on a semiconductor substrate, the stacked film including a plurality of silicon oxide films and a plurality of silicon nitride films, which are alternately arranged on top of each other, and the stacked film being obtained by repeatedly performing a series of operations of forming the silicon oxide film on the semiconductor substrate using one of triethoxysilane, octamethylcyclotetrasiloxane, hexamethyldisilazane and diethylsilane gases, and forming the silicon nitride film on the formed silicon oxide film; etching the silicon nitride films in the stacked film; removing carbons contained in the silicon oxide films, which are not removed in the etching, to reduce a concentration of the carbons; and forming electrodes in regions where the silicon nitride films are etched in the etching.

Abstract translation: 提供了一种叠层半导体器件的制造方法，其包括在半导体衬底上形成层叠膜，所述层叠膜包括交替排列在彼此的多个氧化硅膜和多个氮化硅膜， 并且通过重复地使用三乙氧基硅烷，八甲基环四硅氧烷，六甲基二硅氮烷和二乙基硅烷气体中的一种在半导体衬底上形成氧化硅膜的一系列操作来获得叠层膜，并在所形成的氧化硅膜上形成氮化硅膜; 蚀刻层叠膜中的氮化硅膜; 除去在蚀刻中未除去的氧化硅膜中含有的碳以减少碳的浓度; 以及在蚀刻中蚀刻氮化硅膜的区域中形成电极。

公开(公告)号：US20140011371A1

公开(公告)日：2014-01-09

申请号：US13933902

申请日：2013-07-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  H01L21/02104 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/31111

Abstract: A silicone oxide film forming method includes forming a silicon oxide film on a plurality of target objects by supplying a chlorine atom-containing silicon source into a reaction chamber accommodating the plurality of target objects. Forming the silicon oxide film includes making an interior of the reaction chamber be under a hydrogen atmosphere by supplying a hydrogen gas into the reaction chamber.

Abstract translation: 氧化硅膜形成方法包括通过将含氯原子硅源供应到容纳多个目标物体的反应室中，在多个目标物体上形成氧化硅膜。 形成氧化硅膜包括通过向反应室供应氢气使反应室的内部在氢气氛下形成。

公开(公告)号：US20140308820A1

公开(公告)日：2014-10-16

申请号：US14315604

申请日：2014-06-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Atsushi ENDO ,  Masaki KUROKAWA ,  Hiroki IRIUDA

IPC: H01L21/02 ,  H01L23/00

CPC classification number: H01L21/02164 ,  C23C16/345 ,  C23C16/402 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/67309 ,  H01L23/562 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.

Abstract translation: 沉积氧化硅膜和氮化硅膜的方法包括在衬底上沉积氧化硅膜和氮化硅膜，并且用于形成氮化硅膜的气体还包括硼。

公开(公告)号：US20140251209A1

公开(公告)日：2014-09-11

申请号：US14202587

申请日：2014-03-10

Applicant: Tokyo Electron Limited

Inventor： Tomoyuki OBU ,  Masaki KUROKAWA ,  Hiroki IRIUDA ,  Ken ITABASHI ,  Yasushi TAKEUCHI

IPC: H01L21/673

CPC classification number: H01L21/67303 ,  H01L21/67309

Abstract: A support member includes: a mounting unit having a first main surface and a second main surface, the first main surface being configured to mount a first object to be processed thereon and the second main surface being configured to mount a second object to be processed thereon; and a wall installed in a part of the outer peripheral portion along the outer periphery of the mounting unit, the wall having a first portion protruding in a vertical direction than the first object to be processed mounted on the first main surface of the mounting unit. The inner peripheral surface of the first portion of the wall is formed in a first shape that allows the first object to be processed to be held by the first portion of the wall.

Abstract translation: 支撑构件包括：具有第一主表面和第二主表面的安装单元，所述第一主表面被配置为将待处理的第一物体安装在其上，并且所述第二主表面被配置为将待处理的第二物体安装在其上 ; 以及沿所述安装单元的外周安装在所述外周部的一部分中的壁，所述壁具有在垂直方向上突出的第一部分，所述第一部分安装在所述安装单元的所述第一主表面上。 壁的第一部分的内周表面形成为允许第一物体被处理以由壁的第一部分保持的第一形状。