公开(公告)号：US11901197B2

公开(公告)日：2024-02-13

申请号：US17689199

申请日：2022-03-08

Applicant: Tokyo Electron Limited

Inventor： Masataka Gosho ,  Reijiro Yamanaka

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67034 ,  H01L21/02101

Abstract: A substrate processing apparatus includes: a processing container to which a supercritical fluid is supplied, the processing container being configured to dry a substrate by replacing a drying liquid collected on the substrate with the supercritical fluid; a discharge line configured to discharge a mixed fluid containing the supercritical fluid and the drying liquid from an interior of the processing container; and a density detector configured to detect a density of the mixed fluid flowing through the discharge line.

公开(公告)号：US12057327B2

公开(公告)日：2024-08-06

申请号：US18107935

申请日：2023-02-09

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masataka Gosho ,  Yuichi Douki ,  Satoshi Biwa ,  Satoshi Okamura ,  Katsuhiro Ookawa ,  Yuichiro Kunugimoto

IPC: H01L21/67 ,  B08B3/08 ,  B08B7/04 ,  H01L21/02 ,  H01L21/66 ,  H01L21/687

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/04 ,  H01L21/02057 ,  H01L21/02101 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/67288 ,  H01L21/68764 ,  H01L22/12 ,  H01L22/20 ,  H01L21/67248

Abstract: There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

公开(公告)号：US20250167022A1

公开(公告)日：2025-05-22

申请号：US18949248

申请日：2024-11-15

Applicant: Tokyo Electron Limited

Inventor： Keita Hirase ,  Koji Tanaka ,  Yuji Kimura ,  Shota Takei ,  Masataka Gosho ,  Seiji Togawa ,  Kazuaki Kitamura ,  Yuji Hagishima ,  Tomoaki Ohara ,  Atsushi Egashira

IPC: H01L21/67 ,  B08B3/04 ,  B08B13/00 ,  G01G17/04 ,  H01L21/02 ,  H01L21/66 ,  H01L21/683 ,  H01L21/687

Abstract: A substrate standby device configured to allow a substrate to standby is provided. The substrate has a first liquid film adhering to a top surface and a bottom surface thereof. The substrate standby device includes a processing liquid supply configured to supply a processing liquid to the top surface of the substrate; a mass measuring device configured to measure a mass of the substrate; a first imaging device configured to acquire a top surface image; and a controller. The controller performs: forming a second liquid film by supplying a first amount of the processing liquid to the top surface of the substrate; measuring a mass of the second liquid film; acquiring the top surface image; and determining a state of the second liquid film based on the top surface image when the mass of the second liquid film is equal to or greater than a first threshold.

公开(公告)号：US20220254658A1

公开(公告)日：2022-08-11

申请号：US17649933

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US12276455B2

公开(公告)日：2025-04-15

申请号：US17464367

申请日：2021-09-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masataka Gosho ,  Shu Yamamoto ,  Tomohito Ura ,  Satoshi Okamura

IPC: F26B5/00 ,  F26B21/06 ,  G01M3/04

Abstract: A substrate processing apparatus for drying a substrate by substituting a liquid film of a drying liquid formed on the substrate with a supercritical fluid incudes: a pressure container configured to accommodate the substrate on which the liquid film is formed; a discharge line configured to discharge a fluid inside the pressure container; a depressurizing valve provided in a middle of the discharge line; and a concentration measurement part configured to measure a concentration of vapor of the drying liquid in the fluid flowing through the discharge line, wherein the concentration measurement part is provided on a downstream side of the depressurizing valve of the discharge line and measures the concentration of the drying liquid in the fluid depressurized by the depressurizing valve.

公开(公告)号：US12237178B2

公开(公告)日：2025-02-25

申请号：US18392552

申请日：2023-12-21

Applicant: Tokyo Electron Limited

Inventor： Masataka Gosho ,  Reijiro Yamanaka

IPC: H01L21/67 ,  H01L21/02

Abstract: A substrate processing apparatus includes: a processing container to which a supercritical fluid is supplied, the processing container being configured to dry a substrate by replacing a drying liquid collected on the substrate with the supercritical fluid; a discharge line configured to discharge a mixed fluid containing the supercritical fluid and the drying liquid from an interior of the processing container; and a density detector configured to detect a density of the mixed fluid flowing through the discharge line.

公开(公告)号：US20250167011A1

公开(公告)日：2025-05-22

申请号：US19032823

申请日：2025-01-21

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.

公开(公告)号：US12237177B2

公开(公告)日：2025-02-25

申请号：US17649933

申请日：2022-02-04

Applicant: Tokyo Electron Limited

Inventor： Shogo Fukui ,  Masataka Gosho ,  Satoshi Okamura ,  Tomohito Ura

IPC: H01L21/67 ,  H01L21/683

Abstract: A substrate processing apparatus configured to dry a substrate having a liquid film formed on a pattern formation surface thereof with a supercritical fluid includes a processing vessel which is configured to accommodate the substrate therein and into which the supercritical fluid is supplied; a substrate holder which has a base member configured to support the substrate from below while allowing the pattern formation surface of the substrate to face upwards, and which is configured to hold the substrate within the processing vessel; a first detector configured to detect an inclination of the base member with respect to a horizontal plane; a posture adjusting device configured to adjust the inclination of the base member with respect to the horizontal plane; and a controller configured to control the posture adjusting device to perform horizontal leveling of the base member based on a detection result of the first detector.