公开(公告)号：US11970768B2

公开(公告)日：2024-04-30

申请号：US16993432

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Shimon Otsuki ,  Takeshi Oyama ,  Ren Mukouyama ,  Jun Ogawa ,  Noriaki Fukiage

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/0228

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.