中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.022 seconds)

    Film forming method and film forming apparatus
    2.
    发明授权
    Film forming method and film forming apparatus 有权

    公开(公告)号：US11508571B2

    公开(公告)日：2022-11-22

    申请号：US16992541

    申请日：2020-08-13

    Applicant: Tokyo Electron Limited

    Inventor： Jun Ogawa ,  Noriaki Fukiage

    IPC: H01L21/02 ,  C23C16/458 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

    Abstract: A film forming method includes: rotating a rotary table to revolve a substrate which is placed on the rotary table and has a recess in its surface; supplying a raw material gas to a first region on the rotary table; supplying an ammonia gas to a second region on the rotary table; forming a first SiN film in the recess by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a first flow rate, while the rotary table rotates at a first rotation speed; and forming a second SiN film in the recess such that the second SiN film is laminated on the first SiN film by supplying the raw material gas to the first region and supplying the ammonia gas to the second region at a second flow rate, while the rotary table rotates at a second rotation speed.

    Method and apparatus for forming metal oxide film
    5.
    发明授权
    Method and apparatus for forming metal oxide film 有权
    用于形成金属氧化物膜的方法和装置

    公开(公告)号：US09552981B2

    公开(公告)日：2017-01-24

    申请号：US14613541

    申请日：2015-02-04

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Kazuo Yabe ,  Jun Ogawa

    IPC: H01L21/02 ,  C23C16/455 ,  H01L29/51 ,  H01L21/28 ,  C23C16/40 ,  C23C16/56

    CPC classification number: H01L21/0228 ,  C23C16/403 ,  C23C16/45523 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02178 ,  H01L21/02337 ,  H01L21/28229 ,  H01L29/517

    Abstract: A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.

    Abstract translation: 金属氧化物膜形成方法包括：重复循环第一预定次数，该循环包括将含有有机金属前体的气体供给到被处理物体的处理室中，并将氧气供给到处理室 在含有有机金属前体的气体被供给到处理室中之后; 向所述处理室供给臭氧气体，其中重复所述循环和供给所述臭氧气体的步骤重复第二预定次数，使得在被处理物体的表面上形成金属氧化物膜。

    Film deposition apparatus having a turntable and film deposition method
    6.
    发明授权
    Film deposition apparatus having a turntable and film deposition method 有权
    具有转台和成膜方法的成膜装置

    公开(公告)号：US09153429B2

    公开(公告)日：2015-10-06

    申请号：US14106926

    申请日：2013-12-16

    Applicant: Tokyo Electron Limited

    Inventor： Jun Ogawa

    IPC: H01L21/00 ,  H01L21/02 ,  C23C16/34 ,  C23C16/40 ,  C23C16/455

    CPC classification number: H01L21/02164 ,  C23C16/34 ,  C23C16/405 ,  C23C16/4551 ,  C23C16/45551 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/02337

    Abstract: A method of depositing a film of forming an oxide film containing a predetermined element on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing the oxide film by rotating the turntable while supplying a reaction gas containing the predetermined element, the oxidation gas from the second gas supplying portion, and the separation gas; and rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion.

    Abstract translation: 一种使用包括转台安装基板的设备在基板上形成含有预定元素的氧化物膜的膜的方法，设置有气体供应部分的转盘上表面之上的第一和第二处理区域，分离气体供应部分 第一处理区域和第二处理区域，以及分离区域，包括通过旋转转盘同时提供含有预定元素的反应气体，来自第二气体供给部分的氧化气体和分离气体来沉积氧化物膜; 并且在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，以及来自第二气体供应部分的氧化气体。

    Method of depositing a film using a turntable apparatus
    7.
    发明授权
    Method of depositing a film using a turntable apparatus 有权
    使用转盘装置沉积膜的方法

    公开(公告)号：US08987147B2

    公开(公告)日：2015-03-24

    申请号：US14108663

    申请日：2013-12-17

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki Ikegawa ,  Masahiko Kaminishi ,  Kosuke Takahashi ,  Masato Koakutsu ,  Jun Ogawa

    IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

    CPC classification number: H01L21/0228 ,  C23C16/45551 ,  C23C16/4584 ,  H01L21/02148 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A method of depositing a film on substrates using an apparatus including a turntable mounting substrates, first and second process areas above the upper surface of the turntable provided with gas supplying portions, a separation gas supplying portion between the first and second process areas, and a separation area including depositing a first oxide film by rotating the turntable first turns while supplying a first reaction gas, the oxidation gas from the second gas supplying portion, and the separation gas; rotating at least one turn while supplying the separation gas from the first gas supplying portion and the separation gas supplying portion, and the oxidation gas from the second gas supplying portion; and rotating at least second turns to deposit a second oxide film while supplying a second reaction gas from the first gas supplying portion, the oxidation gas from the second gas supplying portion, and the separation gas.

    Abstract translation: 一种使用包括转台安装基板的设备在基板上沉积薄膜的方法，设置有气体供应部分的转盘上表面上方的第一和第二处理区域，在第一和第二处理区域之间的分离气体供应部分和 分离区域，包括通过旋转转盘第一匝来沉积第一氧化物膜，同时供应第一反应气体，来自第二气体供应部分的氧化气体和分离气体; 在从第一气体供给部分和分离气体供应部分供应分离气体的同时旋转至少一圈，并且来自第二气体供应部分的氧化气体; 并且至少第二匝旋转以沉积第二氧化物膜，同时从第一气体供应部分提供第二反应气体，来自第二气体供应部分的氧化气体和分离气体。

    FILM DEPOSITION METHOD
    8.
    发明申请
    FILM DEPOSITION METHOD 有权
    膜沉积法

    公开(公告)号：US20140011353A1

    公开(公告)日：2014-01-09

    申请号：US13937070

    申请日：2013-07-08

    Applicant: Tokyo Electron Limited

    Inventor： Hiroaki IKEGAWA ,  Masahiko Kaminishi ,  Jun Ogawa

    IPC: H01L21/76

    CPC classification number: H01L21/76 ,  C23C16/40 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67748 ,  H01L21/68764 ,  H01L21/68771

    Abstract: A film deposition method is provided. A first metal compound film is deposited by performing a first cycle of exposing a substrate to a first source gas containing a first metal, and of exposing the substrate to a reaction gas reactive with the first source gas. Next, the first source gas is adsorbed on the first metal compound film by exposing the substrate having the first metal compound film deposited thereon to the first source gas. Then, a second metal compound film is deposited on the substrate by performing a second cycle of exposing the substrate having the first source gas adsorbed thereon to a second source gas containing a second metal, and of exposing the substrate to the reaction gas reactive with the second source gas.

    Abstract translation: 提供了膜沉积方法。 通过执行将衬底暴露于含有第一金属的第一源气体并将衬底暴露于与第一源气体反应的反应气体的第一循环来沉积第一金属化合物膜。 接下来，通过将其上沉积有第一金属化合物膜的基板暴露于第一源气体，第一源气体被吸附在第一金属化合物膜上。 然后，通过进行将吸附有第一源气体的衬底暴露于含有第二金属的第二源气体的第二循环并将基板暴露于与第二金属化合物反应的反应气体 第二源气。

Patent Agency Ranking