公开(公告)号：US20210088904A1

公开(公告)日：2021-03-25

申请号：US17023470

申请日：2020-09-17

Applicant: Tokyo Electron Limited

Inventor： Anton J. DEVILLIERS ,  Jodi GRZESKOWIAK ,  Daniel FULFORD ,  Richard A. FARRELL ,  Jeffrey SMITH

IPC: G03F7/039 ,  H01L21/027 ,  G03F7/16 ,  G03F7/30 ,  G03F7/20

Abstract: A method of forming a pattern on a substrate is provided. The method includes forming a first layer on an underlying layer of the substrate, where the first layer is patterned to have a first structure. The method also includes depositing a grafting material on side surfaces of the first structure, where the grafting material includes a solubility-shifting material. The method further includes diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, where the solubility-shifting material changes solubility of the neighboring structure in a developer, and removing soluble portions of the neighboring structure using the developer to form a second structure.