公开(公告)号：US20250129475A1

公开(公告)日：2025-04-24

申请号：US18493419

申请日：2023-10-24

Applicant: Tokyo Electron Limited

Inventor： Norman JACOBSON ,  Ronald NASMAN ,  Kandabara TAPILY

IPC: C23C16/455 ,  C23C16/458

Abstract: Aspects of the present disclosure provide an apparatus, which includes first gas channels distributing a first process gas and second gas channels alternating with the first gas channels and distributing a second process gas. The apparatus further includes first feed tubes each including first outlets configured to deliver the first process gas to a row of the first gas channels via the first outlets along different first flow paths of a same first length, and second feed tubes each including second outlets corresponding to a row of the second gas channels and configured to deliver the second process gas to the row of the second gas channels via the second outlets along different second flow paths of a same second length. The apparatus further includes vertical gas conduits each vertically extending from a respective one of the array of gas channels configured to transmit the first or second process gas.

公开(公告)号：US20170011975A1

公开(公告)日：2017-01-12

申请号：US14792509

申请日：2015-07-06

Applicant: Tokyo Electron Limited

Inventor： Mirko VUKOVIC ,  Ronald NASMAN

IPC: H01L21/66 ,  H01L21/285 ,  H01L21/67

CPC classification number: H01L21/67103 ,  H01L21/28556 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248

Abstract: Embodiments include a method for controlled cooling of a heated stage. The method includes setting a stage coupling to a maximum value and heating the stage to a process temperature. The method includes providing a wafer on the heated stage in a process chamber. The method includes performing a process on the wafer and reducing the heating stage coupling to a predetermined minimum value and reducing the heated stage temperature. The method includes removing the wafer from the heated stage and the process chamber. The heated stage is covered with a plurality of pixels, each pixel of the plurality of pixels include a level of emissivity and are equipped with an emissivity control device configured to independently adjust the level of emissivity of the pixel. The heated stage coupling is configured to achieve a predetermined radiative coupling and control the wafer cooling rate and target temperature.

Abstract translation: 实施例包括用于受控阶段的受控冷却的方法。 该方法包括将级耦合设置为最大值并将级加热到过程温度。 该方法包括在处理室中的加热台上提供晶片。 该方法包括在晶片上执行处理并将加热阶段耦合减少到预定的最小值并降低加热阶段温度。 该方法包括从加热台和处理室移除晶片。 加热阶段被多个像素覆盖，多个像素中的每个像素包括发射率水平，并且配备有发射率控制装置，其被配置为独立地调整像素的发射率水平。 加热级耦合器被配置为实现预定的辐射耦合并且控制晶片冷却速率和目标温度。