HEATED STAGE WITH VARIABLE THERMAL EMISSIVITY METHOD AND APPARATUS
    1.
    发明申请
    HEATED STAGE WITH VARIABLE THERMAL EMISSIVITY METHOD AND APPARATUS 审中-公开
    具有可变热敏感方法和装置的加热阶段

    公开(公告)号:US20170011975A1

    公开(公告)日:2017-01-12

    申请号:US14792509

    申请日:2015-07-06

    Abstract: Embodiments include a method for controlled cooling of a heated stage. The method includes setting a stage coupling to a maximum value and heating the stage to a process temperature. The method includes providing a wafer on the heated stage in a process chamber. The method includes performing a process on the wafer and reducing the heating stage coupling to a predetermined minimum value and reducing the heated stage temperature. The method includes removing the wafer from the heated stage and the process chamber. The heated stage is covered with a plurality of pixels, each pixel of the plurality of pixels include a level of emissivity and are equipped with an emissivity control device configured to independently adjust the level of emissivity of the pixel. The heated stage coupling is configured to achieve a predetermined radiative coupling and control the wafer cooling rate and target temperature.

    Abstract translation: 实施例包括用于受控阶段的受控冷却的方法。 该方法包括将级耦合设置为最大值并将级加热到过程温度。 该方法包括在处理室中的加热台上提供晶片。 该方法包括在晶片上执行处理并将加热阶段耦合减少到预定的最小值并降低加热阶段温度。 该方法包括从加热台和处理室移除晶片。 加热阶段被多个像素覆盖,多个像素中的每个像素包括发射率水平,并且配备有发射率控制装置,其被配置为独立地调整像素的发射率水平。 加热级耦合器被配置为实现预定的辐射耦合并且控制晶片冷却速率和目标温度。

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