Abstract:
Embodiments include a method for controlled cooling of a heated stage. The method includes setting a stage coupling to a maximum value and heating the stage to a process temperature. The method includes providing a wafer on the heated stage in a process chamber. The method includes performing a process on the wafer and reducing the heating stage coupling to a predetermined minimum value and reducing the heated stage temperature. The method includes removing the wafer from the heated stage and the process chamber. The heated stage is covered with a plurality of pixels, each pixel of the plurality of pixels include a level of emissivity and are equipped with an emissivity control device configured to independently adjust the level of emissivity of the pixel. The heated stage coupling is configured to achieve a predetermined radiative coupling and control the wafer cooling rate and target temperature.
Abstract:
Light can be used to monitor coating a liquid on a substrate. By directing the light to a spot on the substrate, when the liquid passes through the spot, some light will be reflected, while some light will be scattered. Monitoring this behavior can indicate whether a substrate has been successfully coated with the liquid, as well as identifying defects. Further, coating times can be monitored to make process adjustments.
Abstract:
Light can be used to monitor coating a liquid on a substrate. By directing the light to a spot on the substrate, when the liquid passes through the spot, some light will be reflected, while some light will be scattered. Monitoring this behavior can indicate whether a substrate has been successfully coated with the liquid, as well as identifying defects. Further, coating times can be monitored to make process adjustments.