公开(公告)号：US20210090898A1

公开(公告)日：2021-03-25

申请号：US17019716

申请日：2020-09-14

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Ryo KUWAJIMA ,  Satoshi TODA

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising β-diketone into the processing container.

公开(公告)号：US20220319877A1

公开(公告)日：2022-10-06

申请号：US17656315

申请日：2022-03-24

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Ryo KUWAJIMA ,  Hirofumi YAMAGUCHI

IPC: H01L21/67 ,  H01L21/3065

Abstract: A substrate processing apparatus for processing a substrate includes: a processing container in which the substrate is accommodated; a stage provided in an interior of the processing container and configured to place the substrate thereon; a partition wall provided in the interior of the processing container and surrounding an outer circumference of the stage; an inner gas supplier configured to supply a first gas to an inner side of the partition wall; and an outer gas supplier configured to supply a second gas to an outer side of the partition wall in the interior of the processing container.

公开(公告)号：US20240249956A1

公开(公告)日：2024-07-25

申请号：US18566183

申请日：2022-05-26

Applicant: Tokyo Electron Limited

Inventor： Yohei NAKAGOMI ,  Ryo KUWAJIMA ,  Yohei MIDORIKAWA

IPC: H01L21/67

CPC classification number: H01L21/67017

Abstract: A substrate processing apparatus for processing a substrate, includes: an inner chamber in which the substrate is accommodated; an outer chamber provided outside the inner chamber, and a processing gas supplier configured to supply a processing gas to an interior of the inner chamber, wherein the inner chamber is configured to be detachable from the outer chamber, and the outer chamber is provided such that the outer chamber does not come into contact with the processing gas supplied to the interior of the inner chamber.

公开(公告)号：US20210090912A1

公开(公告)日：2021-03-25

申请号：US17016872

申请日：2020-09-10

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Ryo KUWAJIMA ,  Satoshi TODA

IPC: H01L21/67 ,  H01L21/687

Abstract: An etching apparatus includes: a processing container configured to be evacuated to form a vacuum atmosphere in the processing container and including a wall that has an alloy composed of aluminum and an additive metal as a base material; a stage installed in the processing container and configured to mount a substrate having a metal film formed on a surface of the substrate; a gas supplier installed in the processing container and configured to supply an oxidizing gas that oxidizes the metal film and an etching gas that is β-diketone to the stage to etch the oxidized metal film; and a wall heater configured to heat the wall to a temperature in a range of 60 degrees C. to 90 degrees C. when the etching gas is supplied from the gas supplier into the processing container.