公开(公告)号：US20160005621A1

公开(公告)日：2016-01-07

申请号：US14789674

申请日：2015-07-01

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Kensaku NARUSHIMA ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/31111 ,  H01L21/67069 ,  H01L21/67109

Abstract: A method for etching a silicon oxide film on a target substrate where an etching area is partitioned by pattern layers and stopping the etching before a base layer of the silicon oxide layer is etched is disclosed. The method includes heating the target substrate in a vacuum atmosphere and intermittently supplying, as an etching gas, at least one of a processing gas containing a hydrogen fluoride gas and an ammonia gas in a pre-mixed state and a processing gas containing a compound of nitrogen, hydrogen and fluorine to the target substrate from a gas supply unit multiple times.

Abstract translation: 公开了一种用于蚀刻目标衬底上的氧化硅膜的方法，其中蚀刻区域被图案层划分，并且在蚀刻氧化硅层的基底层之前停止蚀刻。 该方法包括在真空气氛中加热目标基板，并且间歇地将预混合状态的含有氟化氢气体和氨气的处理气体中的至少一种作为蚀刻气体供给，所述处理气体含有 氮气，氢气和氟气从气体供给单元多次送入目标衬底。

公开(公告)号：US20150380268A1

公开(公告)日：2015-12-31

申请号：US14743390

申请日：2015-06-18

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Nobuhiro TAKAHASHI ,  Hiroyuki TAKAHASHI

IPC: H01L21/311 ,  G05B19/18 ,  H01L21/02

CPC classification number: H01L21/31116 ,  G05B19/182 ,  H01L21/6708

Abstract: An etching method includes: disposing a substrate to be processed within a chamber, the substrate to be processed having a silicon oxide film formed on a surface thereof and a silicon nitride film formed adjacent to the silicon oxide film; and selectively etching the silicon oxide film with respect to the silicon nitride film by supplying HF gas or HF gas and F2 gas, an alcohol gas or water vapor, and an inert gas into the chamber.

Abstract translation: 蚀刻方法包括：将待处理的基板设置在室内，待处理的基板具有形成在其表面上的氧化硅膜和与氧化硅膜相邻形成的氮化硅膜; 并通过将HF气体或HF气体以及F2气体，醇气体或水蒸气以及惰性气体供给到腔室中，相对于氮化硅膜选择性地蚀刻氧化硅膜。

公开(公告)号：US20220020601A1

公开(公告)日：2022-01-20

申请号：US17305552

申请日：2021-07-09

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Naoki SHINDO ,  Haruna SUZUKI ,  Gen YOU

IPC: H01L21/3213 ,  H01L21/67 ,  H01L21/768

Abstract: An etching method includes: providing, in a chamber, a substrate including a structure including a first film selected from a molybdenum film and a tungsten film; performing a first etching on the first film by supplying an oxidation gas and a first gas selected from a MoF6 gas and a WF6 gas into the chamber; when a pore present inside the first film is exposed by the first etching, filling the pore with one of molybdenum and tungsten by stopping the first etching and supplying a reduction gas and a second gas selected the MoF6 gas and the WF6 gas into the chamber; and performing a second etching on a filling layer formed in the filling and the first film by supplying the oxidation gas and a third gas selected from the MoF6 gas and the WF6 gas into the chamber.

公开(公告)号：US20170243753A1

公开(公告)日：2017-08-24

申请号：US15441054

申请日：2017-02-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Muneyuki IMAI ,  Satoshi TODA

IPC: H01L21/3105 ,  H01L21/311 ,  H01L21/762

CPC classification number: H01L21/31056 ,  H01J37/321 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/67742 ,  H01L21/68742 ,  H01L21/76205 ,  H01L21/76224

Abstract: There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side. The substrate processing method includes: a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer; and a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas.

公开(公告)号：US20190153599A1

公开(公告)日：2019-05-23

申请号：US16092683

申请日：2017-03-03

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: C23C16/455 ,  H01L21/306 ,  C23C16/52 ,  C23C16/44

Abstract: A predetermined process is performed on two target substrates using a substrate processing device that includes two processing parts for performing a substrate process on each of the two target substrates, a gas supply mechanism for separately supplying gases to the two processing parts, and a common exhaust mechanism for collectively exhausting the gases inside the two processing parts. A first mode is executed in which an HF gas and an NH3 gas are supplied to one of the two processing parts, and the HF gas is not supplied to the other of the two processing parts. Subsequently, a second mode is executed in which the HF gas and the NH3 gas are supplied to the two processing parts under the same gas conditions. In the first mode, a pressure difference is prevented from occurring between the two processing parts.

公开(公告)号：US20160027672A1

公开(公告)日：2016-01-28

申请号：US14809035

申请日：2015-07-24

Applicant: Tokyo Electron Limited

Inventor： Yuji ASAKAWA ,  Yohei MIDORIKAWA ,  Satoshi TODA ,  Hiroyuki TAKAHASHI

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67126 ,  H01L21/31116 ,  H01L21/6719 ,  H01L21/68742 ,  H01L21/68771 ,  H01L21/68785 ,  H01L21/68792

Abstract: A substrate processing apparatus performs a predetermined process on a substrate by using a processing gas under a vacuum atmosphere. The substrate processing apparatus includes a chamber configured to accommodate the substrate and to be kept in the vacuum atmosphere; a substrate mounting table configured to mount the substrate thereon in the chamber; a gas introduction member configured to introduce a gas including the processing gas in the chamber; a partition wall member provided to be movable up and down in the chamber and configured to form a partition wall that defines a processing space in a region including the substrate above the substrate mounting table; and an elevating mechanism configured to move the partition wall member up and down.

Abstract translation: 基板处理装置在真空气氛下使用处理气体在基板上进行规定的处理。 基板处理装置包括：腔室，被配置为容纳基板并保持在真空气氛中; 基板安装台，其构造成将所述基板安装在所述室中; 气体引入构件，被配置为将包括处理气体的气体引入所述腔室; 分隔壁构件，设置成可在所述室中上下移动并且构造成在所述基板安装台上方包括所述基板的区域中形成限定处理空间的分隔壁; 以及升降机构，其构造成使所述隔壁构件上下移动。

公开(公告)号：US20230014819A1

公开(公告)日：2023-01-19

申请号：US17756979

申请日：2020-10-28

Applicant: Tokyo Electron Limited

Inventor： Satoshi TODA ,  Naoki SHINDO ,  Mitsuhiro TACHIBANA ,  Haruna SUZUKI ,  Gen YOU

IPC: H01L21/3213 ,  H01L21/67

Abstract: An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

公开(公告)号：US20210090898A1

公开(公告)日：2021-03-25

申请号：US17019716

申请日：2020-09-14

Applicant: Tokyo Electron Limited

Inventor： Naoki SHINDO ,  Ryo KUWAJIMA ,  Satoshi TODA

IPC: H01L21/3213 ,  H01L21/67

Abstract: There is provided an etching method, including: loading a substrate having a metallic film formed on the substrate into a processing container; and subsequently, oxidizing and etching the metallic film by setting an internal pressure of the processing container to a pressure higher than 2.40×104 Pa and supplying an oxidizing gas for oxidizing the metallic film and an etching gas comprising β-diketone into the processing container.

公开(公告)号：US20160111304A1

公开(公告)日：2016-04-21

申请号：US14886325

申请日：2015-10-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hiroyuki TAKAHASHI ,  Kazunori KAZAMA ,  Noriyuki IWABUCHI ,  Satoshi TODA ,  Tetsuro TAKAHASHI

IPC: H01L21/67 ,  H01L21/3065

Abstract: There is provided a substrate processing apparatus of performing a predetermined substrate process on a plurality of target substrates under a vacuum atmosphere, including: a plurality of processing parts each configured to perform the substrate process on each of the plurality of target substrates; a gas supply mechanism configured to supply a processing gas to each of the plurality of processing parts; a single exhaust mechanism configured to exhaust the processing gas within the plurality of processing parts; and a control part configured to control the single exhaust mechanism to collectively exhaust the processing gas within the plurality of processing parts, and control the gas supply mechanism to separately supply the processing gas into each of the plurality of processing parts such that a difference between internal pressures of the plurality of processing parts is prevented.

Abstract translation: 提供了一种在真空气氛下对多个目标基板执行预定的基板工艺的基板处理装置，包括：多个处理部件，每个处理部件被配置为对多个目标基板中的每一个进行基板处理; 气体供给机构，其构造成将处理气体供给到所述多个处理部中的每一个; 单个排气机构，其构造成排出所述多个处理部件内的处理气体; 以及控制部，被配置为控制所述单个排气机构，以共同排出所述多个处理部内的处理气体，并且控制所述气体供给机构，以将所述处理气体分别供给到所述多个处理部中的每一个，使得内部 防止了多个处理部件的压力。

公开(公告)号：US20160079081A1

公开(公告)日：2016-03-17

申请号：US14851091

申请日：2015-09-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi TODA ,  Kenshirou ASAHI ,  Hiroyuki TAKAHASHI ,  Kimihiko DEMICHI

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/02

CPC classification number: H01L21/31116 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/311 ,  H01L21/32135

Abstract: There is provided an etching method, including: disposing a target substrate within a chamber, the target substrate having a first silicon oxide film formed on a surface of the target substrate and a second silicon oxide film formed adjacent to the first silicon oxide film, the first silicon oxide film being formed by an atomic layer deposition method and the second silicon oxide film being formed by a method other than the atomic layer deposition method; and selectively etching the first silicon oxide film with respect to the second silicon oxide film by supplying one selected from the group consisting of HF gas and alcohol gas; HF gas and water vapor; HF gas, F2 gas, and alcohol gas; HF gas, F2 gas, and water vapor, into the chamber.

Abstract translation: 提供了一种蚀刻方法，包括：将目标衬底设置在腔室内，目标衬底具有形成在目标衬底的表面上的第一氧化硅膜和与第一氧化硅膜相邻形成的第二氧化硅膜， 第一氧化硅膜通过原子层沉积法形成，第二氧化硅膜通过除原子层沉积法之外的方法形成; 并通过供给选自HF气体和醇气体的一种来选择性地蚀刻相对于第二氧化硅膜的第一氧化硅膜; HF气体和水蒸汽; HF气体，F2气体和醇气体; HF气体，F2气体和水蒸气进入腔室。