公开(公告)号：US20160336170A1

公开(公告)日：2016-11-17

申请号：US15149734

申请日：2016-05-09

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida ,  Shogo Fukui ,  Hidetaka Shinohara

IPC: H01L21/02 ,  H01L21/687 ,  B08B5/00 ,  B08B3/08 ,  B08B3/10 ,  H01L21/67 ,  B08B3/02

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

Abstract translation: 公开了一种基板处理装置。 基板处理装置包括：第一喷嘴，其朝向基板的前表面喷射化学液体的液滴;液滴通过混合由气体供给机构供给的气体和被加热的药液供给机构供给的加热的化学液体而形成 以及第二喷嘴，其将由加热的去离子水供给机构供应的经加热的去离子水喷射到基板的后表面。 第一喷嘴通过从第二喷嘴供应的加热的去离子水将液滴从其后表面加热到衬底的前表面。

公开(公告)号：US10553421B2

公开(公告)日：2020-02-04

申请号：US15149734

申请日：2016-05-09

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida ,  Shogo Fukui ,  Hidetaka Shinohara

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/687

Abstract: Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a first nozzle that ejects droplets of a chemical liquid toward a front surface of a substrate, the droplets being formed by mixing a gas supplied by a gas supply mechanism and a heated chemical liquid supplied by a heated chemical liquid supply mechanism with each other, and a second nozzle that ejects the heated deionized water supplied by the heated deionized water supply mechanism toward the rear surface of the substrate. The first nozzle supplies the droplets to the front surface of the substrate heated from the rear surface thereof by the heated deionized water supplied from the second nozzle.

公开(公告)号：US09889476B2

公开(公告)日：2018-02-13

申请号：US15003321

申请日：2016-01-21

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida

IPC: H01L21/02 ,  B08B3/10 ,  H01L21/67 ,  H01L21/687

CPC classification number: B08B3/10 ,  H01L21/02041 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68742

Abstract: A first holding plate and a second holding plate are provided. The first holding plate has a first flat plate portion facing a bottom surface of a substrate and holds the substrate so as to form a gap between the first flat plate portion and the substrate as a first gap, and the second holding plate has a second flat plate portion facing the bottom surface of the substrate and holds the substrate so as to form a gap between the second flat plate portion and the substrate as a second gap. Depending on a processing to be performed, any one of the first holding plate and the second holding plate is mounted on a rotational shaft of a shaft mechanism that includes a fluid supply unit configured to supply a fluid to the bottom surface of the substrate and the rotational shaft configured to rotate the substrate. The processing is performed on the substrate by supplying the fluid to the bottom surface of the substrate from the fluid supply unit.

公开(公告)号：US10290518B2

公开(公告)日：2019-05-14

申请号：US14834482

申请日：2015-08-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kento Kurusu ,  Yukiyoshi Saito ,  Seiki Ishida

IPC: H01L21/67

Abstract: A substrate liquid processing apparatus includes a substrate holding device which holds a substrate in horizontal position and rotate the substrate around vertical axis of the substrate, a liquid discharge device which is positioned underneath central portion of lower surface of the substrate in the horizontal position and discharges processing liquid toward the lower surface of the substrate, and a gas discharge passage structure which has a gas discharge passage formed around the discharge device such that drying gas passes through. The discharge device has a head including a cover which is extending beyond upper end of the passage such that the cover is covering the upper end of the passage, a liquid discharge port which is protruding from the cover toward the substrate in the horizontal position, and a curved portion which is formed between the port and cover such that the curved portion has a surface bending downward.

公开(公告)号：US20160225644A1

公开(公告)日：2016-08-04

申请号：US15003321

申请日：2016-01-21

Applicant: Tokyo Electron Limited

Inventor： Seiki Ishida

IPC: H01L21/67 ,  B08B3/10 ,  H01L21/02 ,  H01L21/673 ,  H01L21/687

CPC classification number: B08B3/10 ,  H01L21/02041 ,  H01L21/67051 ,  H01L21/68728 ,  H01L21/68742

Abstract: A first holding plate and a second holding plate are provided. The first holding plate has a first flat plate portion facing a bottom surface of a substrate and holds the substrate so as to form a gap between the first flat plate portion and the substrate as a first gap, and the second holding plate has a second flat plate portion facing the bottom surface of the substrate and holds the substrate so as to form a gap between the second flat plate portion and the substrate as a second gap. Depending on a processing to be performed, any one of the first holding plate and the second holding plate is mounted on a rotational shaft of a shaft mechanism that includes a fluid supply unit configured to supply a fluid to the bottom surface of the substrate and the rotational shaft configured to rotate the substrate. The processing is performed on the substrate by supplying the fluid to the bottom surface of the substrate from the fluid supply unit.

Abstract translation: 提供第一保持板和第二保持板。 第一保持板具有面对基板的底面的第一平板部，并且保持基板，以在第一平板部和基板之间形成作为第一间隙的间隙，第二保持板具有第二平面 板部分面向基板的底表面并保持基板，以便在第二平板部分和基板之间形成间隙作为第二间隙。 根据要执行的处理，第一保持板和第二保持板中的任何一个安装在轴机构的旋转轴上，该轴机构的旋转轴包括被配置为向基板的底表面供应流体的流体供应单元， 旋转轴构造成旋转基底。 通过从流体供给单元向基板的底面供给流体，在基板上进行处理。